Freescale MMA6280QT User Manual

Freescale Semiconductor
Technical Data
±1.5 g - 6 g Dual Axis Low-g
Document Number: MMA6280QT
Rev 4, 04/2008
Micromachined Accelerometer
The MMA6280QT low cost capacitive micromachined accelerometer features signal conditioning, a 1-pole low pass filter, temperature compensation and g-Select which allows for the selection among 4 sensitivities. Zero-g offset full scale span and filter cut-off are factory set and require no external devices. Includes a Sleep Mode that makes it ideal for handheld battery powered electronics.

Features

Selectable Sensitivity (1.5 g / 2 g / 4 g / 6 g)
Low Current Consumption: 500 μA
Sleep Mode: 3 μA
Low Voltage Operation: 2.2 V – 3.6 V
6 mm x 6 mm x 1.45 mm QFN
High Sensitivity (800 mV/g @1.5 g)
Fast Turn On Time
Integral Signal Conditioning with Low Pass Filter
Robust Design, High Shocks Survivability
Pb-Free Terminations
Environmentally Preferred Package
Low Cost

Typical Applications

Portable Applications: Tilt Monitoring, Anti-Theft
Pedometer: Motion Sensing
PDA: Text Scroll
Gaming: Tilt and Motion Sensing, Event Recorder
Robotics: Motion Sensing
Impact Monitoring (shipping/handling, black box event recorder)
Vibration Monitoring and Recording (appliance balance, seismic, smart
motors, etc.).
ORDERING INFORMATION
Device Name
MMA6280QT
MMA6280QR2
Temperature
Range
– 40 to +105°C 1622-02 QFN-16, Tray – 40 to +105°C 1622-02 QFN-16,Tape & Reel
Package Drawing
Package
MMA6280QT
MMA6280QT: XZ AXIS
ACCELEROMETER
±1.5 g / 2 g / 4 g / 6 g
Bottom View
16-LEAD
QFN
CASE 1622-02
Top View
N/CN/C
1516 14 13
g-Select1
1
2
3
V
DD
V
4
SS
5678
X
OUT
N/C
N/C
N/C
Z
OUT
N/C
Sleep
12
Mode
11
N/Cg-Select2
10
N/C
9
N/C
© Freescale Semiconductor, Inc., 2005-2008. All rights reserved.
Figure 1. Pi n Connections
g-Select1 g-Select2
V
DD
Sleep Mode
G-Cell
Sensor
Oscillator
C to V
Converter
Control Logic
EEPROM Trim Circuits
Clock
Generator
Gain
+
Filter
V
SS
X-Temp
Comp
Z-Temp
Comp
Figure 2. Simplified Accelerometer Functional Block Diagram
Table 1. Maximum Ratings
(Maximum ratings are the limits to which the device can be exposed without causing permanent damage.)
Rating Symbol Value Unit
Maximum Acceleration (all axis) g Supply Voltage V
Drop Test Storage Temperature Range T
1. Dropped onto concrete surface from any axis.
(1)
max
DD
D
drop
stg
±2000 g
–0.3 to +3.6 V
1.8 m
–40 to +125 °C
X
OUT
Z
OUT

ELECTRO STATIC DISCHARGE (ESD)

WARNING: This device is sensitive to electrostatic
discharge.
Although the Freescale accelerometer contains internal 2000 V ESD protection circuitry, extra precaution must be taken by the user to protect the chip from ESD. A charge of over 2000 volts can accumulate on the human body or associated test equipment. A charge of this magnitude can
MMA6280QT
2 Freescale Semiconductor
alter the performance or cause failure of the chip. When handling the accelerometer, proper ESD precautions should be followed to avoid exposing the device to discharges which may be detrimental to its performance.
Sensors
Table 2. Operating Ch aracteristics
Unless otherwise noted: –20°C < TA < 85°C, 2.2 V < VDD < 3.6 V, Acceleration = 0 g, Loaded output
Characteristic Symbol Min Typ Max Unit
Operating Range
Supply Voltage
Supply Current
Supply Current at Sleep Mode
Operating Temperature Range
Acceleration Range, X-Axis, Z-Axis
g-Select1 & 2: 00 g-Select1 & 2: 10 g-Select1 & 2: 01 g-Select1 & 2: 11
(2)
(3)
(4)
V
DD
I
DD
I
DD
T
A
g
FS
g
FS
g
FS
g
FS
2.2 — —
–40
— — — —
3.3
500
3
±1.5 ±2.0 ±4.0 ±6.0
(1)
3.6
800
10
+105
— — — —
V
μA μA
°C
g g g g
Output Signal
Zero-g (T
(4)
Zero-g
= 25°C, VDD = 3.3 V)
A
(5)
X-axis Z-axis
Sensitivity (T
= 25°C, VDD = 3.3 V)
A
1.5 g 2 g 4 g 6 g
Sensitivity
(4)
X-axis Z-axis
Bandwidth Response
X Z
Noise
RMS (0.1 Hz – 1 kHz)
(4)
Power Spectral Density RMS (0.1 Hz – 1 kHz)
Control Timing
Power-Up Response Time Enable Response Time
(8)
(9)
Sensing Element Resonant Frequency
X Z
Internal Sampling Frequency
Output Stage Performance
Full-Scale Output Range (I
Nonlinearity, X
Cross-Axis Sensitivity Ratiometric Error
OUT
(11)
, Z
OUT
(10)
= 30 µA) V
OUT
V
OFF
V
, T
OFF
A
V
, T
OFF
A
S
1.5g
S
2g
S
4g
S
6g
S,T
A
S,T
A
f
-3dB
f
-3dB
n
(4)
RMS
n
PSD
t
RESPONSE
t
ENABLE
f
GCELL
f
GCELL
f
CLK
FSO
NL
OUT
V
XY, XZ, YZ
1.485
(6)
±2.6
(6)
±1.0
740 555
277.5 185
(6)
±0.02
(6)
±0.01
— —
— —
— —
— — —
VSS+0.25 VDD–0.25 V
–1.0 +1.0 %FSO
——5.0 %
1.65
±0.6 ±0.8
800 600 300 200
±0.02 ±0.00
350 150
4.7
350
1.0
0.5
6.0
3.4 11
1.815
±3.8 ±0.8
860 645
322.5 215
±0.02 ±0.01
— —
— —
2.0
2.0
— — —
V
(7) (7)
mg/°C mg/°C
mV/g mV/g mV/g mV/g
(7) (7)
%/°C %/°C
Hz Hz
mVrms
μg/
Hz
ms ms
kHz kHz kHz
error %
1. For a loaded output, the measurements are observed after an RC filter consisting of a 1.0 kΩ resistor and a 0.1 µF capacitor on VDD-GND.
2. These limits define the range of operation for which the part will meet specification.
3. Within the supply range of 2.2 and 3.6 V, the device operates as a fully calibrated linear accelerometer. Beyond these supply limits the device may operate as a linear device but is not guaranteed to be in calibration.
4. This value is measured with g-Select in 1.5 g mode.
5. The device can measure both + and – acceleration. With no input acceleration the output is at midsupply. For positive acceleration the output will increase above V
/2. For negative acceleration, the output will decrease below VDD/2.
DD
6. These values represent the 10th percentile, not the minimum.
7. These values represent the 90th percentile, not the maximum.
8. The response time between 10% of full scale V
input voltage and 90% of the final operating output voltage.
DD
9. The response time between 10% of full scale Sleep Mode input voltage and 90% of the final operating output voltage.
10. A measure of the device’s ability to reject an acceleration applied 90° from the true axis of sensitivity.
11.Zero-g offset ratiometric error can be typically >20% at VDD = 2.2 V. Sensitivity ratiometric error can be typically >3% at VDD = 2.2. Consult factory for additional information
MMA6280QT
Sensors Freescale Semiconductor 3

PRINCIPLE OF OPERATION

The Freescale accelerometer is a s urface-micromachined
integrated-circuit accelerometer.
The device consists of two surface micromachined capacitive sensing cells (g-cell) and a signal conditioning ASIC contained in a single integrated circuit package. The sensing elements are sealed hermetically at the wafer level using a bulk micromachined cap wafer.
The g-cell is a mechanical structure formed from semiconductor materials (polysilicon) using semiconductor processes (masking and etching). It can be modeled as a set of beams attached to a movable central mass that move between fixed beams. The movable beams can be deflected from their rest position by subjecting the system to an acceleration (Figure 3).
As the beams attached to the central mass move, the distance from them to the fixed beams on one side will increase by the same amount that the distance to the fixed beams on the other side decreases. The change in distance is a measure of acceleration.
The g-cell beams form two back-to-back capacitors (Figure 3). As the center beam moves with acceleration, the distance between the beams changes and each capacitor's value will change, (C = Aε/D). Where A is the area of the beam, ε is the dielectric constant, and D is the distance between the beams.
The ASIC uses switched capacitor techniques to measure the g-cell capacitors and extract the acceleration data from the difference between the two capacitors. The ASIC also signal conditions and filters (switched capacitor) the signal, providing a high level output voltage that is ratiometric and proportional to acceleration.
Acceleration

SPECIAL FEATURES

g-Select
The g-Select feature allows for the selection among 4 sensitivities present in the device. Depending on the logic input placed on pins 1 and 2, the device internal gain will be changed allowing it to function with a 1.5 g, 2 g, 4 g, or 6 g sensitivity (Table 3). This feature is ideal when a product has applications requiring different sensitivities for optimum performance. The sensitivity can be changed at anytime during the operation of the product. The g-Select1 and g­Select2 pins can be left unconnected for applications requiring only a 1.5 g sensitivity as the device has an internal pulldown to keep it at that sensitivity (800 mV/g).

Table 3. g-Select Pin Descriptions

g-Select2 g-Select1 g-Range Sensitivity
0 0 1.5 g 800 mV/g 0 1 2 g 600 mV/g 1 0 4 g 300 mV/g 1 1 6 g 200 mV/g
Sleep Mode
The dual axis accelerometer provides a Sleep Mode that is ideal for battery operated products. When Sleep Mode is active, the device outputs are turned off, providing significant reduction of operating current. A low input signal on pin 12 (Sleep Mode) will place the device in this mode and reduce the current to 3μA typ. For lower power consumption, it is recommended to set g-Select1 and g-Select2 to 1.5g mode. By placing a high input signal on pin 12, the device will resume to normal mode of operation.
Filtering
The dual axis accelerometer contains onboard single-pole switched capacitor filters. Because the filter is realized using switched capacitor techniques, there is no requirement for external passive components (resistors and capacitors) to set
Figure 3. Simplified Transducer Physical Model
the cut-off frequency.
Ratiometricity
Ratiometricity simply means the output offset voltage and sensitivity will scale linearly with applied supply voltage. That is, as supply voltage is increased, the sensitivity and offset increase linearly; as supply voltage decreases, offset and sensitivity decrease linearly. This is a key feature when interfacing to a microcontroller or an A/D converter because it provides system level cancellation of supply induced errors in the analog to digital conversion process.
MMA6280QT
Sensors
4 Freescale Semiconductor
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