Designed with efficiency in mind. Compatible with all other
Kinetis L families as well as Kinetis K2x family. General purpose
MCU with USB 2.0, featuring market leading ultra low-power to
provide developers an appropriate entry-level 32-bit solution.
This product offers:
• Run power consumption down to 47 μA/MHz in very low
power run mode
• Static power consumption down to 2 μA with full state
retention and 4 μs wakeup
• Ultra-efficient Cortex-M0+ processor running up to 48 MHz
with industry leading throughput
• Memory option is up to 128 KB flash and 16 KB RAM
• Energy-saving architecture is optimized for low power with
90 nm TFS technology, clock and power gating techniques,
and zero wait state flash memory controller
Performance
• 48 MHz ARM® Cortex®-M0+ core
Memories and memory interfaces
• Up to 128 KB program flash memory
• Up to 16 KB SRAM
System peripherals
• Nine low-power modes to provide power optimization
based on application requirements
• COP Software watchdog
• 4-channel DMA controller, supporting up to 63 request
sources
• Low-leakage wakeup unit
• SWD debug interface and Micro Trace Buffer
• Bit Manipulation Engine
Clocks
• 32 kHz to 40 kHz or 3 MHz to 32 MHz crystal oscillator
• Multi-purpose clock source
• 1 kHz LPO clock
Operating Characteristics
• Voltage range: 1.71 to 3.6 V
Human-machine interface
• Low-power hardware touch sensor interface (TSI)
• Up to 66 general-purpose input/output (GPIO)
Communication interfaces
• USB full-/low-speed On-the-Go controller with onchip transceiver and 5 V to 3.3 V regulator
• Two 8-bit SPI modules
• One low power UART module
• Two UART modules
• Two I2C module
Analog Modules
• 16-bit SAR ADC
• 12-bit DAC
• Analog comparator (CMP) containing a 6-bit DAC
and programmable reference input
1. To find the associated resource, go to http://www.freescale.com and perform a search using this term.
2. To find the associated resource, go to http://www.freescale.com and perform a search using this term with the “x”
replaced by the revision of the device you are using.
Figure 1 shows the functional modules in the chip.
1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for NonhermeticSolid State Surface Mount Devices.
1.3ESD handling ratings
Table 3. ESD handling ratings
SymbolDescriptionMin.Max.UnitNotes
V
HBM
V
CDM
I
LAT
1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing HumanBody Model (HBM).
2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method forElectrostatic-Discharge-Withstand Thresholds of Microelectronic Components.
3. Determined according to JEDEC Standard JESD78, IC Latch-Up Test.
Electrostatic discharge voltage, human body model–2000+2000V1
Electrostatic discharge voltage, charged-device
model
Latch-up current at ambient temperature of 105 °C–100+100mA3
–500+500V2
Kinetis KL25 Sub-Family, Rev5 08/2014.
5
Freescale Semiconductor, Inc.
80%
20%
50%
V
IL
Input Signal
V
IH
Fall Time
High
Low
Rise Time
Midpoint1
The midpoint is VIL + (VIH - VIL) / 2
General
1.4Voltage and current operating ratings
Table 4. Voltage and current operating ratings
SymbolDescriptionMin.Max.Unit
V
I
DD
V
I
V
DDA
V
USB_DP
V
USB_DM
V
REGIN
DD
IO
D
Digital supply voltage–0.33.8V
Digital supply current—120mA
IO pin input voltage–0.3VDD + 0.3V
Instantaneous maximum current single pin limit (applies to
all port pins)
Analog supply voltageVDD – 0.3VDD + 0.3V
USB_DP input voltage–0.33.63V
USB_DM input voltage–0.33.63V
USB regulator input–0.36.0V
–2525mA
2General
2.1AC electrical characteristics
Unless otherwise specified, propagation delays are measured from the 50% to the 50%
point, and rise and fall times are measured at the 20% and 80% points, as shown in the
following figure.
All digital I/O switching characteristics, unless otherwise specified, assume the output
pins have the following characteristics.
6
Freescale Semiconductor, Inc.
Figure 2. Input signal measurement reference
• CL=30 pF loads
• Slew rate disabled
• Normal drive strength
Kinetis KL25 Sub-Family, Rev5 08/2014.
2.2Nonswitching electrical specifications
2.2.1Voltage and current operating requirements
Table 5. Voltage and current operating requirements
SymbolDescriptionMin.Max.UnitNotes
V
DD
V
DDA
VDD – V
VSS – V
V
IH
Supply voltage1.713.6V
Analog supply voltage1.713.6V—
DDAVDD
SSAVSS
-to-V
-to-V
Input high voltage
• 2.7 V ≤ VDD ≤ 3.6 V
• 1.7 V ≤ VDD ≤ 2.7 V
differential voltage–0.10.1V—
DDA
differential voltage–0.10.1V—
SSA
0.7 × V
0.75 × V
DD
DD
—
—
V
V
General
—
V
V
HYS
I
ICIO
I
ICcont
Input low voltage
IL
• 2.7 V ≤ VDD ≤ 3.6 V
• 1.7 V ≤ VDD ≤ 2.7 V
Input hysteresis0.06 × V
IO pin negative DC injection current—single pin
• VIN < VSS–0.3V
Contiguous pin DC injection current —regional limit,
—
—
DD
0.35 × V
0.3 × V
DD
DD
V
V
—V—
–3—mA
—
1
—
includes sum of negative injection currents of 16
contiguous pins
–25—mA
DD
V
DD
V2
V
V
ODPU
RAM
• Negative current injection
Open drain pullup voltage levelV
VDD voltage required to retain RAM1.2—V—
1. All I/O pins are internally clamped to VSS through a ESD protection diode. There is no diode connection to VDD. If V
greater than V
(= VSS-0.3 V) is observed, then there is no need to provide current limiting resistors at the pads. If
IO_MIN
this limit cannot be observed then a current limiting resistor is required. The negative DC injection current limiting
resistor is calculated as R = (V
IO_MIN
- VIN)/|I
ICIO
|.
2. Open drain outputs must be pulled to VDD.
IN
2.2.2LVD and POR operating requirements
Table 6. VDD supply LVD and POR operating requirements
SymbolDescriptionMin.Typ.Max.UnitNotes
V
POR
Kinetis KL25 Sub-Family, Rev5 08/2014.
Falling VDD POR detect voltage0.81.11.5V—
Table continues on the next page...
Freescale Semiconductor, Inc.
7
General
Table 6. VDD supply LVD and POR operating requirements (continued)
SymbolDescriptionMin.Typ.Max.UnitNotes
V
V
LVW1H
V
LVW2H
V
LVW3H
V
LVW4H
V
V
V
LVW1L
V
LVW2L
V
LVW3L
V
LVW4L
V
V
t
LVDH
HYSH
LVDL
HYSL
LPO
Falling low-voltage detect threshold — high
2.482.562.64V—
range (LVDV = 01)
Low-voltage warning thresholds — high range
• Level 1 falling (LVWV = 00)
• Level 2 falling (LVWV = 01)
• Level 3 falling (LVWV = 10)
• Level 4 falling (LVWV = 11)
Low-voltage inhibit reset/recover hysteresis —
2.62
2.72
2.82
2.92
2.70
2.80
2.90
3.00
2.78
2.88
2.98
3.08
—±60—mV—
high range
Falling low-voltage detect threshold — low
1.541.601.66V—
range (LVDV=00)
Low-voltage warning thresholds — low range
• Level 1 falling (LVWV = 00)
• Level 2 falling (LVWV = 01)
• Level 3 falling (LVWV = 10)
• Level 4 falling (LVWV = 11)
Low-voltage inhibit reset/recover hysteresis —
1.74
1.84
1.94
2.04
1.80
1.90
2.00
2.10
1.86
1.96
2.06
2.16
—±40—mV—
low range
Bandgap voltage reference0.971.001.03V—
BG
Internal low power oscillator period — factory
90010001100μs—
trimmed
V
V
V
V
V
V
V
V
1
1
1. Rising thresholds are falling threshold + hysteresis voltage
2.2.3Voltage and current operating behaviors
Table 7. Voltage and current operating behaviors
SymbolDescriptionMin.Max.UnitNotes
V
OH
V
OH
I
OHT
8
Freescale Semiconductor, Inc.
Output high voltage — Normal drive pad (except
RESET)
• 2.7 V ≤ VDD ≤ 3.6 V, IOH = –5 mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = –1.5 mA
Output high voltage — High drive pad (except
VDD – 0.5
VDD – 0.5
—
—
V
V
RESET)
• 2.7 V ≤ VDD ≤ 3.6 V, IOH = –18 mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = –6 mA
VDD – 0.5
VDD – 0.5
—
—
V
V
Output high current total for all ports—100mA—
Table continues on the next page...
Kinetis KL25 Sub-Family, Rev5 08/2014.
1, 2
1, 2
General
Table 7. Voltage and current operating behaviors (continued)
SymbolDescriptionMin.Max.UnitNotes
V
V
I
OLT
I
R
R
I
I
I
OL
OL
IN
IN
IN
OZ
PU
PD
Output low voltage — Normal drive pad
• 2.7 V ≤ VDD ≤ 3.6 V, IOL = 5 mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOL = 1.5 mA
Output low voltage — High drive pad
• 2.7 V ≤ VDD ≤ 3.6 V, IOL = 18 mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOL = 6 mA
Output low current total for all ports—100mA—
Input leakage current (per pin) for full temperature
range
Input leakage current (per pin) at 25 °C—0.025μA3
Input leakage current (total all pins) for full
temperature range
Hi-Z (off-state) leakage current (per pin)—1μA—
Internal pullup resistors2050kΩ4
Internal pulldown resistors2050kΩ5
—
—
—
—
—1μA3
—65μA3
0.5
0.5
0.5
0.5
V
V
V
V
1
1
1. PTB0, PTB1, PTD6, and PTD7 I/O have both high drive and normal drive capability selected by the associated
PTx_PCRn[DSE] control bit. All other GPIOs are normal drive only.
2. The reset pin only contains an active pull down device when configured as the RESET signal or as a GPIO. When
configured as a GPIO output, it acts as a pseudo open drain output.
3. Measured at VDD = 3.6 V
4. Measured at VDD supply voltage = VDD min and Vinput = V
5. Measured at VDD supply voltage = VDD min and Vinput = VDD
SS
2.2.4Power mode transition operating behaviors
All specifications except t
table assume this clock configuration:
• CPU and system clocks = 48 MHz
• Bus and flash clock = 24 MHz
• FEI clock mode
POR and VLLSx→RUN recovery use FEI clock mode at the default CPU and system
frequency of 21 MHz, and a bus and flash clock frequency of 10.5 MHz.
Table 8. Power mode transition operating behaviors
and VLLSx→RUN recovery times in the following
POR
SymbolDescriptionMin.Typ.Max.Unit
t
POR
Kinetis KL25 Sub-Family, Rev5 08/2014.
After a POR event, amount of time from the
point VDD reaches 1.8 V to execution of the first
Table continues on the next page...
——300μs1
Freescale Semiconductor, Inc.
9
General
Table 8. Power mode transition operating behaviors (continued)
SymbolDescriptionMin.Typ.Max.Unit
instruction across the operating temperature
range of the chip.
• VLLS0 → RUN
• VLLS1 → RUN
• VLLS3 → RUN
• LLS → RUN
• VLPS → RUN
• STOP → RUN
—
—
—
—
—
—
95
93
42
4
4
4
115
115
53
4.6
4.4
4.4
μs
μs
μs
μs
μs
μs
1. Normal boot (FTFA_FOPT[LPBOOT]=11).
2.2.5Power consumption operating behaviors
The maximum values stated in the following table represent characterized results
equivalent to the mean plus three times the standard deviation (mean + 3 sigma).
Table 9. Power consumption operating behaviors
SymbolDescriptionTemp.Typ.MaxUnitNote
I
DDA
I
DD_RUNCO_ CM
I
DD_RUNCO
I
DD_RUN
Analog supply current——See notemA1
Run mode current in compute operation
- 48 MHz core / 24 MHz flash/ bus
disabled, LPTMR running using 4 MHz
internal reference clock, CoreMark®
benchmark code executing from flash,
at 3.0 V
Run mode current in compute operation
- 48 MHz core / 24 MHz flash / bus
clock disabled, code of while(1) loop
executing from flash, at 3.0 V
Run mode current - 48 MHz core / 24
MHz bus and flash, all peripheral clocks
disabled, code executing from flash, at
3.0 V
—6.4—mA2
—3.94.8mA3
—55.9mA3
10
Freescale Semiconductor, Inc.
Table continues on the next page...
Kinetis KL25 Sub-Family, Rev5 08/2014.
Table 9. Power consumption operating behaviors (continued)
SymbolDescriptionTemp.Typ.MaxUnitNote
I
DD_RUN
I
DD_WAIT
I
DD_WAIT
I
DD_PSTOP2
I
DD_VLPRCO _CM
I
DD_VLPRCO
I
DD_VLPR
I
DD_VLPR
I
DD_VLPW
I
DD_STOP
I
DD_VLPS
Run mode current - 48 MHz core / 24
MHz bus and flash, all peripheral clocks
enabled, code executing from flash, at
at 25 °C6.26.5mA3, 4
at 125 °C6.87.1mA
3.0 V
Wait mode current - core disabled / 48
—3.13.8mA3
MHz system / 24 MHz bus / flash
disabled (flash doze enabled), all
peripheral clocks disabled, at 3.0 V
Wait mode current - core disabled / 24
—2.43.2mA3
MHz system / 24 MHz bus / flash
disabled (flash doze enabled), all
peripheral clocks disabled • at 3.0 V
Stop mode current with partial stop 2
—1.62mA3
clocking option - core and system
disabled / 10.5 MHz bus, at 3.0 V
Very-low-power run mode current in
—777—µA5
compute operation - 4 MHz core / 0.8
MHz flash / bus clock disabled, LPTMR
running with 4 MHz internal reference
clock, CoreMark benchmark code
executing from flash, at 3.0 V
Very low power run mode current in
—171420µA6
compute operation - 4 MHz core / 0.8
MHz flash / bus clock disabled, code
executing from flash, at 3.0 V
Very low power run mode current - 4
—204449µA6
MHz core / 0.8 MHz bus and flash, all
peripheral clocks disabled, code
executing from flash, at 3.0 V
Very low power run mode current - 4
—262509µA4, 6
MHz core / 0.8 MHz bus and flash, all
peripheral clocks enabled, code
executing from flash, at 3.0 V
Very low power wait mode current -
—123366µA6
core disabled / 4 MHz system / 0.8
MHz bus / flash disabled (flash doze
enabled), all peripheral clocks disabled,
at 3.0 V
Stop mode current at 3.0 Vat 25 °C319343µA—
at 50 °C333365µA
at 70 °C353400µA
at 85 °C380450µA
at 105 °C444572µA
Very-low-power stop mode current at
3.0 V
at 25 °C3.758.46µA—
at 50 °C6.6613.41µA
at 70 °C12.925.71µA
General
Kinetis KL25 Sub-Family, Rev5 08/2014.
Table continues on the next page...
11
Freescale Semiconductor, Inc.
General
Table 9. Power consumption operating behaviors (continued)
SymbolDescriptionTemp.Typ.MaxUnitNote
at 85 °C22.744.06µA
at 105 °C48.490.1µA
I
DD_LLS
I
DD_VLLS3
I
DD_VLLS1
I
DD_VLLS0
I
DD_VLLS0
Low leakage stop mode current at 3.0
V
Very low-leakage stop mode 3 current
at 3.0 V
Very low-leakage stop mode 1 current
at 3.0 V
Very low-leakage stop mode 0 current
(SMC_STOPCTRL[PORPO] = 0) at 3.0
V
Very low-leakage stop mode 0 current
(SMC_STOPCTRL[PORPO] = 1) at 3.0
V
at 25 °C1.682.09µA—
at 50 °C3.054.04µA
at 70 °C5.717.75µA
at 85 °C1013.54µA
at 105 °C22.430.41µA
at 25 °C1.221.6µA—
at 50 °C2.252.31µA
at 70 °C4.215.44µA
at 85 °C7.379.44µA
at 105 °C16.621.76µA
at 25 °C0.580.94µA—
at 50 °C1.261.31µA
at 70 °C2.533.33µA
at 85 °C4.746.1µA
at 105 °C11.415.27µA
at 25 °C0.310.65µA—
at 50 °C0.991.43µA
at 70 °C2.253.01µA
at 85 °C4.465.83µA
at 105 °C11.1314.99µA
at 25 °C0.120.47µA7
at 50 °C0.81.24µA
at 70 °C2.062.81µA
at 85 °C4.275.62µA
at 105 °C10.9314.78µA
1. The analog supply current is the sum of the active or disabled current for each of the analog modules on the device. See
each module's specification for its supply current.
2. MCG configured for PEE mode. CoreMark benchmark compiled using Keil 4.54 with optimization level 3, optimized for
time.
3. MCG configured for FEI mode.
4. Incremental current consumption from peripheral activity is not included.
5. MCG configured for BLPI mode. CoreMark benchmark compiled using IAR 6.40 with optimization level high, optimized
for balanced.
6. MCG configured for BLPI mode.
7. No brownout.
12
Kinetis KL25 Sub-Family, Rev5 08/2014.
Freescale Semiconductor, Inc.
Table 10. Low power mode peripheral adders — typical value
SymbolDescriptionTemperature (°C)Unit
-4025507085105
I
IREFSTEN4MHz
I
IREFSTEN32KHz
I
EREFSTEN4MHz
I
EREFSTEN32KHz
I
CMP
I
RTC
I
UART
I
TPM
4 MHz internal reference clock (IRC) adder.
Measured by entering STOP or VLPS mode
with 4 MHz IRC enabled.
32 kHz internal reference clock (IRC) adder.
Measured by entering STOP mode with the
32 kHz IRC enabled.
External 4 MHz crystal clock adder.
Measured by entering STOP or VLPS mode
with the crystal enabled.
External 32 kHz crystal clock
adder by means of the
OSC0_CR[EREFSTEN and
EREFSTEN] bits. Measured
by entering all modes with
the crystal enabled.
VLLS1440490540560570580nA
VLLS3440490540560570580
LLS490490540560570680
VLPS510560560560610680
STOP510560560560610680
CMP peripheral adder measured by placing
the device in VLLS1 mode with CMP
enabled using the 6-bit DAC and a single
external input for compare. Includes 6-bit
DAC power consumption.
RTC peripheral adder measured by placing
the device in VLLS1 mode with external 32
kHz crystal enabled by means of the
RTC_CR[OSCE] bit and the RTC ALARM
set for 1 minute. Includes ERCLK32K (32
kHz external crystal) power consumption.
UART peripheral adder
measured by placing the
device in STOP or VLPS
mode with selected clock
source waiting for RX data at
115200 baud rate. Includes
selected clock source power
consumption.
MCGIRCLK
(4 MHz
internal
reference
clock)
OSCERCLK
(4 MHz
external
crystal)
TPM peripheral adder
measured by placing the
device in STOP or VLPS
mode with selected clock
source configured for output
compare generating 100 Hz
clock signal. No load is
placed on the I/O generating
the clock signal. Includes
selected clock source and
MCGIRCLK
(4 MHz
internal
reference
clock)
OSCERCLK
(4 MHz
external
crystal)
I/O switching currents.
565656565656µA
525252525252µA
206228237245251258µA
222222222222µA
432357388475532810nA
666666666666µA
214237246254260268
868686868686µA
235256265274280287
General
Kinetis KL25 Sub-Family, Rev5 08/2014.
Table continues on the next page...
13
Freescale Semiconductor, Inc.
General
Table 10. Low power mode peripheral adders — typical value (continued)
SymbolDescriptionTemperature (°C)Unit
-4025507085105
I
I
ADC
BG
Bandgap adder when BGEN bit is set and
device is placed in VLPx, LLS, or VLLSx
mode.
ADC peripheral adder combining the
measured values at VDD and V
placing the device in STOP or VLPS mode.
ADC is configured for low power mode using
the internal clock and continuous
conversions.
The following data was measured under these conditions:
• MCG in FBE for run mode, and BLPE for VLPR mode
• USB regulator disabled
• No GPIOs toggled
• Code execution from flash with cache enabled
• For the ALLOFF curve, all peripheral clocks are disabled except FTFA
14
Freescale Semiconductor, Inc.
Kinetis KL25 Sub-Family, Rev5 08/2014.
All Off
Temperature = 25, V = 3, CACHE = Enable, Code Residence = Flash, Clocking Mode = FBE
DD
All Peripheral CLK Gates
All On
CLK Ratio
Flash-Core
Core Freq (MHz)
Current Consumption on V
DD(A)
Run Mode Current Vs Core Frequency
8.00E-03
7.00E-03
6.00E-03
5.00E-03
4.00E-03
3.00E-03
2.00E-03
1.00E-03
000.00E+00
'1-1
12
3
4
6
1224
48
'1-1'1-1'1-1'1-1'1-1'1-1'1-2
General
Figure 3. Run mode supply current vs. core frequency
Kinetis KL25 Sub-Family, Rev5 08/2014.
15
Freescale Semiconductor, Inc.
VLPR Mode Current Vs Core Frequency
Temperature = 25, V = 3, CACHE = Enable, Code Residence = Flash, Clocking Mode = BLPE
DD
All Peripheral CLK Gates
'1-1'1-2'1-2'1-
4
All Off
All On
CLK Ratio
Flash-Core
Core Freq (MHz)
Current Consumption on VDD (A)
400.00E-06
350.00E-06
300.00E-06
250.00E-06
200.00E-06
150.00E-06
100.00E-06
50.00E-06
000.00E+00
12
4
General
Figure 4. VLPR mode current vs. core frequency
2.2.6
EMC radiated emissions operating behaviors
Table 11. EMC radiated emissions operating behaviors for 64-pin LQFP
package
SymbolDescriptionFrequency
band
(MHz)
V
V
V
V
V
RE_IEC
RE1
RE2
RE3
RE4
Radiated emissions voltage, band 10.15–5013dBμV1, 2
Radiated emissions voltage, band 250–15015dBμV
Radiated emissions voltage, band 3150–50012dBμV
Radiated emissions voltage, band 4500–10007dBμV
IEC level0.15–1000M—2, 3
1. Determined according to IEC Standard 61967-1, Integrated Circuits - Measurement of Electromagnetic Emissions, 150
kHz to 1 GHz Part 1: General Conditions and Definitions and IEC Standard 61967-2, Integrated Circuits - Measurement
of Electromagnetic Emissions, 150 kHz to 1 GHz Part 2: Measurement of Radiated Emissions—TEM Cell and
16
Freescale Semiconductor, Inc.
Typ.UnitNotes
Kinetis KL25 Sub-Family, Rev5 08/2014.
General
Wideband TEM Cell Method. Measurements were made while the microcontroller was running basic application code.
The reported emission level is the value of the maximum measured emission, rounded up to the next whole number,
from among the measured orientations in each frequency range.
2. VDD = 3.3 V, TA = 25 °C, f
3. Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and
Wideband TEM Cell Method
= 8 MHz (crystal), f
OSC
= 48 MHz, f
SYS
= 48 MHz
BUS
2.2.7Designing with radiated emissions in mind
To find application notes that provide guidance on designing your system to minimize
interference from radiated emissions:
1. Go to www.freescale.com.
2. Perform a keyword search for “EMC design.”
2.2.8Capacitance attributes
Table 12. Capacitance attributes
SymbolDescriptionMin.Max.Unit
C
IN
Input capacitance—7pF
2.3Switching specifications
2.3.1Device clock specifications
Table 13. Device clock specifications
SymbolDescriptionMin.Max.Unit
Normal run mode
f
SYS
f
BUS
f
FLASH
f
SYS_USB
f
LPTMR
f
SYS
f
BUS
f
FLASH
f
LPTMR
System and core clock—48MHz
Bus clock—24MHz
Flash clock—24MHz
System and core clock when Full Speed USB in operation20—MHz
LPTMR clock—24MHz
VLPR and VLPS modes
System and core clock—4MHz
Bus clock—1MHz
Flash clock—1MHz
LPTMR clock
2
Table continues on the next page...
1
—24MHz
Kinetis KL25 Sub-Family, Rev5 08/2014.
17
Freescale Semiconductor, Inc.
General
Table 13. Device clock specifications (continued)
SymbolDescriptionMin.Max.Unit
f
ERCLK
f
LPTMR_ERCLK
f
osc_hi_2
f
TPM
f
UART0
1. The frequency limitations in VLPR and VLPS modes here override any frequency specification listed in the timing
specification for any other module. These same frequency limits apply to VLPS, whether VLPS was entered from RUN
or from VLPR.
2. The LPTMR can be clocked at this speed in VLPR or VLPS only when the source is an external pin.
External reference clock—16MHz
LPTMR external reference clock—16MHz
Oscillator crystal or resonator frequency — high frequency