Designed with efficiency in mind. Compatible with all other
Kinetis L families as well as Kinetis K2x family. General purpose
MCU with USB 2.0, featuring market leading ultra low-power to
provide developers an appropriate entry-level 32-bit solution.
This product offers:
• Run power consumption down to 47 μA/MHz in very low
power run mode
• Static power consumption down to 2 μA with full state
retention and 4 μs wakeup
• Ultra-efficient Cortex-M0+ processor running up to 48 MHz
with industry leading throughput
• Memory option is up to 128 KB flash and 16 KB RAM
• Energy-saving architecture is optimized for low power with
90 nm TFS technology, clock and power gating techniques,
and zero wait state flash memory controller
Performance
• 48 MHz ARM® Cortex®-M0+ core
Memories and memory interfaces
• Up to 128 KB program flash memory
• Up to 16 KB SRAM
System peripherals
• Nine low-power modes to provide power optimization
based on application requirements
• COP Software watchdog
• 4-channel DMA controller, supporting up to 63 request
sources
• Low-leakage wakeup unit
• SWD debug interface and Micro Trace Buffer
• Bit Manipulation Engine
Clocks
• 32 kHz to 40 kHz or 3 MHz to 32 MHz crystal oscillator
• Multi-purpose clock source
• 1 kHz LPO clock
Operating Characteristics
• Voltage range: 1.71 to 3.6 V
Human-machine interface
• Low-power hardware touch sensor interface (TSI)
• Up to 66 general-purpose input/output (GPIO)
Communication interfaces
• USB full-/low-speed On-the-Go controller with onchip transceiver and 5 V to 3.3 V regulator
• Two 8-bit SPI modules
• One low power UART module
• Two UART modules
• Two I2C module
Analog Modules
• 16-bit SAR ADC
• 12-bit DAC
• Analog comparator (CMP) containing a 6-bit DAC
and programmable reference input
1. To find the associated resource, go to http://www.freescale.com and perform a search using this term.
2. To find the associated resource, go to http://www.freescale.com and perform a search using this term with the “x”
replaced by the revision of the device you are using.
Figure 1 shows the functional modules in the chip.
1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for NonhermeticSolid State Surface Mount Devices.
1.3ESD handling ratings
Table 3. ESD handling ratings
SymbolDescriptionMin.Max.UnitNotes
V
HBM
V
CDM
I
LAT
1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing HumanBody Model (HBM).
2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method forElectrostatic-Discharge-Withstand Thresholds of Microelectronic Components.
3. Determined according to JEDEC Standard JESD78, IC Latch-Up Test.
Electrostatic discharge voltage, human body model–2000+2000V1
Electrostatic discharge voltage, charged-device
model
Latch-up current at ambient temperature of 105 °C–100+100mA3
–500+500V2
Kinetis KL25 Sub-Family, Rev5 08/2014.
5
Freescale Semiconductor, Inc.
Page 6
80%
20%
50%
V
IL
Input Signal
V
IH
Fall Time
High
Low
Rise Time
Midpoint1
The midpoint is VIL + (VIH - VIL) / 2
General
1.4Voltage and current operating ratings
Table 4. Voltage and current operating ratings
SymbolDescriptionMin.Max.Unit
V
I
DD
V
I
V
DDA
V
USB_DP
V
USB_DM
V
REGIN
DD
IO
D
Digital supply voltage–0.33.8V
Digital supply current—120mA
IO pin input voltage–0.3VDD + 0.3V
Instantaneous maximum current single pin limit (applies to
all port pins)
Analog supply voltageVDD – 0.3VDD + 0.3V
USB_DP input voltage–0.33.63V
USB_DM input voltage–0.33.63V
USB regulator input–0.36.0V
–2525mA
2General
2.1AC electrical characteristics
Unless otherwise specified, propagation delays are measured from the 50% to the 50%
point, and rise and fall times are measured at the 20% and 80% points, as shown in the
following figure.
All digital I/O switching characteristics, unless otherwise specified, assume the output
pins have the following characteristics.
6
Freescale Semiconductor, Inc.
Figure 2. Input signal measurement reference
• CL=30 pF loads
• Slew rate disabled
• Normal drive strength
Kinetis KL25 Sub-Family, Rev5 08/2014.
Page 7
2.2Nonswitching electrical specifications
2.2.1Voltage and current operating requirements
Table 5. Voltage and current operating requirements
SymbolDescriptionMin.Max.UnitNotes
V
DD
V
DDA
VDD – V
VSS – V
V
IH
Supply voltage1.713.6V
Analog supply voltage1.713.6V—
DDAVDD
SSAVSS
-to-V
-to-V
Input high voltage
• 2.7 V ≤ VDD ≤ 3.6 V
• 1.7 V ≤ VDD ≤ 2.7 V
differential voltage–0.10.1V—
DDA
differential voltage–0.10.1V—
SSA
0.7 × V
0.75 × V
DD
DD
—
—
V
V
General
—
V
V
HYS
I
ICIO
I
ICcont
Input low voltage
IL
• 2.7 V ≤ VDD ≤ 3.6 V
• 1.7 V ≤ VDD ≤ 2.7 V
Input hysteresis0.06 × V
IO pin negative DC injection current—single pin
• VIN < VSS–0.3V
Contiguous pin DC injection current —regional limit,
—
—
DD
0.35 × V
0.3 × V
DD
DD
V
V
—V—
–3—mA
—
1
—
includes sum of negative injection currents of 16
contiguous pins
–25—mA
DD
V
DD
V2
V
V
ODPU
RAM
• Negative current injection
Open drain pullup voltage levelV
VDD voltage required to retain RAM1.2—V—
1. All I/O pins are internally clamped to VSS through a ESD protection diode. There is no diode connection to VDD. If V
greater than V
(= VSS-0.3 V) is observed, then there is no need to provide current limiting resistors at the pads. If
IO_MIN
this limit cannot be observed then a current limiting resistor is required. The negative DC injection current limiting
resistor is calculated as R = (V
IO_MIN
- VIN)/|I
ICIO
|.
2. Open drain outputs must be pulled to VDD.
IN
2.2.2LVD and POR operating requirements
Table 6. VDD supply LVD and POR operating requirements
SymbolDescriptionMin.Typ.Max.UnitNotes
V
POR
Kinetis KL25 Sub-Family, Rev5 08/2014.
Falling VDD POR detect voltage0.81.11.5V—
Table continues on the next page...
Freescale Semiconductor, Inc.
7
Page 8
General
Table 6. VDD supply LVD and POR operating requirements (continued)
SymbolDescriptionMin.Typ.Max.UnitNotes
V
V
LVW1H
V
LVW2H
V
LVW3H
V
LVW4H
V
V
V
LVW1L
V
LVW2L
V
LVW3L
V
LVW4L
V
V
t
LVDH
HYSH
LVDL
HYSL
LPO
Falling low-voltage detect threshold — high
2.482.562.64V—
range (LVDV = 01)
Low-voltage warning thresholds — high range
• Level 1 falling (LVWV = 00)
• Level 2 falling (LVWV = 01)
• Level 3 falling (LVWV = 10)
• Level 4 falling (LVWV = 11)
Low-voltage inhibit reset/recover hysteresis —
2.62
2.72
2.82
2.92
2.70
2.80
2.90
3.00
2.78
2.88
2.98
3.08
—±60—mV—
high range
Falling low-voltage detect threshold — low
1.541.601.66V—
range (LVDV=00)
Low-voltage warning thresholds — low range
• Level 1 falling (LVWV = 00)
• Level 2 falling (LVWV = 01)
• Level 3 falling (LVWV = 10)
• Level 4 falling (LVWV = 11)
Low-voltage inhibit reset/recover hysteresis —
1.74
1.84
1.94
2.04
1.80
1.90
2.00
2.10
1.86
1.96
2.06
2.16
—±40—mV—
low range
Bandgap voltage reference0.971.001.03V—
BG
Internal low power oscillator period — factory
90010001100μs—
trimmed
V
V
V
V
V
V
V
V
1
1
1. Rising thresholds are falling threshold + hysteresis voltage
2.2.3Voltage and current operating behaviors
Table 7. Voltage and current operating behaviors
SymbolDescriptionMin.Max.UnitNotes
V
OH
V
OH
I
OHT
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Freescale Semiconductor, Inc.
Output high voltage — Normal drive pad (except
RESET)
• 2.7 V ≤ VDD ≤ 3.6 V, IOH = –5 mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = –1.5 mA
Output high voltage — High drive pad (except
VDD – 0.5
VDD – 0.5
—
—
V
V
RESET)
• 2.7 V ≤ VDD ≤ 3.6 V, IOH = –18 mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = –6 mA
VDD – 0.5
VDD – 0.5
—
—
V
V
Output high current total for all ports—100mA—
Table continues on the next page...
Kinetis KL25 Sub-Family, Rev5 08/2014.
1, 2
1, 2
Page 9
General
Table 7. Voltage and current operating behaviors (continued)
SymbolDescriptionMin.Max.UnitNotes
V
V
I
OLT
I
R
R
I
I
I
OL
OL
IN
IN
IN
OZ
PU
PD
Output low voltage — Normal drive pad
• 2.7 V ≤ VDD ≤ 3.6 V, IOL = 5 mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOL = 1.5 mA
Output low voltage — High drive pad
• 2.7 V ≤ VDD ≤ 3.6 V, IOL = 18 mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOL = 6 mA
Output low current total for all ports—100mA—
Input leakage current (per pin) for full temperature
range
Input leakage current (per pin) at 25 °C—0.025μA3
Input leakage current (total all pins) for full
temperature range
Hi-Z (off-state) leakage current (per pin)—1μA—
Internal pullup resistors2050kΩ4
Internal pulldown resistors2050kΩ5
—
—
—
—
—1μA3
—65μA3
0.5
0.5
0.5
0.5
V
V
V
V
1
1
1. PTB0, PTB1, PTD6, and PTD7 I/O have both high drive and normal drive capability selected by the associated
PTx_PCRn[DSE] control bit. All other GPIOs are normal drive only.
2. The reset pin only contains an active pull down device when configured as the RESET signal or as a GPIO. When
configured as a GPIO output, it acts as a pseudo open drain output.
3. Measured at VDD = 3.6 V
4. Measured at VDD supply voltage = VDD min and Vinput = V
5. Measured at VDD supply voltage = VDD min and Vinput = VDD
SS
2.2.4Power mode transition operating behaviors
All specifications except t
table assume this clock configuration:
• CPU and system clocks = 48 MHz
• Bus and flash clock = 24 MHz
• FEI clock mode
POR and VLLSx→RUN recovery use FEI clock mode at the default CPU and system
frequency of 21 MHz, and a bus and flash clock frequency of 10.5 MHz.
Table 8. Power mode transition operating behaviors
and VLLSx→RUN recovery times in the following
POR
SymbolDescriptionMin.Typ.Max.Unit
t
POR
Kinetis KL25 Sub-Family, Rev5 08/2014.
After a POR event, amount of time from the
point VDD reaches 1.8 V to execution of the first
Table continues on the next page...
——300μs1
Freescale Semiconductor, Inc.
9
Page 10
General
Table 8. Power mode transition operating behaviors (continued)
SymbolDescriptionMin.Typ.Max.Unit
instruction across the operating temperature
range of the chip.
• VLLS0 → RUN
• VLLS1 → RUN
• VLLS3 → RUN
• LLS → RUN
• VLPS → RUN
• STOP → RUN
—
—
—
—
—
—
95
93
42
4
4
4
115
115
53
4.6
4.4
4.4
μs
μs
μs
μs
μs
μs
1. Normal boot (FTFA_FOPT[LPBOOT]=11).
2.2.5Power consumption operating behaviors
The maximum values stated in the following table represent characterized results
equivalent to the mean plus three times the standard deviation (mean + 3 sigma).
Table 9. Power consumption operating behaviors
SymbolDescriptionTemp.Typ.MaxUnitNote
I
DDA
I
DD_RUNCO_ CM
I
DD_RUNCO
I
DD_RUN
Analog supply current——See notemA1
Run mode current in compute operation
- 48 MHz core / 24 MHz flash/ bus
disabled, LPTMR running using 4 MHz
internal reference clock, CoreMark®
benchmark code executing from flash,
at 3.0 V
Run mode current in compute operation
- 48 MHz core / 24 MHz flash / bus
clock disabled, code of while(1) loop
executing from flash, at 3.0 V
Run mode current - 48 MHz core / 24
MHz bus and flash, all peripheral clocks
disabled, code executing from flash, at
3.0 V
—6.4—mA2
—3.94.8mA3
—55.9mA3
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Freescale Semiconductor, Inc.
Table continues on the next page...
Kinetis KL25 Sub-Family, Rev5 08/2014.
Page 11
Table 9. Power consumption operating behaviors (continued)
SymbolDescriptionTemp.Typ.MaxUnitNote
I
DD_RUN
I
DD_WAIT
I
DD_WAIT
I
DD_PSTOP2
I
DD_VLPRCO _CM
I
DD_VLPRCO
I
DD_VLPR
I
DD_VLPR
I
DD_VLPW
I
DD_STOP
I
DD_VLPS
Run mode current - 48 MHz core / 24
MHz bus and flash, all peripheral clocks
enabled, code executing from flash, at
at 25 °C6.26.5mA3, 4
at 125 °C6.87.1mA
3.0 V
Wait mode current - core disabled / 48
—3.13.8mA3
MHz system / 24 MHz bus / flash
disabled (flash doze enabled), all
peripheral clocks disabled, at 3.0 V
Wait mode current - core disabled / 24
—2.43.2mA3
MHz system / 24 MHz bus / flash
disabled (flash doze enabled), all
peripheral clocks disabled • at 3.0 V
Stop mode current with partial stop 2
—1.62mA3
clocking option - core and system
disabled / 10.5 MHz bus, at 3.0 V
Very-low-power run mode current in
—777—µA5
compute operation - 4 MHz core / 0.8
MHz flash / bus clock disabled, LPTMR
running with 4 MHz internal reference
clock, CoreMark benchmark code
executing from flash, at 3.0 V
Very low power run mode current in
—171420µA6
compute operation - 4 MHz core / 0.8
MHz flash / bus clock disabled, code
executing from flash, at 3.0 V
Very low power run mode current - 4
—204449µA6
MHz core / 0.8 MHz bus and flash, all
peripheral clocks disabled, code
executing from flash, at 3.0 V
Very low power run mode current - 4
—262509µA4, 6
MHz core / 0.8 MHz bus and flash, all
peripheral clocks enabled, code
executing from flash, at 3.0 V
Very low power wait mode current -
—123366µA6
core disabled / 4 MHz system / 0.8
MHz bus / flash disabled (flash doze
enabled), all peripheral clocks disabled,
at 3.0 V
Stop mode current at 3.0 Vat 25 °C319343µA—
at 50 °C333365µA
at 70 °C353400µA
at 85 °C380450µA
at 105 °C444572µA
Very-low-power stop mode current at
3.0 V
at 25 °C3.758.46µA—
at 50 °C6.6613.41µA
at 70 °C12.925.71µA
General
Kinetis KL25 Sub-Family, Rev5 08/2014.
Table continues on the next page...
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Freescale Semiconductor, Inc.
Page 12
General
Table 9. Power consumption operating behaviors (continued)
SymbolDescriptionTemp.Typ.MaxUnitNote
at 85 °C22.744.06µA
at 105 °C48.490.1µA
I
DD_LLS
I
DD_VLLS3
I
DD_VLLS1
I
DD_VLLS0
I
DD_VLLS0
Low leakage stop mode current at 3.0
V
Very low-leakage stop mode 3 current
at 3.0 V
Very low-leakage stop mode 1 current
at 3.0 V
Very low-leakage stop mode 0 current
(SMC_STOPCTRL[PORPO] = 0) at 3.0
V
Very low-leakage stop mode 0 current
(SMC_STOPCTRL[PORPO] = 1) at 3.0
V
at 25 °C1.682.09µA—
at 50 °C3.054.04µA
at 70 °C5.717.75µA
at 85 °C1013.54µA
at 105 °C22.430.41µA
at 25 °C1.221.6µA—
at 50 °C2.252.31µA
at 70 °C4.215.44µA
at 85 °C7.379.44µA
at 105 °C16.621.76µA
at 25 °C0.580.94µA—
at 50 °C1.261.31µA
at 70 °C2.533.33µA
at 85 °C4.746.1µA
at 105 °C11.415.27µA
at 25 °C0.310.65µA—
at 50 °C0.991.43µA
at 70 °C2.253.01µA
at 85 °C4.465.83µA
at 105 °C11.1314.99µA
at 25 °C0.120.47µA7
at 50 °C0.81.24µA
at 70 °C2.062.81µA
at 85 °C4.275.62µA
at 105 °C10.9314.78µA
1. The analog supply current is the sum of the active or disabled current for each of the analog modules on the device. See
each module's specification for its supply current.
2. MCG configured for PEE mode. CoreMark benchmark compiled using Keil 4.54 with optimization level 3, optimized for
time.
3. MCG configured for FEI mode.
4. Incremental current consumption from peripheral activity is not included.
5. MCG configured for BLPI mode. CoreMark benchmark compiled using IAR 6.40 with optimization level high, optimized
for balanced.
6. MCG configured for BLPI mode.
7. No brownout.
12
Kinetis KL25 Sub-Family, Rev5 08/2014.
Freescale Semiconductor, Inc.
Page 13
Table 10. Low power mode peripheral adders — typical value
SymbolDescriptionTemperature (°C)Unit
-4025507085105
I
IREFSTEN4MHz
I
IREFSTEN32KHz
I
EREFSTEN4MHz
I
EREFSTEN32KHz
I
CMP
I
RTC
I
UART
I
TPM
4 MHz internal reference clock (IRC) adder.
Measured by entering STOP or VLPS mode
with 4 MHz IRC enabled.
32 kHz internal reference clock (IRC) adder.
Measured by entering STOP mode with the
32 kHz IRC enabled.
External 4 MHz crystal clock adder.
Measured by entering STOP or VLPS mode
with the crystal enabled.
External 32 kHz crystal clock
adder by means of the
OSC0_CR[EREFSTEN and
EREFSTEN] bits. Measured
by entering all modes with
the crystal enabled.
VLLS1440490540560570580nA
VLLS3440490540560570580
LLS490490540560570680
VLPS510560560560610680
STOP510560560560610680
CMP peripheral adder measured by placing
the device in VLLS1 mode with CMP
enabled using the 6-bit DAC and a single
external input for compare. Includes 6-bit
DAC power consumption.
RTC peripheral adder measured by placing
the device in VLLS1 mode with external 32
kHz crystal enabled by means of the
RTC_CR[OSCE] bit and the RTC ALARM
set for 1 minute. Includes ERCLK32K (32
kHz external crystal) power consumption.
UART peripheral adder
measured by placing the
device in STOP or VLPS
mode with selected clock
source waiting for RX data at
115200 baud rate. Includes
selected clock source power
consumption.
MCGIRCLK
(4 MHz
internal
reference
clock)
OSCERCLK
(4 MHz
external
crystal)
TPM peripheral adder
measured by placing the
device in STOP or VLPS
mode with selected clock
source configured for output
compare generating 100 Hz
clock signal. No load is
placed on the I/O generating
the clock signal. Includes
selected clock source and
MCGIRCLK
(4 MHz
internal
reference
clock)
OSCERCLK
(4 MHz
external
crystal)
I/O switching currents.
565656565656µA
525252525252µA
206228237245251258µA
222222222222µA
432357388475532810nA
666666666666µA
214237246254260268
868686868686µA
235256265274280287
General
Kinetis KL25 Sub-Family, Rev5 08/2014.
Table continues on the next page...
13
Freescale Semiconductor, Inc.
Page 14
General
Table 10. Low power mode peripheral adders — typical value (continued)
SymbolDescriptionTemperature (°C)Unit
-4025507085105
I
I
ADC
BG
Bandgap adder when BGEN bit is set and
device is placed in VLPx, LLS, or VLLSx
mode.
ADC peripheral adder combining the
measured values at VDD and V
placing the device in STOP or VLPS mode.
ADC is configured for low power mode using
the internal clock and continuous
conversions.
The following data was measured under these conditions:
• MCG in FBE for run mode, and BLPE for VLPR mode
• USB regulator disabled
• No GPIOs toggled
• Code execution from flash with cache enabled
• For the ALLOFF curve, all peripheral clocks are disabled except FTFA
14
Freescale Semiconductor, Inc.
Kinetis KL25 Sub-Family, Rev5 08/2014.
Page 15
All Off
Temperature = 25, V = 3, CACHE = Enable, Code Residence = Flash, Clocking Mode = FBE
DD
All Peripheral CLK Gates
All On
CLK Ratio
Flash-Core
Core Freq (MHz)
Current Consumption on V
DD(A)
Run Mode Current Vs Core Frequency
8.00E-03
7.00E-03
6.00E-03
5.00E-03
4.00E-03
3.00E-03
2.00E-03
1.00E-03
000.00E+00
'1-1
12
3
4
6
1224
48
'1-1'1-1'1-1'1-1'1-1'1-1'1-2
General
Figure 3. Run mode supply current vs. core frequency
Kinetis KL25 Sub-Family, Rev5 08/2014.
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Freescale Semiconductor, Inc.
Page 16
VLPR Mode Current Vs Core Frequency
Temperature = 25, V = 3, CACHE = Enable, Code Residence = Flash, Clocking Mode = BLPE
DD
All Peripheral CLK Gates
'1-1'1-2'1-2'1-
4
All Off
All On
CLK Ratio
Flash-Core
Core Freq (MHz)
Current Consumption on VDD (A)
400.00E-06
350.00E-06
300.00E-06
250.00E-06
200.00E-06
150.00E-06
100.00E-06
50.00E-06
000.00E+00
12
4
General
Figure 4. VLPR mode current vs. core frequency
2.2.6
EMC radiated emissions operating behaviors
Table 11. EMC radiated emissions operating behaviors for 64-pin LQFP
package
SymbolDescriptionFrequency
band
(MHz)
V
V
V
V
V
RE_IEC
RE1
RE2
RE3
RE4
Radiated emissions voltage, band 10.15–5013dBμV1, 2
Radiated emissions voltage, band 250–15015dBμV
Radiated emissions voltage, band 3150–50012dBμV
Radiated emissions voltage, band 4500–10007dBμV
IEC level0.15–1000M—2, 3
1. Determined according to IEC Standard 61967-1, Integrated Circuits - Measurement of Electromagnetic Emissions, 150
kHz to 1 GHz Part 1: General Conditions and Definitions and IEC Standard 61967-2, Integrated Circuits - Measurement
of Electromagnetic Emissions, 150 kHz to 1 GHz Part 2: Measurement of Radiated Emissions—TEM Cell and
16
Freescale Semiconductor, Inc.
Typ.UnitNotes
Kinetis KL25 Sub-Family, Rev5 08/2014.
Page 17
General
Wideband TEM Cell Method. Measurements were made while the microcontroller was running basic application code.
The reported emission level is the value of the maximum measured emission, rounded up to the next whole number,
from among the measured orientations in each frequency range.
2. VDD = 3.3 V, TA = 25 °C, f
3. Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and
Wideband TEM Cell Method
= 8 MHz (crystal), f
OSC
= 48 MHz, f
SYS
= 48 MHz
BUS
2.2.7Designing with radiated emissions in mind
To find application notes that provide guidance on designing your system to minimize
interference from radiated emissions:
1. Go to www.freescale.com.
2. Perform a keyword search for “EMC design.”
2.2.8Capacitance attributes
Table 12. Capacitance attributes
SymbolDescriptionMin.Max.Unit
C
IN
Input capacitance—7pF
2.3Switching specifications
2.3.1Device clock specifications
Table 13. Device clock specifications
SymbolDescriptionMin.Max.Unit
Normal run mode
f
SYS
f
BUS
f
FLASH
f
SYS_USB
f
LPTMR
f
SYS
f
BUS
f
FLASH
f
LPTMR
System and core clock—48MHz
Bus clock—24MHz
Flash clock—24MHz
System and core clock when Full Speed USB in operation20—MHz
LPTMR clock—24MHz
VLPR and VLPS modes
System and core clock—4MHz
Bus clock—1MHz
Flash clock—1MHz
LPTMR clock
2
Table continues on the next page...
1
—24MHz
Kinetis KL25 Sub-Family, Rev5 08/2014.
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Freescale Semiconductor, Inc.
Page 18
General
Table 13. Device clock specifications (continued)
SymbolDescriptionMin.Max.Unit
f
ERCLK
f
LPTMR_ERCLK
f
osc_hi_2
f
TPM
f
UART0
1. The frequency limitations in VLPR and VLPS modes here override any frequency specification listed in the timing
specification for any other module. These same frequency limits apply to VLPS, whether VLPS was entered from RUN
or from VLPR.
2. The LPTMR can be clocked at this speed in VLPR or VLPS only when the source is an external pin.
External reference clock—16MHz
LPTMR external reference clock—16MHz
Oscillator crystal or resonator frequency — high frequency
GPIO pin interrupt pulse width — Asynchronous path16—ns2
Port rise and fall time—36ns3
1. The greater synchronous and asynchronous timing must be met.
2. This is the shortest pulse that is guaranteed to be recognized.
3. 75 pF load
1.5—Bus clock
cycles
100—ns2
2.4Thermal specifications
2.4.1Thermal operating requirements
Table 15. Thermal operating requirements
1
SymbolDescriptionMin.Max.Unit
T
J
T
A
18
Freescale Semiconductor, Inc.
Die junction temperature–40125°C
Ambient temperature–40105°C
Kinetis KL25 Sub-Family, Rev5 08/2014.
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2.4.2Thermal attributes
Table 16. Thermal attributes
Peripheral operating requirements and behaviors
Board typeSymbolDescription80
Single-layer (1S)R
Four-layer (2s2p)R
Single-layer (1S)R
Four-layer (2s2p)R
—R
—R
—Ψ
Thermal resistance, junction
θJA
to ambient (natural
convection)
Thermal resistance, junction
θJA
to ambient (natural
convection)
Thermal resistance, junction
θJMA
to ambient (200 ft./min. air
speed)
Thermal resistance, junction
θJMA
to ambient (200 ft./min. air
speed)
Thermal resistance, junction
θJB
to board
Thermal resistance, junction
θJC
to case
Thermal characterization
JT
parameter, junction to
package top outside center
(natural convection)
48 QFN 32 QFNUnitNotes
LQFP64LQFP
70718492°C/W1
53522833°C/W
—596975°C/W
—462227°C/W
34341012°C/W2
15202.01.8°C/W3
0.655.08°C/W4
1. Determined according to JEDEC Standard JESD51-2, Integrated Circuits Thermal Test Method Environmental
Conditions—Natural Convection (Still Air), or EIA/JEDEC Standard JESD51-6, Integrated Circuit Thermal Test
Method Environmental Conditions—Forced Convection (Moving Air).
2. Determined according to JEDEC Standard JESD51-8, Integrated Circuit Thermal Test Method Environmental
Conditions—Junction-to-Board.
3. Determined according to Method 1012.1 of MIL-STD 883, Test Method Standard, Microcircuits, with the cold plate
temperature used for the case temperature. The value includes the thermal resistance of the interface material
between the top of the package and the cold plate.
4. Determined according to JEDEC Standard JESD51-2, Integrated Circuits Thermal Test Method EnvironmentalConditions—Natural Convection (Still Air).
J9SWD_DIO input data setup time to SWD_CLK rise10—ns
J10SWD_DIO input data hold time after SWD_CLK rise0—ns
J11SWD_CLK high to SWD_DIO data valid—32ns
J12SWD_CLK high to SWD_DIO high-Z5—ns
20
0
25
—
MHz
ns
20
Freescale Semiconductor, Inc.
Figure 5. Serial wire clock input timing
Kinetis KL25 Sub-Family, Rev5 08/2014.
Page 21
J11
J12
J11
J9
J10
Input data valid
Output data valid
Output data valid
SWD_CLK
SWD_DIO
SWD_DIO
SWD_DIO
SWD_DIO
Peripheral operating requirements and behaviors
Figure 6. Serial wire data timing
3.2
System modules
There are no specifications necessary for the device's system modules.
3.3
Clock modules
3.3.1MCG specifications
Table 18. MCG specifications
SymbolDescriptionMin.Typ.Max.UnitNotes
f
ints_ft
f
ints_t
Δ
fdco_res_t
Internal reference frequency (slow clock) —
factory trimmed at nominal VDD and 25 °C
Internal reference frequency (slow clock) —
user trimmed
Resolution of trimmed average DCO output
frequency at fixed voltage and temperature —
using C3[SCTRIM] and C4[SCFTRIM]
Table continues on the next page...
—32.768—kHz
31.25—39.0625kHz
—± 0.3± 0.6%f
dco
1
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21
Freescale Semiconductor, Inc.
Page 22
Peripheral operating requirements and behaviors
Table 18. MCG specifications (continued)
SymbolDescriptionMin.Typ.Max.UnitNotes
Δf
dco_t
Δf
dco_t
f
intf_ft
Δf
intf_ft
f
intf_t
f
loc_low
f
loc_high
f
fll_ref
f
dco
f
dco_t_DMX3
J
cyc_fll
t
fll_acquire
f
vco
I
I
f
pll_ref
J
cyc_pll
Total deviation of trimmed average DCO output
—+0.5/-0.7± 3%f
frequency over voltage and temperature
Total deviation of trimmed average DCO output
—± 0.4± 1.5%f
frequency over fixed voltage and temperature
range of 0–70 °C
Internal reference frequency (fast clock) —
—4—MHz
factory trimmed at nominal VDD and 25 °C
Frequency deviation of internal reference clock
—+1/-2± 3%f
(fast clock) over temperature and voltage —
factory trimmed at nominal VDD and 25 °C
Internal reference frequency (fast clock) —
3—5MHz
user trimmed at nominal VDD and 25 °C
Loss of external clock minimum frequency —
RANGE = 00
Loss of external clock minimum frequency —
RANGE = 01, 10, or 11
(3/5) x
f
ints_t
(16/5) x
f
ints_t
——kHz
——kHz
FLL
FLL reference frequency range31.25—39.0625kHz
DCO output
frequency range
DCO output
frequency
2
FLL period jitter
• f
= 48 MHz
VCO
Low range (DRS = 00)
640 × f
fll_ref
Mid range (DRS = 01)
1280 × f
fll_ref
Low range (DRS = 00)
732 × f
fll_ref
Mid range (DRS = 01)
1464 × f
fll_ref
2020.9725MHz3, 4
4041.9448MHz
—23.99—MHz5, 6
—47.97—MHz
—180—ps7
FLL target frequency acquisition time——1ms8
PLL
VCO operating frequency48.0—100MHz
PLL operating current
pll
• PLL at 96 MHz (f
osc_hi_1
= 8 MHz, f
pll_ref
=
—1060—µA
2 MHz, VDIV multiplier = 48)
PLL operating current
pll
• PLL at 48 MHz (f
osc_hi_1
= 8 MHz, f
pll_ref
=
—600—µA
2 MHz, VDIV multiplier = 24)
PLL reference frequency range2.0—4.0MHz
PLL period jitter (RMS)
• f
= 48 MHz
vco
• f
= 100 MHz
vco
—
—
120
50
—
—
dco
dco
intf_ft
ps
ps
1, 2
1, 2
2
9
9
10
22
Freescale Semiconductor, Inc.
Table continues on the next page...
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Peripheral operating requirements and behaviors
Table 18. MCG specifications (continued)
SymbolDescriptionMin.Typ.Max.UnitNotes
J
acc_pll
PLL accumulated jitter over 1µs (RMS)
• f
= 48 MHz
vco
• f
= 100 MHz
vco
—
—
1350
600
—
—
10
ps
ps
D
D
t
pll_lock
Lock entry frequency tolerance± 1.49—± 2.98%
lock
Lock exit frequency tolerance± 4.47—± 5.97%
unl
Lock detector detection time——150 × 10
-6
s11
+ 1075(1/
f
)
pll_ref
1. This parameter is measured with the internal reference (slow clock) being used as a reference to the FLL (FEI clock
mode).
2. The deviation is relative to the factory trimmed frequency at nominal VDD and 25 °C, f
ints_ft
.
3. These typical values listed are with the slow internal reference clock (FEI) using factory trim and DMX32 = 0.
4. The resulting system clock frequencies must not exceed their maximum specified values. The DCO frequency
deviation (Δf
) over voltage and temperature must be considered.
dco_t
5. These typical values listed are with the slow internal reference clock (FEI) using factory trim and DMX32 = 1.
6. The resulting clock frequency must not exceed the maximum specified clock frequency of the device.
7. This specification is based on standard deviation (RMS) of period or frequency.
8. This specification applies to any time the FLL reference source or reference divider is changed, trim value is changed,
DMX32 bit is changed, DRS bits are changed, or changing from FLL disabled (BLPE, BLPI) to FLL enabled (FEI, FEE,
FBE, FBI). If a crystal/resonator is being used as the reference, this specification assumes it is already running.
9. Excludes any oscillator currents that are also consuming power while PLL is in operation.
10. This specification was obtained using a Freescale developed PCB. PLL jitter is dependent on the noise
characteristics of each PCB and results will vary.
11. This specification applies to any time the PLL VCO divider or reference divider is changed, or changing from PLL
disabled (BLPE, BLPI) to PLL enabled (PBE, PEE). If a crystal/resonator is being used as the reference, this
specification assumes it is already running.
3.3.2Oscillator electrical specifications
3.3.2.1Oscillator DC electrical specifications
Table 19. Oscillator DC electrical specifications
SymbolDescriptionMin.Typ.Max.UnitNotes
V
I
DDOSC
Kinetis KL25 Sub-Family, Rev5 08/2014.
Supply voltage1.71—3.6V
DD
Supply current — low-power mode (HGO=0)
• 32 kHz
• 4 MHz
• 8 MHz (RANGE=01)
• 16 MHz
—
—
—
—
—
500
200
300
950
1.2
Table continues on the next page...
—
—
—
—
—
nA
μA
μA
μA
mA
Freescale Semiconductor, Inc.
1
23
Page 24
Peripheral operating requirements and behaviors
Table 19. Oscillator DC electrical specifications (continued)
2. See crystal or resonator manufacturer's recommendation
24
Freescale Semiconductor, Inc.
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Peripheral operating requirements and behaviors
3. Cx,Cy can be provided by using the integrated capacitors when the low frequency oscillator (RANGE = 00) is used. For
all other cases external capacitors must be used.
4. When low power mode is selected, RF is integrated and must not be attached externally.
5. The EXTAL and XTAL pins should only be connected to required oscillator components and must not be connected to
any other devices.
3.3.2.2Oscillator frequency specifications
Table 20. Oscillator frequency specifications
SymbolDescriptionMin.Typ.Max.UnitNotes
f
osc_lo
f
osc_hi_1
f
osc_hi_2
f
ec_extal
t
dc_extal
t
cst
Oscillator crystal or resonator frequency — lowfrequency mode (MCG_C2[RANGE]=00)
Oscillator crystal or resonator frequency —
high-frequency mode (low range)
(MCG_C2[RANGE]=01)
Oscillator crystal or resonator frequency —
high frequency mode (high range)
(MCG_C2[RANGE]=1x)
1. Other frequency limits may apply when external clock is being used as a reference for the FLL or PLL.
2. When transitioning from FEI or FBI to FBE mode, restrict the frequency of the input clock so that, when it is divided by
FRDIV, it remains within the limits of the DCO input clock frequency.
3. Proper PC board layout procedures must be followed to achieve specifications.
4. Crystal startup time is defined as the time between the oscillator being enabled and the OSCINIT bit in the MCG_S
register being set.
3.4Memories and memory interfaces
3.4.1Flash electrical specifications
This section describes the electrical characteristics of the flash memory module.
Kinetis KL25 Sub-Family, Rev5 08/2014.
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25
Page 26
Peripheral operating requirements and behaviors
3.4.1.1Flash timing specifications — program and erase
The following specifications represent the amount of time the internal charge pumps are
active and do not include command overhead.
Table 21. NVM program/erase timing specifications
SymbolDescriptionMin.Typ.Max.UnitNotes
t
hvpgm4
t
hversscr
t
hversall
1. Maximum time based on expectations at cycling end-of-life.
Longword Program high-voltage time—7.518μs—
Sector Erase high-voltage time—13113ms1
Erase All high-voltage time—52452ms1
3.4.1.2Flash timing specifications — commands
Table 22. Flash command timing specifications
SymbolDescriptionMin.Typ.Max.UnitNotes
t
rd1sec1k
t
pgmchk
t
rdrsrc
t
pgm4
t
ersscr
t
rd1all
t
rdonce
t
pgmonce
t
ersall
t
vfykey
Read 1s Section execution time (flash sector)——60μs1
Program Check execution time——45μs1
Read Resource execution time——30μs1
Program Longword execution time—65145μs—
Erase Flash Sector execution time—14114ms2
Read 1s All Blocks execution time——1.8ms—
Read Once execution time——25μs1
Program Once execution time—65—μs—
Erase All Blocks execution time—88650ms2
Verify Backdoor Access Key execution time——30μs1
1. Assumes 25 MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3.4.1.3Flash high voltage current behaviors
Table 23. Flash high voltage current behaviors
SymbolDescriptionMin.Typ.Max.Unit
I
DD_PGM
I
DD_ERS
26
Freescale Semiconductor, Inc.
Average current adder during high voltage
flash programming operation
Average current adder during high voltage
flash erase operation
—2.56.0mA
—1.54.0mA
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Peripheral operating requirements and behaviors
3.4.1.4Reliability specifications
Table 24. NVM reliability specifications
SymbolDescriptionMin.Typ.
Program Flash
t
nvmretp10k
t
nvmretp1k
n
nvmcycp
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a
constant 25 °C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in
Engineering Bulletin EB619.
2. Cycling endurance represents number of program/erase cycles at -40 °C ≤ Tj ≤ 125 °C.
Data retention after up to 10 K cycles550—years—
Data retention after up to 1 K cycles20100—years—
Cycling endurance10 K50 K—cycles2
1
Max.UnitNotes
3.5Security and integrity modules
There are no specifications necessary for the device's security and integrity modules.
3.6
Analog
3.6.1ADC electrical specifications
The 16-bit accuracy specifications listed in Table 25 and Table 26 are achievable on
the differential pins ADCx_DP0, ADCx_DM0.
All other ADC channels meet the 13-bit differential/12-bit single-ended accuracy
specifications.
3.6.1.1
SymbolDescriptionConditionsMin.Typ.
V
DDA
ΔV
DDA
ΔV
SSA
V
REFH
V
REFL
16-bit ADC operating conditions
Table 25. 16-bit ADC operating conditions
1
Supply voltageAbsolute1.71—3.6V—
Supply voltageDelta to VDD (VDD – V
Ground voltageDelta to VSS (V
ADC reference
Continuous conversions
enabled, subsequent
conversion time
C
rate
ADC conversion
rate
16-bit mode
No ADC hardware averaging
37.037
—
461.467
Ksps
6
Continuous conversions
enabled, subsequent
conversion time
1. Typical values assume V
= 3.0 V, Temp = 25 °C, f
DDA
= 1.0 MHz, unless otherwise stated. Typical values are for
ADCK
reference only, and are not tested in production.
2. DC potential difference.
3. For packages without dedicated VREFH and VREFL pins, V
V
.
SSA
is internally tied to V
REFH
DDA
, and V
is internally tied to
REFL
4. This resistance is external to MCU. To achieve the best results, the analog source resistance must be kept as low as
possible. The results in this data sheet were derived from a system that had < 8 Ω analog source resistance. The
RAS/CAS time constant should be kept to < 1 ns.
5. To use the maximum ADC conversion clock frequency, CFG2[ADHSC] must be set and CFG1[ADLPC] must be clear.
6. For guidelines and examples of conversion rate calculation, download the ADC calculator tool.
28
Freescale Semiconductor, Inc.
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RAS
VAS
CAS
ZAS
VADIN
ZADIN
RADIN
RADIN
RADIN
RADIN
CADIN
Pad
leakage
due to
input
protection
INPUT PIN
INPUT PIN
INPUT PIN
SIMPLIFIED
INPUT PIN EQUIVALENT
CIRCUIT
SIMPLIFIED
CHANNEL SELECT
CIRCUIT
ADC SAR
ENGINE
Peripheral operating requirements and behaviors
Figure 7. ADC input impedance equivalency diagram
3.6.1.2
16-bit ADC electrical characteristics
Table 26. 16-bit ADC characteristics (V
SymbolDescriptionConditions
I
DDA_ADC
f
ADACK
TUETotal unadjusted
Supply current0.215—1.7mA3
ADC
asynchronous
clock source
Sample TimeSee Reference Manual chapter for sample times
error
1
• ADLPC = 1, ADHSC =
0
• ADLPC = 1, ADHSC =
1
• ADLPC = 0, ADHSC =
0
• ADLPC = 0, ADHSC =
1
• 12-bit modes
• <12-bit modes
= V
REFH
Min.Typ.
1.2
2.4
3.0
4.4
—
—
DDA
2.4
4.0
5.2
6.2
±4
±1.4
, V
2
REFL
= V
SSA
)
Max.UnitNotes
3.9
6.1
7.3
9.5
±6.8
MHz
MHz
MHz
MHz
LSB
t
1/f
4
±2.1
ADACK
ADACK
5
=
DNLDifferential non-
• 12-bit modes
linearity
• <12-bit modes
Kinetis KL25 Sub-Family, Rev5 08/2014.
—
—
Table continues on the next page...
±0.7
±0.2
–1.1 to
LSB
4
+1.9
–0.3 to 0.5
Freescale Semiconductor, Inc.
5
29
Page 30
Peripheral operating requirements and behaviors
Table 26. 16-bit ADC characteristics (V
SymbolDescriptionConditions
INLIntegral non-
• 12-bit modes
linearity
• <12-bit modes
E
Full-scale error• 12-bit modes
FS
• <12-bit modes
E
ENOBEffective number
Q
Quantization
error
of bits
• 16-bit modes
• ≤13-bit modes
16-bit differential mode
• Avg = 32
• Avg = 4
16-bit single-ended mode
• Avg = 32
• Avg = 4
SINAD
Signal-to-noise
plus distortion
THDTotal harmonic
distortion
See ENOB
16-bit differential mode
• Avg = 32
16-bit single-ended mode
• Avg = 32
1
= V
REFH
Min.Typ.
—
—
—
—
—
—
12.8
11.9
12.2
11.4
—
—
DDA
, V
±1.0
REFL
2
= V
) (continued)
SSA
Max.UnitNotes
–2.7 to
LSB
+1.9
±0.5
–0.7 to
+0.5
–4
–1.4
–1 to 0
—
14.5
13.8
13.9
13.1
–5.4
–1.8
—
±0.5
—
—
—
—
LSB
LSB
bits
bits
bits
bits
6.02 × ENOB + 1.76dB
-94
-85
—
—
dB
dB
4
4
4
V
ADIN
V
5
DDA
=
5
6
7
SFDRSpurious free
dynamic range
E
IL
Input leakage
error
Temp sensor
slope
V
TEMP25
Temp sensor
voltage
30
Freescale Semiconductor, Inc.
16-bit differential mode
82
95
—
dB
• Avg = 32
78
90
—
dB
16-bit single-ended mode
• Avg = 32
IIn × R
AS
mVIIn =
leakage
current
(refer to
the MCU's
voltage
and
current
operating
ratings)
Across the full temperature
1.551.621.69mV/°C8
range of the device
25 °C706716726mV8
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Page 31
Typical ADC 16-bit Differential ENOB vs ADC Clock
100Hz, 90% FS Sine Input
ENOB
ADC Clock Frequency (MHz)
15.00
14.70
14.40
14.10
13.80
13.50
13.20
12.90
12.60
12.30
12.00
123456789101211
Hardware Averaging Disabled
Averaging of 4 samples
Averaging of 8 samples
Averaging of 32 samples
Typical ADC 16-bit Single-Ended ENOB vs ADC Clock
100Hz, 90% FS Sine Input
ENOB
ADC Clock Frequency (MHz)
14.00
13.75
13.25
13.00
12.75
12.50
12.00
11.75
11.50
11.25
11.00
123456789101211
Averaging of 4 samples
Averaging of 32 samples
13.50
12.25
Peripheral operating requirements and behaviors
1. All accuracy numbers assume the ADC is calibrated with V
2. Typical values assume V
= 3.0 V, Temp = 25 °C, f
DDA
ADCK
= V
REFH
DDA
= 2.0 MHz unless otherwise stated. Typical values are for
reference only and are not tested in production.
3. The ADC supply current depends on the ADC conversion clock speed, conversion rate and ADC_CFG1[ADLPC] (low
power). For lowest power operation, ADC_CFG1[ADLPC] must be set, the ADC_CFG2[ADHSC] bit must be clear with
1 MHz ADC conversion clock speed.
1. Typical hysteresis is measured with input voltage range limited to 0.7 to VDD – 0.7 V.
2. Comparator initialization delay is defined as the time between software writes to change control inputs (writes to
DACEN, VRSEL, PSEL, MSEL, VOSEL) and the comparator output settling to a stable level.
5. Calculated by a best fit curve from VSS + 100 mV to V
6. V
= 3.0 V, reference select set for V
DDA
−100 mV
DACR
−100 mV
DACR
−100 mV with V
DACR
(DACx_CO:DACRFS = 1), high power mode (DACx_C0:LPEN = 0), DAC
DDA
DACR
− 100 mV
set to 0x800, temperature range is across the full range of the device
DDA
—
—
> 2.4 V
—
—
kHz
Figure 12. Typical INL error vs. digital code
Kinetis KL25 Sub-Family, Rev5 08/2014.
35
Freescale Semiconductor, Inc.
Page 36
Temperature °C
DAC12 Mid Level Code Voltage
25
55
85
105125
1.499
-40
1.4985
1.498
1.4975
1.497
1.4965
1.496
Peripheral operating requirements and behaviors
3.7
Timers
Figure 13. Offset at half scale vs. temperature
See General switching specifications.
3.8
Communication interfaces
3.8.1USB electrical specifications
The USB electricals for the USB On-the-Go module conform to the standards
documented by the Universal Serial Bus Implementers Forum. For the most up-to-date
standards, visit usb.org.
36
Freescale Semiconductor, Inc.
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Peripheral operating requirements and behaviors
NOTE
The MCGPLLCLK meets the USB jitter specifications for
certification with the use of an external clock/crystal for
both Device and Host modes.
The MCGFLLCLK does not meet the USB jitter
specifications for certification.
3.8.2USB VREG electrical specifications
Table 30. USB VREG electrical specifications
650
—
1
Max.UnitNotes
—
4
SymbolDescriptionMin.Typ.
VREGIN Input supply voltage2.7—5.5V
I
DDon
I
DDstby
I
DDoff
Quiescent current — Run mode, load current
equal zero, input supply (VREGIN) > 3.6 V
Quiescent current — Standby mode, load
current equal zero
The Serial Peripheral Interface (SPI) provides a synchronous serial bus with master and
slave operations. Many of the transfer attributes are programmable. The following
tables provide timing characteristics for classic SPI timing modes. See the SPI chapter
of the chip's Reference Manual for information about the modified transfer formats used
for communicating with slower peripheral devices.
All timing is shown with respect to 20% VDD and 80% VDD thresholds, unless noted, as
well as input signal transitions of 3 ns and a 30 pF maximum load on all SPI pins.
1. The maximum SCL Clock Frequency in Fast mode with maximum bus loading can only achieved when using the High
drive pins (see Voltage and current operating behaviors) or when using the Normal drive pins and VDD ≥ 2.7 V
42
Freescale Semiconductor, Inc.
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SDA
HD; STA
t
HD; DAT
t
LOW
t
SU; DAT
t
HIGH
t
SU; STA
SR
P
S
S
t
HD; STA
t
SP
t
SU; STO
t
BUF
t
f
t
r
t
f
t
r
SCL
Peripheral operating requirements and behaviors
2. The master mode I2C deasserts ACK of an address byte simultaneously with the falling edge of SCL. If no slaves
acknowledge this address byte, then a negative hold time can result, depending on the edge rates of the SDA and
SCL lines.
3. The maximum tHD; DAT must be met only if the device does not stretch the LOW period (tLOW) of the SCL signal.
4. Input signal Slew = 10 ns and Output Load = 50 pF
5. Set-up time in slave-transmitter mode is 1 IPBus clock period, if the TX FIFO is empty.
6. A Fast mode I2C bus device can be used in a Standard mode I2C bus system, but the requirement t
SU; DAT
≥ 250 ns
must then be met. This is automatically the case if the device does not stretch the LOW period of the SCL signal. If
such a device does stretch the LOW period of the SCL signal, then it must output the next data bit to the SDA line t
+ t
= 1000 + 250 = 1250 ns (according to the Standard mode I2C bus specification) before the SCL line is
SU; DAT
released.
7. Cb = total capacitance of the one bus line in pF.
rmax
Figure 18. Timing definition for fast and standard mode devices on the I2C bus
3.8.5
UART
See General switching specifications.
3.9
Human-machine interfaces (HMI)
3.9.1TSI electrical specifications
Table 36. TSI electrical specifications
SymbolDescriptionMin.Typ.Max.Unit
TSI_RUNFFixed power consumption in run mode—100—µA
TSI_RUNVVariable power consumption in run mode
(depends on oscillator's current selection)
TSI_ENPower consumption in enable mode—100—µA
TSI_DISPower consumption in disable mode—1.2—µA
TSI_TENTSI analog enable time—66—µs
TSI_CREFTSI reference capacitor—1.0—pF
TSI_DVOLTVoltage variation of VP & VM around nominal
values
Kinetis KL25 Sub-Family, Rev5 08/2014.
1.0—128µA
0.19—1.03V
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Dimensions
4Dimensions
4.1Obtaining package dimensions
Package dimensions are provided in package drawings.
To find a package drawing, go to freescale.com and perform a keyword search for the
drawing’s document number:
If you want the drawing for this packageThen use this document number
The following table shows the signals available on each pin and the locations of these
pins on the devices supported by this document. The Port Control Module is responsible
for selecting which ALT functionality is available on each pin.
The following figures show the pinout diagrams for the devices supported by this
document. Many signals may be multiplexed onto a single pin. To determine what
signals can be used on which pin, see KL25 Signal Multiplexing and Pin
Assignments.
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60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
VSSA
VREFL
VREFH
VDDA
PTE23
PTE22
PTE21
PTE20
VREGIN
VOUT33
USB0_DM
USB0_DP
VSS
VDD
PTE5
PTE4
PTE3
PTE2
PTE1
PTE0
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
PTD7
PTD6/LLWU_P15
PTD5
PTD4/LLWU_P14
PTD3
PTD2
PTD1
PTD0
PTC17
PTC16
PTC13
PTC12
PTC11
PTC10
PTC9
PTC8
PTC7
PTC6/LLWU_P10
PTC5/LLWU_P9
PTC4/LLWU_P8
VDD
VSS
PTC3/LLWU_P7
PTC2
PTC1/LLWU_P6/RTC_CLKIN
PTC0
PTB19
PTB18
PTB17
PTB16
PTB11
PTB10
PTB9
PTB8
PTB3
PTB2
PTB1
PTB0/LLWU_P5
PTA20
PTA19
PTA18
VSS
VDD
PTA17
PTA16
PTA15
PTA14
PTA13
PTA12
PTA5
PTA4
PTA3
PTA2
PTA1
PTA0
PTE25
PTE24
PTE31
PTE30
PTE29
Pinout
Figure 19. KL25 80-pin LQFP pinout diagram
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PTE24
PTE31
PTE30
PTE29
VSSA
VREFL
VREFH
VDDA
PTE23
PTE22
PTE21
PTE20
VREGIN
VOUT33
USB0_DM
USB0_DP
VSS
VDD
PTE1
PTE0
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
64
63
62
61
PTD7
PTD6/LLWU_P15
PTD5
PTD4/LLWU_P14
PTD3
PTD2
PTD1
PTD0
PTC11
PTC10
PTC9
PTC8
PTC7
PTC6/LLWU_P10
PTC5/LLWU_P9
PTC4/LLWU_P8
VDD
VSS
PTC3/LLWU_P7
PTC2
PTC1/LLWU_P6/RTC_CLKIN
PTC0
PTB19
PTB18
PTB17
PTB16
PTB3
PTB2
PTB1
PTB0/LLWU_P5
PTA20
PTA19
PTA18
VSS
VDD
PTA13
PTA12
PTA5
PTA4
PTA3
PTA2
PTA1
PTA0
PTE25
Pinout
Figure 20. KL25 64-pin LQFP pinout diagram
Kinetis KL25 Sub-Family, Rev5 08/2014.
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VSSA
VREFL
VREFH
VDDA
PTE21
PTE20
VREGIN
VOUT33
USB0_DM
USB0_DP
VSS
VDD
12
11
10
9
8
7
6
5
4
3
2
1
48
47
46
45
44
43
42
41
40
39
38
37
PTD7
PTD6/LLWU_P15
PTD5
PTD4/LLWU_P14
PTD3
PTD2
PTD1
PTD0
PTC7
PTC6/LLWU_P10
PTC5/LLWU_P9
PTC4/LLWU_P8
36
35
34
33
PTC3/LLWU_P7
PTC2
PTC1/LLWU_P6/RTC_CLKIN
PTC0
32
31
30
29
28
27
26
25
PTB17
PTB16
PTB3
PTB2
PTB1
PTB0/LLWU_P5
PTA20
PTA19
PTA3
PTA2
PTA1
PTA0
24
23
22
21
20
19
18
17
PTE25
PTE24
PTE30
PTE29
16
15
14
13
PTA18
VSS
VDD
PTA4
Pinout
Figure 21. KL25 48-pin QFN pinout diagram
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32
31
30
29
28
27
26
25
PTD7
PTD6/LLWU_P15
PTD5
PTD4/LLWU_P14
PTC7
PTC6/LLWU_P10
PTC5/LLWU_P9
PTC4/LLWU_P8
PTA2
PTA1
PTA0
PTE30
12
11
10
9
VSS
VDD
PTA4
PTA3
16
15
14
13
PTB0/LLWU_P5
PTA20
PTA19
PTA18
24
23
22
21
20
19
18
17
PTC3/LLWU_P7
PTC2
PTC1/LLWU_P6/RTC_CLKIN
PTB1
VSSA
VDDA
VREGIN
VOUT33
USB0_DM
USB0_DP
VSS
PTE0
8
7
6
5
4
3
2
1
Ordering parts
Figure 22. KL25 32-pin QFN pinout diagram
6
Ordering parts
6.1Determining valid orderable parts
Valid orderable part numbers are provided on the web. To determine the orderable
part numbers for this device, go to freescale.com and perform a part number search
for the following device numbers: PKL25 and MKL25
Part identification
7
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Part identification
7.1Description
Part numbers for the chip have fields that identify the specific part. You can use the
values of these fields to determine the specific part you have received.
7.2Format
Part numbers for this device have the following format:
Q KL## A FFF R T PP CC N
7.3
Fields
This table lists the possible values for each field in the part number (not all
combinations are valid):
Table 37. Part number fields descriptions
FieldDescriptionValues
QQualification status• M = Fully qualified, general market flow
• P = Prequalification
KL##Kinetis family• KL25
AKey attribute• Z = Cortex-M0+
FFFProgram flash memory size• 32 = 32 KB
• 64 = 64 KB
• 128 = 128 KB
RSilicon revision• (Blank) = Main
• A = Revision after main
TTemperature range (°C)• V = –40 to 105
PPPackage identifier• FM = 32 QFN (5 mm x 5 mm)
• FT = 48 QFN (7 mm x 7 mm)
• LH = 64 LQFP (10 mm x 10 mm)
• LK = 80 LQFP (12 mm x 12 mm)
CCMaximum CPU frequency (MHz)• 4 = 48 MHz
NPackaging type• R = Tape and reel
• (Blank) = Trays
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Terminology and guidelines
7.4Example
This is an example part number:
MKL25Z64VLK4
8Terminology and guidelines
8.1Definition: Operating requirement
An operating requirement is a specified value or range of values for a technical
characteristic that you must guarantee during operation to avoid incorrect operation
and possibly decreasing the useful life of the chip.
8.1.1Example
This is an example of an operating requirement:
SymbolDescriptionMin.Max.Unit
V
DD
1.0 V core supply
voltage
0.91.1V
8.2Definition: Operating behavior
Unless otherwise specified, an operating behavior is a specified value or range of
values for a technical characteristic that are guaranteed during operation if you meet
the operating requirements and any other specified conditions.
8.2.1
This is an example of an operating behavior:
Example
SymbolDescriptionMin.Max.Unit
I
WP
Kinetis KL25 Sub-Family, Rev5 08/2014.
Digital I/O weak pullup/
pulldown current
10130µA
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Terminology and guidelines
8.3Definition: Attribute
An attribute is a specified value or range of values for a technical characteristic that are
guaranteed, regardless of whether you meet the operating requirements.
8.3.1Example
This is an example of an attribute:
SymbolDescriptionMin.Max.Unit
CIN_DInput capacitance:
digital pins
—7pF
8.4Definition: Rating
A rating is a minimum or maximum value of a technical characteristic that, if exceeded,
may cause permanent chip failure:
• Operating ratings apply during operation of the chip.
• Handling ratings apply when the chip is not powered.
8.4.1
This is an example of an operating rating:
V
DD
Example
SymbolDescriptionMin.Max.Unit
1.0 V core supply
voltage
–0.31.2V
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40
30
20
10
0
Measured characteristic
Operating rating
Failures in time (ppm)
The likelihood of permanent chip failure increases rapidly as
soon as a characteristic begins to exceed one of its operating ratings.
–∞
- No permanent failure
- Correct operation
Normal operating range
Fatal range
Expected permanent failure
Fatal range
Expected permanent failure
∞
Operating rating (max.)
Operating requirement (max.)
Operating requirement (min.)
Operating rating (min.)
Operating (power on)
Degraded operating range
Degraded operating range
–∞
No permanent failure
Handling range
Fatal range
Expected permanent failure
Fatal range
Expected permanent failure
∞
Handling rating (max.)
Handling rating (min.)
Handling (power off)
- No permanent failure
- Possible decreased life
- Possible incorrect operation
- No permanent failure
- Possible decreased life
- Possible incorrect operation
Terminology and guidelines
8.5Result of exceeding a rating
8.6Relationship between ratings and operating requirements
8.7Guidelines for ratings and operating requirements
Follow these guidelines for ratings and operating requirements:
• Never exceed any of the chip’s ratings.
• During normal operation, don’t exceed any of the chip’s operating requirements.
• If you must exceed an operating requirement at times other than during normal
operation (for example, during power sequencing), limit the duration as much as
possible.
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Terminology and guidelines
8.8Definition: Typical value
A typical value is a specified value for a technical characteristic that:
• Lies within the range of values specified by the operating behavior
• Given the typical manufacturing process, is representative of that characteristic
during operation when you meet the typical-value conditions or other specified
conditions
Typical values are provided as design guidelines and are neither tested nor guaranteed.
8.8.1Example 1
This is an example of an operating behavior that includes a typical value:
SymbolDescriptionMin.Typ.Max.Unit
I
WP
Digital I/O weak
pullup/pulldown
current
1070130µA
8.8.2Example 2
This is an example of a chart that shows typical values for various voltage and
temperature conditions:
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0.90
0.95
1.00
1.05
1.10
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
150 °C
105 °C
25 °C
–40 °C
VDD(V)
I
(μA)
DD_STOP
T
J
Revision history
8.9Typical value conditions
Typical values assume you meet the following conditions (or other conditions as
specified):
Table 38. Typical value conditions
SymbolDescriptionValueUnit
T
A
V
DD
Ambient temperature25°C
3.3 V supply voltage3.3V
9Revision history
The following table provides a revision history for this document.
Table 39. Revision history
Rev. No.DateSubstantial Changes
29/2012Completed all the TBDs, initial public release.
39/2012Updated Signal Multiplexing and Pin Assignments table to add UART2
signals.
43/2014• Updated the front page and restructured the chapters
Table continues on the next page...
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Revision history
Rev. No.DateSubstantial Changes
5
Table 39. Revision history (continued)
• Added a note to the I
• Updated Voltage and current operating ratings
• Updated Voltage and current operating requirements
• Updated the Voltage and current operating behaviors
• Updated Power mode transition operating behaviors
• Updated Capacitance attributes
• Updated footnote in the Device clock specifications
• Updated t
in the Flash timing specifications — commands
ersall
• Updated VADIN in the 16-bit ADC operating conditions
• Updated Temp sensor slope and voltage and added a note to
them in the 16-bit ADC electrical characteristics
• Removed TA in the 12-bit DAC operating requirements
08/2014• Updated related source and added block diagram in the front
page
• Updated Power consumption operating behaviors
• Updated the note in USB electrical specifications
in the ESD handling ratings
LAT
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How to Reach Us:
Home Page:
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Information in this document is provided solely to enable system and
software implementers to use Freescale products. There are no express
or implied copyright licenses granted hereunder to design or fabricate
any integrated circuits based on the information in this document.
Freescale reserves the right to make changes without further notice to
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the suitability of its products for any particular purpose, nor does
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including without limitation consequential or incidental damages.
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and/or specifications can and do vary in different applications, and
actual performance may vary over time. All operating parameters,
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