Force-Mos MESS138W, MESS138W-G Schematics

J

N - Channel 50-V (D-S) MOSFET

MESS138W/MESS138W-G

GENERAL DESCRIPTION

The MESS138W is the N-Channel logic enhancement mode power

field effect transistors are produced using high cell density, DMOS

trench technology. This high density process is especially tailored to

minimize on-state resistance.

PIN CONFIGURATION

(SOT-323)

Top View

FEATURES

● RDS(ON)≦3Ω@VGS=10V

● R

DS(ON)≦3.5Ω@VGS=5V

● RDS(ON)≦7Ω@VGS=2.75V

● Super high density cell design for extremely low R

● Exceptional on-resistance and maximum DC current

capability

DS(ON)

APPLICATIONS

● Power Management in Note book

● DC/DC Converter

● Load Switch

● LCD Display inverter

Ordering Information: MESS138W (Pb-free)

MESS138W-G (Green product-Halogen free)

Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)

Parameter Symbol

Drain-Source Voltage VDS 50 V

Gate-Source Voltage VGS ±20 V

Continuous Drain

TA=25℃

Pulsed Drain Current IDM 1.8 A

A=25℃

Maximum Power Dissipation

T

Maximum Ratings

I

D 0.5 A

P

D 1 W

Unit

Operating Junction Temperature TJ -55 to 150

Thermal Resistance-Junction to Ambient*

* The device mounted on 1in

an, 2007-Ve r1.1

Oct, 2011-Ver1.0

2

FR4 board with 2 oz copper

θJA 130

R

℃

℃/W

01

N - Channel 50-V (D-S) MOSFET

MESS138W/MESS138W-G

Electrical Characteristics (T

Symbol Parameter Limit Min Typ Max Unit

STATIC

BVDSS Drain-Source Breakdown Voltage

VGS(th) Gate Threshold Voltage VDS=VGS, ID=1mA 0.5 1.5 V

IGSS Gate-Body Leakage VDS=0V, VGS=±20V ±100 nA

A =25℃ Unless Otherwise Specified)

GS=0V, ID=250μA

V

50 V

IDSS Zero Gate Voltage Drain Current VDS=50V, VGS=0V

VGS=10V, ID=200mA 1.3 3

RDS(ON) Drain-Source On-Resistance*

VSD Diode Forward Voltage * IS=0.44A, VGS=0V 0.8 1.4 V

DYNAMIC

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

Rg Gate Resistance VDS=0V, V

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

td(on)

tr

td(off)

tf

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

VGS=5V, ID=200mA 1.4 3.5

V

GS=2.75V, ID=200mA 1.6 7

7.0

1.8

0.7

8.7

42

15

3

4.63

18.9

6.8

11.4

V

DS=25V, VGS=10V, ID=0.22A

=0V, f=1MHz

GS

V

DS=25V, VGS=0V, f=1MHz

V

DD=30V, RL =103Ω

I

D=0.29A, VGS=10V,

R

GEN=6Ω

0.5 μA

Ω

nC

Ω

pF

ns

Notes: a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2%

b.

Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.

Oct, 2011-Ver1.0

02