Force-Mos ME4932A Schematics

A

Dual N-Channel 30-V(D-S) MOSFET

ME4932A/ME4932A-G

GENERAL DESCRIPTION

The ME4932A is the Dual N-Channel logic enhancement mode

power field effect transistors are produced using high cell density ,

DMOS trench technology integrated Schottky diode. This high

density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such

as cellular phone and notebook computer power management and

other battery powered circuits where high-side switching , and low

in-line power loss are needed in a very small outline surface mount

PIN CONFIGURATION

(SOP-8)

Top View

FEATURES

● Schottky diode Integrated

● FET1:RDS(ON)≦12mΩ@VGS=10V

● FET1:RDS(ON)≦22mΩ@VGS=4.5V

● FET2:RDS(ON)≦15.8mΩ@VGS=10V

● FET2:RDS(ON)≦23mΩ@VGS=4.5V

● Super high density cell design for extremely low RDS(ON)

● Exceptional on-resistance and maximum DC current

capability

APPLICATIONS

● Power Management in Note book

● Battery Powered System

Ordering Information: ME4932A (Pb-free)

ME4932A-G (Green product- Halogen free)

Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)

Drain-Source Voltage VDSS 30 30 V

Gate-Source Voltage VGSS ±20 ±20 V

Continuous Drain

Pulsed Drain Current IDM 41 36 A

Maximum Power Dissipation*

Operating Junction Temperature TJ -55 to 150 ℃

Thermal Resistance-Junction to Ambient*

Parameter Symbol

TA=25℃ 10.2 9

TA=70℃

TA=25℃ 2 2

TA=70℃

FET1 FET2

Maximum Ratings Maximum Ratings

ID

PD

θJA 62.5 62.5

R

8.2 7.2

1.3 1.3

Unit

A

W

℃/W

* The device mounted on 1in

ug, 2011-Ver1.0

Jul, 2012-Ver1.3

2

FR4 board with 2 oz copper

01

A

FET1

ME4932A/ME4932A-G

Dual N-Channel 30-V(D-S) MOSFET

Electrical Characteristics (TA =25℃ Unless Otherwise Specified)

Symbol Parameter Limit Min Typ Max Unit

STATIC

GS=0V, ID=250μA

BVDSS Drain-Source Breakdown Voltage

VGS(th) Gate Threshold Voltage

IGSS Gate Leakage Current VDS=0V, VGS=±20V ±100 nA

IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V 0.1 mA

V

DS=VGS, ID=250μA

V

30 V

1 3 V

RDS(ON)

Drain-Source On-State Resistance

a

VSD Diode Forward Voltage IS=1A, VGS=0V 0.47 0.56 V

DYNAMIC

Qg Total Gate Charge VDS=15V, VGS=10V, ID=11.2A

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

Ciss Input capacitance 865

Coss Output Capacitance 295

Crss Reverse Transfer Capacitance

Rg Gate-Resistance VDS=0V, V

td(on)

tr

td(off)

tf

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

VGS=10V, ID= 11.2A 9.5 12

V

GS=4.5V, ID= 8A 16 22

21

11

5

4.6

15

14

41

4

V

DS=15V, VGS=4.5V, D=11.2A

V

DS=15V, VGS=0V, f=1.0MHz

=0V, f=1MHz 0.6

GS

V

DD=15V, RL =15Ω

I

D=1A, VGEN=10V

R

G=3Ω

153

mΩ

nC

pF

Ω

ns

Notes: a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing.

b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.

ug, 2011-Ver1.0

Jul, 2012-Ver1.3

02

A

Dual N-Channel 30-V(D-S) MOSFET

ME4932A/ME4932A-G

Typical Characteristics (TJ =25℃ Noted)

ug, 2011-Ver1.0

Jul, 2012-Ver1.3

03