Filtronic LP6836P100 User Manual

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Filtronic LP6836P100

Solid State

FEATURES

•

+24.5 dBm Typical Power at 15 GHz

•

12 dB Typical Power Gain at 15 GHz

•

Low Intermodulation Distortion

•

55% Power-Added-Efficiency

•

Color-coded by I

DSS

range

Packaged 0.25W Power PHEMT

GATE

SOURCE

DRAIN

DESCRIPTION AND APPLICATIONS

The LP6836P100 is a packaged Aluminum G allium Ars enide / Indium G allium Ar senide (AlGaAs /InGaAs) Ps eudomorphic
High Electron Mobility Transistor (PHEMT ), utilizing an Electron-Beam direc t-write 0.25 µm by 360 µm Schottky barrier
gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP6836 also features Si
passivation and is available in die form, or P70 packages. Packages are color-coded by I

DSS

range.

3N4

Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, and medium-haul digital radio transmitters.

The LP6836P100 may be procured in a variety of grades, depending upon specific user requirements. Standard lot
screening is patterned after MIL-STD-19500, JANC grade. Space level screening to FSS JANS grade is also available.

PERFORMANCE SPECIFICATIONS (TA = 25°C)

SYMBOLS PARAMETERS MIN TYP MAX UNITS

I

P
G

η

I

G

I
BV
BV

DSS

1dB

1dB

ADD

MAX

V

GSO

M

P

GS

GD

Saturated Drain-Source Current

= 2V VGS = 0V

V

DS

Output Power at 1dB Gain Compression

= 8.0V, IDS = 50% I

V

DS

Power Gain at 1dB Gain Compression

= 8.0V, IDS = 50% I

V

DS

Power-Added Efficiency 55 %
Maximum Drain-Source Current VDS = 2V VGS = +1V 190 mA
Transconductance VDS = 2V VGS = 0V 70 95 mS
Pinch-Off Voltage VDS = 2V IDS = 2mA -0.25 -0.8 -1.5 V
Gate-Source Leakage Current VGS = -5V 1 15
Gate-Source Breakdown Voltage IGS = 2mA -11 -15 V
Gate-Drain Breakdown Voltage IGD = 2mA -12 -16 V

f = 15 GHz 23.5 24.5 dBm

DSS

f = 15 GHz 8.5 9.5 dB

DSS

LP6836-P100-1 Blue
LP6836-P100-2 Green
LP6836-P100-3 Red

80
96

106

90
100
115

95
105
125

mA

µ

A

Get Package Model

Phone:

[phone]

Internet:

DSS-031 WF

http://www.filtronicsolidstate.com

Fax:

[phone]

Filtronic LP6836P100

Solid State

ABSOLUTE MAXIMUM RATINGS

(25°C)

SYMBOL PARAMETER RATING

V

DS

V

GS

I

DS

I

G

P

IN

T

CH

T

STG

P

T

Drain-Source Voltage 10V V
Gate-Source Voltage -4V V
Drain-Source Current 2 x I
Gate Current 18 mA I
RF Input Power 180 mW P
Channel Temperature
Storage Temperature

175°C

-65/175°C

Power Dissipation 1.3W

1

DSS

3,4

Packaged 0.25W Power PHEMT

RECOMMENDED CONTINUOUS

OPERATING LIMITS

SYMBOL PARAMETER RA TING

DS
GS

I

DS

G

IN

T

CH

T

STG

P

T

G

XdB

Drain-Source Voltage 8V
Gate-Source Voltage -0.8V
Drain-Source Current 0.85 x I
Gate Current 3 mA
RF Input Power 90 mW
Channel Temperature
Storage Temperature

150°C

-20/50°C
Power Dissipation 1.1 W
Gain Compression 8 dB

NOTES:

1. Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.

2. Recommended Continuous Operating Limits should be observed for reliable device operation.

3. Power Dissipation defined as: P

≡ (PDC + PIN) - P

T

, where: PDC = DC bias power, P

OUT

= RF output power, and P

OUT

= RF input power.

4. Power Dissipation to be de-rated as follows above 25°C:
Absolute Maximum: P
Recommended Continuous Operating: PT = 1.1W - (9mW/°C) x T

= 1.3W - (9mW/°C) x T

T

HS
HS

where THS = heatsink or ambient temperature.

5. Specifications subject to change without notice.

2

DSS

3,4

IN

HANDLING PRECAUTIONS:

Care should be exercised during handling to avoid damage to the devices. Proper Electrostatic Discharge (ESD)
precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be
treated as Class 1A (0-500V), and further inform ation on ESD control m easures can be f ound in MIL-STD-1686 and MIL­HDBK-263.

APPLICATIONS NOTES AND DESIGN DATA:

Applications Notes are available from your local FSS Sales Repres entative, or directly from the factory. Complete design
data, including S-parameters, Noise data, and Large-Signal models, is available on 3.5” disk ette, or may be down-loaded
from our Web Page.

PACKAGE OUTLINE

(DIMENSIONS IN INCHES)

0.256

0.062

0.098

0.098

0.020
0

0.065

0.024 0.035

0.240

0.335

Get Package Model

DSS-031 WF

Phone:

[phone]

Internet:

http://www.filtronicsolidstate.com

Fax:

[phone]