Fairchild Semiconductor TN6727A Datasheet

TN6727A

TN6727A

PNP General Purpose Amplifier

This device is designed for general purpose medium power amplifiers and switches requiring collector currents to

Absolute Maximum Ratings* T

V
V
V
I

C

T

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics T

P

R
R

C

B

E

1A. Sourced from Process 77. See TN6726A for characteristics.

ParameterSymbol

CES

CBO

EBO

J, Tstg

Symbol

D

θJC

θJA

Total Device Dissipation
Derate above 25°C

TO-226

A = 25°C unless otherwise noted

A = 25°C unless otherwise noted

Characteristic

Value

Max

TN6727A

1
8

Units

V40Collector-Emitter Voltage
V50Collector-Base Voltage
V5Emitter-Base Voltage
A1.5Collector Current - Continuous

°C-55 to +150Operating and Storage Junction Temperature Range

Units

W

mW/°C

°C/W50Thermal Resistance, Junction to Case
°C/W125Thermal Resistance, Junction to Ambient

 1997 Fairchild Semiconductor Corporation

Page 1 of 2

SMALL SIGNAL CHARACTERISTICS

OFF CHARACTERISTICS

PNP General Purpose Amplifier

TN6727A

(continued)

Electrical Characteristics T

BV

CEO

BV

CBO

BV

EBO

I

CBO

I

EBO

ON CHARACTERISTICS*
h

FE

V

CE(sat)

V

BE(on)

Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current

DC Current Gain

Collector-Emitter Saturation Voltage
Base-Emitter On Voltage

A = 25°C unless otherwise noted

IC = 10 mA
IC = 1 mA
IE = 1 mA
VCB = 50 V
VEB = 5 V

IC = 10 mA, VCE = 1 V
IC = 100 mA, VCE = 1 V
IC = 1A, VCE = 1 V

IC = 1 A, IB = 100 mA
IC = 1 A, VCE = 1 V

55
60
50

UnitsMaxMinTest ConditionsParameterSymbol

V40
V50

V5
nA100
nA100

-

250

V0.5

V1.2

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%

C

cb

h

fe

Output Capacitance
Small Signal Current Gain

VCB = 10 V, IE = 0, f = 1MHz
IC = 50 mA,VCE = 10 V, f=20MHz

pF30

-252.5

Page 2 of 2

TO-226AE Tape and Reel Data and Package Dimensions

TO -226AE Packaging
Co nfigu ratio n: Figur e 1.0

FSCINT Label sample

FAIRCHILD SEMICONDUCTOR CORPORAT ION

LOT:

CBVK741B019

NSID:

PN2222N

D/C1:

SPEC REV:

D9842

QA REV:

HTB:B

QTY:

10000

SPEC:

B2

(FSCINT)

F63TNR Label s ample

LOT: CBVK7 41B019

FSID: PN222N

D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:

QTY: 2000

SPEC:

N/F: F (F63TNR)3

TO-226AE TNR/AMMO PACKING INF ROMATION

Packing Styl e Quantity EOL code

Reel A 2,000 D26Z

Amm o M 2,000 D74Z

Unit w eig ht = 0.300gm
Reel weight with com ponents = 0.868 kg
Ammo weight wi th compon ents = 0.880 kg
Max quanti ty per in termediate bo x = 10,000 uni ts

E2,000 D27Z

P2,000 D75Z

(TO-226AE ) BULK PACKING INFORMATION

EOL CODE DESCRIPTION

TO-18 OPTION STD NO LEAD CLIP

J18Z

TO-5 OPTION STD NO LEAD CLIP

J05Z

CODE

TO-226 STANDARD
STRAIGHT

NO EOL

LEADCLIP

DIMENSION

NO LEADCL IP

327mm x 158mm x 135mm

Immed iate Bo x

Cus tom ized
Labe l

QUANTITY

1.0 K / BOX

1.0 K / BOX

1.5 K / BOX

TAPE and REEL OPTION

See Fig 2.0 for various

Reeling Styles

5 Reels per

Int ermed iate Bo x

F63TNR
Labe l

Cus tom ized
Labe l

AMMO PACK OPTION

See Fig 3.0 for 2 Ammo

Pack Options

5 Am mo box es per

Int ermed iate Bo x

F63TNR
Bar code Label

BULK OPTION

See Bulk Packing
Information table

FSCINT Bar code Label

1,500 un its per

EO70 box for

st d option

375mm x 267mm x 375mm

Int ermed iate Bo x

333mm x 231mm x 183mm

Int ermed iate Bo x

Anti-stat ic

Bub ble Sheets

114mm x 102mm x 51mm

EO70 Immedi ate Box

FSCINT
Labe l

Cus tom ized
Labe l

FSCINT
Labe l

Cus tom ized
Labe l

530mm x 130mm x 83mm

Intermediate box

FSCINT Labe l

Cus tomized
Label

7,500 un its m aximu m

per intermedi ate box

for std opt ion

5 EO70 boxes per

Int ermed iate Bo x

October 1999, Rev. A1