Fairchild Semiconductor TN6719A Datasheet
TN6719A
TN6719A
Discrete POWER & Signal
Technologies
C
B
E
TO-226
NPN High Voltage Amplifier
This device is designed for use in high voltage applications .
Sourced from Process 48. See MPSA42 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 300 V
Collector-Base Voltage 300 V
Em i t ter - Bas e V olt ag e 7. 0 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Un i ts
TN6719A
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissipat i on
Derate above 25°C
Thermal Resistance, Junction to Case 125 °C/W
Thermal Resistance, Junction to Ambient 50
1.0
8.0
W
mW/°C
°C/W
NPN High Voltage Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
BE(on)
Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 300 V
Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 300 V
Em i t ter - Bas e B r e akdown Vol tage IE = 1.0 mA, IC = 0 7.0 V
Collector Cutoff Current VCB = 200 V, IE = 0 100 nA
Emitter C utoff Cu rre nt VEB = 6.0 V, IC = 0 100 nA
DC Cu r re nt Ga in VCE = 10 V, IC = 1.0 mA
V
= 10 V, IC = 10 mA
CE
= 10 V, IC = 30 mA
V
Collector-Emitter Saturation Voltage IC = 30 mA, IB = 3.0 mA 0.75 V
)
CE
25
40
40 200
Base- Emi tt er O n V oltage VCE = 10 V, IC = 30 mA 0.85 V
TN6719A
SMALL SIGNAL CHARACTERISTICS
C
cb
h
fe
Collector-Base Capacitance VCB = 20 V, f = 1.0 MHz 3.5 pF
Small-Signal Current Gain IC = 15 mA, VCE = 100 V,
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 20 MHz
1.5 15
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