Fairchild Semiconductor TN6718A Datasheet
TN6718A
TN6718A
C
B
E
TO-226
NPN General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents
to 1.0A. Sourced from Process 39. See TN6717A for characteristics.
Absolute Maximum Ratings* T
ParameterSymbol
V
CEO
V
CBO
V
EBO
I
C
T
J, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
A = 25°C unless otherwise noted
Value
Units
V100Collector-Emitter Voltage
V100Collector-Base Voltage
V5Emitter-Base Voltage
A1.2Collector Current - Continuous
°C-55 to +150Operating and Storage Junction Temperature Range
Thermal Characteristics T
P
R
R
1997 Fairchild Semiconductor
tn6718a.lwp Rev A
Symbol
D
θJC
θJA
Characteristic
Total Device Dissipation
Derate above 25°C
A = 25°C unless otherwise noted
Max
TN6718A
1
8
Units
W
mW/°C
°C/W50Thermal Resistance, Junction to Case
°C/W125Thermal Resistance, Junction to Ambient
SMALL SIGNAL CHARACTERISTICS
OFF CHARACTERISTICS
NPN General Purpose Amplifier
TN6718A
(continued)
Electrical Characteristics T
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
CE(sat)
V
BE(on)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
A = 25°C unless otherwise noted
IC = 10 mA
IC = 100 µA
IE = 100 µA
VCB =80 V
VEB = 5 V
IC = 50 mA, VCE = 1 V
IC = 250 mA, VCE = 1 V
IC = 500 mA, VCE = 1 V
IC = 250 mA, IB = 10 mA
IC = 250 mA, IB = 25 mA
IC = 250 mA, VCE = 1 V
80
50
20
UnitsMaxMinTest ConditionsParameterSymbol
V100
V100
V5
nA100
uA10
-
250
V0.5
0.35
V1.2
C
h
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
cb
fe
Output Capacitance
Small Signal Current Gain
VCB = 10 V, IE = 0, f = 1MHz
IC = 200 mA, VCE = 5 V, f=20MHz
2.5
25
pF30
-
1997 Fairchild Semiconductor
tn6718a.lwp Rev A
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