Fairchild Semiconductor TN6716A Datasheet

TN6716A

C

B

E

TO-226

NPN General Purpose Amplifier

This device is designed for general purpose medium power amplifiers and switches requiring collector currents to

1.2A. Sourced from Process 38. See TN6715A for characteristics.

Absolute Maximum Ratings* T

ParameterSymbol

V

CEO

V

CBO

V

EBO

I

C

T

J, Tstg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

A = 25°C unless otherwise noted

Value

Units

V60Collector-Emitter Voltage V60Collector-Base Voltage V5Emitter-Base Voltage A2Collector Current - Continuous

°C-55 to +150Operating and Storage Junction Temperature Range

Thermal Characteristics T

Symbol

P

D

R

θJC

R

θJA

 1997 Fairchild Semiconductor

Characteristic

Total Device Dissipation Derate above 25°C

A = 25°C unless otherwise noted

Max

TA=25°C

1 8

Units

W

mW/°C

°C/W50Thermal Resistance, Junction to Case °C/W125Thermal Resistance, Junction to Ambient

Pr38 TN6716A.SAM revC

SMALL SIGNAL CHARACTERISTICS

OFF CHARACTERISTICS

NPN General Purpose Amplifier

TN6716A

(continued)

Electrical Characteristics T

BV

CEO

BV

CBO

BV

EBO

I

CBO

I

EBO

ON CHARACTERISTICS

h

FE

V

CE(sat)

V

BE(on)

Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

A = 25°C unless otherwise noted

IC = 1 mA IC = 100 µA IE = 1 mA VCB = 40 V VEB = 5 V

IC = 50 mA, VCE = 1 V IC = 250 mA, VCE = 1 V IC = 500 mA, VCE = 1 V

IC = 250 mA, IB = 10 mA IC = 250 mA, IB = 25 mA

IC = 250 mA, VCE = 1.0 V

80 50 20

UnitsMaxMinTest ConditionsParameterSymbol

V60 V60

V5 nA100 uA10

-

250

V0.5

0.35 V1.2

C

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%

cb

Output Capacitance Small Signal Current Gainhfe

VCB = 10 V, IE = 0, f = 1MHz IC = 200 mA,VCE = 5 V,f=20MHz

pF30

MHz252.5

 1997 Fairchild Semiconductor

Pr38 TN6716A.SAM revC

TO-226AE Tape and Reel Data and Package Dimensions

TO -226AE Packaging Co nfigu ratio n: Figur e 1.0

FSCINT Label sample

FAIRCHILD SEMICONDUCTOR CORPORAT ION

LOT:

CBVK741B019

NSID:

PN2222N

D/C1:

SPEC REV:

D9842

QA REV:

HTB:B

QTY:

10000

SPEC:

B2

(FSCINT)

F63TNR Label s ample

LOT: CBVK7 41B019

FSID: PN222N

D/C1: D9842 QTY1: SPEC REV: D/C2: QTY2: CPN:

QTY: 2000

SPEC:

N/F: F (F63TNR)3

TO-226AE TNR/AMMO PACKING INF ROMATION

Packing Styl e Quantity EOL code

Reel A 2,000 D26Z

Amm o M 2,000 D74Z

Unit w eig ht = 0.300gm Reel weight with com ponents = 0.868 kg Ammo weight wi th compon ents = 0.880 kg Max quanti ty per in termediate bo x = 10,000 uni ts

E2,000 D27Z

P2,000 D75Z

(TO-226AE ) BULK PACKING INFORMATION

EOL CODE DESCRIPTION

TO-18 OPTION STD NO LEAD CLIP

J18Z

TO-5 OPTION STD NO LEAD CLIP

J05Z

CODE

TO-226 STANDARD STRAIGHT

NO EOL

LEADCLIP

DIMENSION

NO LEADCL IP

327mm x 158mm x 135mm

Immed iate Bo x

Cus tom ized Labe l

QUANTITY

1.0 K / BOX

1.5 K / BOX

TAPE and REEL OPTION

See Fig 2.0 for various

Reeling Styles

5 Reels per

Int ermed iate Bo x

F63TNR Labe l

Cus tom ized Labe l

AMMO PACK OPTION

See Fig 3.0 for 2 Ammo

Pack Options

5 Am mo box es per

Int ermed iate Bo x

F63TNR Bar code Label

BULK OPTION

See Bulk Packing Information table

FSCINT Bar code Label

1,500 un its per

EO70 box for

st d option

375mm x 267mm x 375mm

Int ermed iate Bo x

333mm x 231mm x 183mm

Int ermed iate Bo x

Anti-stat ic

Bub ble Sheets

114mm x 102mm x 51mm

EO70 Immedi ate Box

FSCINT Labe l

Cus tom ized Labe l

FSCINT Labe l

Cus tom ized Labe l

530mm x 130mm x 83mm

Intermediate box

FSCINT Labe l

Cus tomized Label

7,500 un its m aximu m

per intermedi ate box

for std opt ion

5 EO70 boxes per

Int ermed iate Bo x

October 1999, Rev. A1