Fairchild Semiconductor TN6705A Datasheet
TN6705A
TN6705A
Discrete POWER & Signal
Technologies
C
B
E
TO-226
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 1.2 A. Sourced from
Process 38. See TN6715A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 45 V
Collector-Base Voltage 60 V
Em i t ter - Bas e V olt ag e 5. 0 V
Collector Current - Continuous 1.5 A
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
TN6705a
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 125 °C/W
Thermal Resistance, Junction to Ambient 50
1.0
8.0
W
mW/°C
°C/W
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
BE(on)
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 45 V
Collector-Base Breakdown Voltage IC = 100 mA, IE = 0 60 V
Em i t ter - Bas e B r e akdown Vol tage IE = 1.0 mA, IC = 0 5.0 V
Collector Cutoff Current VCB = 60 V, IE = 0 0.1
Emit ter Cutoff C u rre nt VEB = 5.0 V, IC = 0 0.1
DC Cu r re n t Ga in VCE = 2.0 V, IC = 50 mA
V
= 2.0 V, IC = 250 mA
CE
= 2.0 V, IC = 500 mA
V
Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA
)
CE
= 1.0 A, IB = 100 mA
I
C
40
40
25
Base-Emitter On Voltage VCE = 2.0 V, IC = 1.0 A 1.5 V
250
0.5
1.0
µ
A
µ
A
V
V
TN6705A
SMALL SIGNAL CHARACTERISTICS
C
cb
h
fe
Collector-Base Capacitance VCB = 10 V, f = 1.0 MHz 30 pF
Small-Signal Current Gain IC = 50 mA, VCE = 5.0 V,
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 20 MHz
2.5 20
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