Fairchild Semiconductor TN5415A Datasheet
TN5415A
TN5415A
Discrete POWER & Signal
Technologies
C
B
E
TO-226
PNP High Voltage Amplifier
This device is designed for use as high voltage drivers requiring
collector currents to 100 mA. Sourced from Process 76. See
MPSA92 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 200 V
Collector-Base Voltage 200 V
Em i t ter - Bas e V olt ag e 4. 0 V
Collector Current - Continuous 100 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
TN5415A
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 125 °C/W
Thermal Resistance, Junction to Ambient 50
1.0
8.0
W
mW/°C
°C/W
PNP High Voltage Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEX
I
CEO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
BE(on)
Collector-Emitter Breakdown Voltage* IC = 50 mA, IB = 0 200 V
C oll ec t or -Base Breakd ow n Volt age IC = 100 µA, IE = 0 20 0 V
Em i t ter - Bas e B r e akdown Vol tage
= 100 µA, IC = 0
I
E
4.0 V
Colle c tor Cu tof f Cu r ren t VCB = 175 V 50
Colle c tor Cu tof f Cu r ren t VCE = 200 V, VBE = 1.5 V (rev) 50
Colle c tor Cu tof f Cu r ren t VCE = 150 V 50
Emitte r Cutoff Cur rent VEB = 4.0 V, IC = 0 20
DC Cu r rent Gain VCE = 10 V, IC = 50 mA 30 150
Collector-Emitter Saturation Voltage IC = 50 mA, IB = 5.0 mA 2.5 V
)
Base- Emi tt er O n V oltage IC = 50 mA, VCE = 10 V 1.5 V
µ
A
µ
A
µ
A
µ
A
TN5415A
SMALL SIGNAL CHARACTERISTICS
C
C
h
Re
IS /
ob
ib
fe
(hie)
b
Output Capacitance VCB = 10 V, f = 1.0 MHz 15 pF
Input Capacitance VEB = 5.0 V, f = 1.0 MHz 75 pF
Small-Signal Current Gain IC = 5.0 mA, VCE = 10 V,
Input Resi sta nce VCE = 10 V, IC = 5.0 mA 300 Ω
Safe Operating Area VCE = 100 V, t = 100 mS 100 mA
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 5. 0 MHz
= 5.0 mA, VCE = 10 V,
I
C
f = 1. 0 kHz
3.0
25
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