Fairchild Semiconductor TN4033A Datasheet
TN4033A
TN4033A
Discrete POWER & Signal
Technologies
C
B
E
TO-226
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at currents to 500 mA and collector voltages up to 70V.
Sourced from Process 67.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 80 V
Collector-Base Voltage 80 V
Em i t ter - Bas e V olt ag e 5. 0 V
Collector Current - Continuous 1.0 A
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
TN4033A
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 125 °C/W
Thermal Resistance, Junction to Ambient 50
1.0
8.0
W
mW/°C
°C/W
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
sat
BE(
V
BE(on)
Collector-Emitter Sustaining Voltage* IC = 10 mA, IB = 080V
C oll ec t or -Base Breakd ow n Volt age IC = 10 µA, IE = 0 80 V
Em i t ter - Bas e B r e akdown Vol tage
= 10 µA, IC = 0
I
E
5.0 V
Collector-Cutoff Current VCB = 60 V, IE = 0
= 60 V, IE = 0, TA = 150°C
V
CB
Em i t ter - Cutoff C u r rent VEB = 5.0 V, IC = 0 10
DC Cu r re n t Ga in
= 100 µA, VCE = 5.0 V
I
C
I
=100mA, VCE=5.0V,TA = -55°C
C
= 100 mA, VCE = 5.0 V
I
C
IC = 500 mA, VCE = 5.0 V
= 1.0 A, VCE = 5.0 V
I
Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA
)
Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA 0.9 V
)
C
= 500 mA, IB = 50 mA
I
C
75
40
100
70
25
Base-Emitter On Voltage IC = 500 mA, VCE = 0.5 V 1.1 V
50
50
300
0.15
0.5
nA
µ
µ
V
V
TN4033A
A
A
SMALL SIGNAL CHARACTERISTICS
C
obo
C
ibo
h
fe
Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 20 pF
Input Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 110 pF
Small-Signal Current Gain IC = 50 mA, VCE = 10 V,
SWITCHING CHARACTERISTICS
t
s
t
on
t
f
St or age Tim e IC = 500 mA, IB1 = IB2 = 50 mA 350 ns
Turn-On Time IC = 500 mA, IB1 = 50 mA 100 ns
Fall Time IC = 500 mA, IB1 = IB2 = 50 mA 50 ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
f = 10 0 M Hz
1.0 4.0
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