Fairchild Semiconductor TN3019A Datasheet
TN3019A
TN3019A
Discrete POWER & Signal
Technologies
C
B
E
TO-226
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 500 mA
and collector voltages up to 80 V. Sourced from Process 12.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 80 V
Collector-Base Voltage 140 V
Em i t ter- Base Voltage 7. 0 V
Col l ector Cur re nt - Cont inuous 1.0 A
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
TN3019A
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip ation
Derate above 25°C
Thermal Resistance, Junction to Case 125
Thermal Resistance, Junction to Ambient 50 °C/W
1.0
8.0
W
mW/°C
°C/W
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitter Breakdown Voltage* IC = 30 mA, IB = 080V
C oll ector -Base Br eakdow n Voltag e IC = 100 µA, IE = 0 140 V
Em i t ter- Base Br eakdow n V oltage
Collector-Cutoff Current VCB = 90 V, I
Em i t ter- Cut off Current VEB = 5.0 V, I
= 100 µA, IC = 0
I
E
= 0
= 90 V, IE = 0, TA = 150°C
V
CB
E
= 0 0.01
C
DC Cu r re n t Gain IC = 0.1 m A, VCE = 10 V
I
= 10 mA, VCE = 10 V
C
= 150 mA, VCE = 10 V
I
C
=150 mA, VCE=10 V,TA= -55°C
I
C
= 500 mA, VCE = 10 V*
I
C
= 1.0 A, VCE = 10 V*
I
Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA
)
Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 1.1 V
)
C
= 500 mA, IB = 50 mA
I
C
7.0 V
0.01
10
50
90
100
300
40
50
15
0.2
0.5
µ
A
µ
A
µ
A
V
V
TN3019A
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
h
fe
rb’C
c
NF Noise Figure IC = 100 mA, VCE = 10 V,
Current Gain - Bandwidth Product IC = 50 mA, VCE = 10 V,
f = 20 MHz
Output Capacitan ce VCB = 10 V, IE = 0, f = 1.0 MHz 12 pF
Input Capacitance VBE = 0.5 V, IC = 0, f = 1.0 MHz 60 pF
Small-Signal Current Gain IC = 1.0 m A, VCE = 5.0 V,
f = 1. 0 MHz
Collector Base Time Constant IE = 10 mA, VCB = 10 V,
f = 4. 0 MHz
RS = 1.0 kΩ, f = 1.0 kHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
100 MHz
80 400
400 pS
4.0 dB
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