Fairchild Semiconductor SS29, SS28, SS23, SS26 Datasheet

Features

• Glass passivated junctions.

• High current capability, low V

• For use in low voltage, high

frequency inverters free
wheeling, and polarity
protection applications.

SS22-S210

Discrete POWER & Signal

Technologies

SS22 - S210

0.185 (4.699)

0.083 (2.108)

0.075 (1.905

.

F

SMB/DO-214AA

COLOR BAND DENOTES CATHODE

0.160 (4.064)

)

2

0.220 (5.588)

0.200 (5.080)

1

0.155 (3.937)

0.130 (3.302)

0.096 (2.438)

0.083 (2.108)

0.050 (1.270)

0.030 (0.762)

0.008 (0.203)

0.004 (0.102)

0.012 (0.305)

0.006 (0.152)

2.0 Ampere Schottky Barrier Rectifiers

Absolute Maximum Ratings* T

Symbol Parameter Value Units

I

O

i

f(surge)

P

D

R

θ

JA

T

stg

T

J

Average Rectified Current

.375 " lead length @ T

Peak Forward Surge Current

8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient ** 75
Storage Temperature Range -65 to +150
Operating Junction Temperature -65 to +125

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.

Electrical Characteristics T

Parameter Device Units

22 23 24 25 26 28 29 210

Peak Repetitive Reverse Volt age 20 30 40 50 60 80 90 100 V
Maximum RMS Voltage 14 21 28 35 42 56 64 80 V
DC Reverse Voltage (Rated VR)
Maximum Reverse Current TA = 25°C

(Note 1)

@ rated V

R

TA = 100°C

Maximum Forward Voltage @ 2.0 A 500 700 850 mV

Note: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

20 30 40 50 60 80 90 100 V

= 25°C unless otherwise noted

A

= 75°C

A

= 25°C unless otherwise noted

A

0.4
10

2.0 A

50 A

1.3
13

mW/°C

°

C/W

W

°

C

°

C

mA
mA

1998 Fairchild Semiconductor Corporation

SS22-S210, Rev. A

T ypical Characteristics

SS22-S210

Schottky Barrier Rectifiers

(continued)

Forward Current De ratin g Curve

2

1.5

SINGLE PHASE

1

HALF WAVE
60Hz
RESISTIVE OR
INDUCTIVE LOAD

0.5

P.C.B. MOUNTED

FORWAR D CU RRENT (A )

ON 8.0x 8.0mm
COPPER PAD AREAS

0

50 60 70 80 90 100 110 120 130 140 150

LEAD TEMPERATURE ( C)

º

Reverse Characteris tics

10

º

T = 100 C

SS22-24

1

0.1

0.01

REVERSE CURRENT (mA)

A

º

T = 75 C

A

T = 25 C

º

A

SS25-S210

Forward Characteristics

50

T = 25 C

º

A

f = 1.0 MHz

20

Vsig = 50mVp- p

10

SS22-24

5

1

SS28 - S210

SS25-26

FORWARD CUR RENT (A)

0.1

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1

FORWARD VOLTAGE (V)

Junction Capacitance

500

SS22-24

200

100

50

CAPACITANCE (p F)

20

º

T = 25 C

A

f = 1.0 MHz
Vsig = 50mVp-p

SS25-S210

0.001
0 20406080100120140

NORM ALIZED REV ERSE VO LTAGE (%)

Non-Repetitive Surge Current

60

50

40

30

20

10

FORWARD SURGE CURRENT (A)

0

12 51020 50100

10

0.1 0.5 1 5 10 20 50 100

8.3ms Singl e Half Sine -W a ve

JEDEC Method

NUMBER OF CYC LES AT 60Hz

REVERSE VOLTAGE (V)

SS22-S210, Rev. A