Fairchild Semiconductor SMBJ13A100 Datasheet
Transient Voltage Suppressor
Features
•
Glass passivated junction.
• 600W Peak Pulse Power capability on
10/1000 µs waveform.
• Excellent clamping capability.
• Low incremental surge resistance.
• Fast response time; typically less
than 1.0 ps from 0 volts to BV for
unidirectional and 5.0 ns for
bidirectional.
• Typical I
less than 1.0 µA above 10V .
R
SMBJ13A100
Top
Marking
LG.
SMB/DO-214AA
COLOR BAND DENOTES CATHODE
ON UNIDIRECTIONAL DEVICES ONLY.
NO COLOR BAND ON BIDIRECTIONAL
DEVICES.
SMBJ13A100
DEVICES FOR BIPOLAR APPLICA TIONS
- Bidirectional types use CA suffix.
- Electrical Characteristics apply in both directions.
600 Watt Transient Voltage Suppressor
Absolute Maximum Ratings* T
Symbol
P
PPM
I
PPM
I
Non-repetitive Peak Forward Surge Current
FSM
T
stg
TJ
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Note 1: Measured on 8.3 ms single half-sine wave or equivalent square wave; Duty cycle = 4 pulses per minute maximum.
Peak Pulse Power Dissipation on 10/1000 µs waveform
Peak Pulse Current on 10/1000 µs wavefo rm
superimposed on rated load (JEDEC method)
Storage Temperature Range -55 to +150
Opera ting Junction Temperature + 150
Parameter
Electrical Characteristics T
Uni-directional
Device
min max
SMCJ13A100 LG. 13 14.4 15.9 1 21.5 27.9 100
* Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices.
** For bidirectional parts with V
2002 Fairchild Semiconductor Corporation
Part
Marking*
Reverse
Stand-off
Voltage
V
(V)
RWM
<10V, the IR max limit is doubled.
RWM
= 25°C unless otherwise noted
A
= 25°C unless otherwise noted
A
Breakdown
Voltage
(V)
V
BR
(Note 1)
Test
Current
IT (mA)
Value
Units
minimum 600 W
see table A
100 A
°
C
°C
Clamping
Voltage
@I
PPM
VC (V)
Peak Pulse
Current
(A)
I
PPM
Reverse
Leakage
@ V
I
SMBJ13A100, Rev. A
(nA)**
R
RWM
T ypical Characteristics
SMBJ13A100
Transient Voltage Suppressor
(continued)
Peak Pul s e Po wer Rating Curve
100
T = 25 C
º
A
10
1
PULS E POWER (kW)
0.1
0.0001 0.001 0.01 0.1 1 10
PULSE WIDTH (ms)
Pulse Waveform
150
tf = 10µµµµsec
Peak Value
Ippm
100
50
PEAK PULSE CURRENT (%)
td
0
01234
T = 25 C
º
A
Pulse Width (td) is Defined
as th e Point Where the Pe ak
Current Decays to 50% of Ipp
Half Value-Ipp
2
µµµµ
10/1000
sec Wavefo rm
as Defined by R.E.A.
e-kt
TIME (ms)
Pulse Derating Curve
100
75
50
PULSE POW ER (%)
25
0
0 25 50 75 100 125 150 175 200
AMBIENT TEMPERATURE ( C)
º
Junctio n Capa citan ce
6000
4000
2000
1000
500
200
100
CAPACITANCE (pF)
50
Meas ured at
Stand -Off
Voltage (V mw)
20
10
1 5 10 50 100 200
REV ERSE VOLTAGE (V)
T = 25 C
A
f = 1.0 MHz
Visg = 50m Vp-p
Meas ured at
Zero Bias
º
Non-Repetitive Surge Current
200
100
50
20
FORWARD SURGE CUR R E NT (A )
10
12 51020 50100
NUMBER O F CYC LES AT 60Hz
T = T max
A
A
8.3ms Sin g le Half Si n e -Wav e
JEDEC Method
SMBJ13A100, Rev. A
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