Fairchild Semiconductor SL5500, SL5501, SL5511 Datasheet
6-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
SL5500 SL5501 SL5504 SL5511
PACKAGE
ANODE
6
1
6
CATHODE
1
SCHEMATIC
1
2
3
6
BASE
5COL
4EMITTER
6
1
DESCRIPTION
The SL5500, SL5501, SL5504 and SL5511 are optically coupled isolators each consisting of an infrared emitting GaAs diode and
a silicon NPN phototransistor with accessible base. These devices are housed in 6-pin dual-in-line packages (DIP).
FEATURES
• High output/input DC current transfer ratio
•Low saturation voltage
• High isolation voltage of 5.3 kV RMS
• UL recognized (File # E90700)
• VDE recognized (File # 94766)
- Ordering option ‘300’ (e.g. SL5500.300)
APPLICATIONS
•Power supply regulators
• Digital logic inputs
• Microprocessor inputs
• Appliance sensor systems
• Industrial controls
© 2003 Fairchild Semiconductor Corporation
Page 1 of 10
6/30/03
6-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
SL5500 SL5501 SL5504 SL5511
Parameters Symbol Value Units
TOTAL DEVICE
Storage Temperature T
Operating Temperature T
Lead Solder Temperature T
Total Power Dissipation at T
= 25°C Ambient
A
Derate Linearly from 25°C 3.3 mW/°C
STG
OPR
SOL
P
D
EMITTER
Continuous Reverse Voltage V
Continuous Forward Current I
Forward Current - Peak (10 µs pulse, δ = 0.01) I
Total Power Dissipation T
= 25°C Ambient
A
Derate Linearly from 25°C 2.0 mW/°C
R
F
(pk) 3.0 A
F
P
D
DETECTOR
Collector to Emitter Voltage (open base)
Collector to Base Voltage (open emitter)
Emitter to Collector Voltage (open base) V
Emitter to Base Voltage (open colletor) V
DC Collector Current I
Detector Power Dissipation @ T
= 25°C Ambient
A
Derate Linearly from 25°C 2.0 mW/°C
SL5500, SL5501, SL5511
SL5504 80
SL5500, SL5501, SL5511
SL5504 120
V
V
CEO
CBO
ECO
EBO
C
P
D
-55 to +150 °C
-55 to +100 °C
260 for 10 sec °C
260 mW
3V
100 mA
150 mW
30
70
V
V
7V
7V
100 mA
150 mW
© 2003 Fairchild Semiconductor Corporation
Page 2 of 10
6/30/03
Ω
6-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
SL5500 SL5501 SL5504 SL5511
ELECTRICAL CHARACTERISTICS
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameters Test Conditions Symbol Device Min Typ* Max Units
EMITTER
Input Forward Voltage
Reverse Current V
DETECTOR
Leakage Current
Collector to Emitter
Breakdown Voltage
Collector to Emitter I
Collector to Base I
Emitter to Collector I
Emitter to Base I
= 20 mA, T
I
F
= 2 mA 1.10 1.2 V
I
F
= 3 V, T
R
V
= 10 V
CE
V
= 30 V 0.005 10 µA
CE
V
= 10 V, T
CE
= 30 V I
V
CB
= 10 µA, I
C
= 10 µA, I
C
= 10 µA, I
E
= 10 µA, I
E
= 25 to 70°C
A
= 25 to 70°C I
A
= 70°C 500 nA
A
= 0 BV
F
= 0 BV
F
= 0 BV
F
= 0 BV
F
(T
= 25°C Unless otherwise specified.)
A
V
I
CEO
CBO
F
R
All
All 0.001 10 µA
All
SL5500, SL5501, SL5511 30 100 V
CEO
SL5504 80 110
SL5500, SL5501, SL5511 30 120 V
CBO
ECO
EBO
SL5504 120 150
All 7 10 V
All 7 10 V
1.23 1.3 V
150nA
0.001 50 µA
ISOLATION CHARACTERISTICS
Characteristic Test Conditions Symbol Min Typ* Max Units
Input-Output Isolation Voltage (note 1) f = 60Hz, T = 1 min. V
Isolation Resistance V
= ±500 VDC R
I-O
Isolation Capacitance f = 1 MHz, V = 0V C
*Typical values at T
© 2003 Fairchild Semiconductor Corporation
= 25°C
A
Page 3 of 10
ISO
ISO
ISO
5300 V
AC(RMS)
110 T
0.6 1.3 pF
6/30/03
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