Fairchild Semiconductor Si9933ADY Datasheet

Si9933ADY

Si9933ADY

Dual P-Channel PowerTrench MOSFET

January 200 1

General Description

This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage

Features

• –5 A, –20 V, R
R

R

= 75 m Ω @ VGS = –4.5 V

DS(ON)

= 105 m Ω @ VGS = –3.0 V

DS(ON)

= 115 mΩ @ VGS = –2.7 V

DS(ON)

(2.5V – 12V).

• Extended V

range (±12V) for battery applications

GSS

Applications

• Load switch

• Motor drive

• DC/DC conversion

• Power management

Absolute Maximum Ratings T

=25oC unless otherwise noted

A

• Low gate charge

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

5

Q1

6
7

Q2

8

4
3
2
1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (Note 1a)

– Pulsed
Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b)

(Note 1c)

Operating and Storage Junction Temperature Range –55 to +175 °C

–20
±12

–3.4

–16

1

0.9

V
V
A

W

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

9933A Si9933ADY 13’’ 12mm 2500 units

2001 Fairchild Semiconductor International Si9933ADY Rev A(W)

Electrical Characteristics T

Si9933ADY

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

∆BVDSS
∆T

J

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse

VGS = 0 V, ID = –250 µA –20 V
ID = –250 µA, Referenced to 25°C –12 mV/°C

VDS = –16 V, VGS = 0 V –1 µA
VGS = –12 V, VDS = 0 V –100 nA
VGS = 12 V, VDS = 0 V 100 nA

On Characteristics (Note 2)

V

GS(th)

∆VGS( th)
∆T

J

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage
Gate Threshold Voltage

VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C

Temperature Coefficient
Static Drain–Source

On–Resistance

VGS = –4.5 V, ID = –3.2 A
VGS = –3.0 V, ID = –2.0 A
VGS = –2.7 V, ID = –1.0 A

On–State Drain Current

VGS = –4.5 V, VDS = –5 V –16 A

Forward Transconductance VDS = –9 V, ID = –3.4 A 8 S

–0.8 –1.0 –1.5 V

3

44
64
72

75
105
115

mV/°C

m Ω

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 825 pF
Output Capacitance 420 pF
Reverse Transfer Capacitance

VDS = –10 V, V
f = 1.0 MHz

GS

= 0 V,

150 pF

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)
r
d(off)
f

g
gs
gd

Turn–On Delay Time 16 40 ns
Turn–On Rise Time 46 80 ns
Turn–Off Delay Time 40 70 ns
Turn–Off Fall Time
Total Gate Charge 10 20 nC
Gate–Source Charge 2.1 nC
Gate–Drain Charge

VDD = –6 V, ID = –1 A,
VGS = –4.5 V, R

GEN

= 6 Ω

VDS = –6 V, ID = –3.2 A,
VGS = –4.5 V

25 40 ns

3.3 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward

VGS = 0 V, IS = –2.0 A (Note 2) –0.7 1.2 V

Voltage

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

is guaranteed by design while R

θJC

a) 78°C/W when

mounted on a

0.5in2 pad of 2
oz copper

is determined by the user's board design.

θCA

b) 125°C/W when

mounted on a

0.02 in2 pad of
2 oz copper

–2.0

c) 135°C/W when

mounted on a
minimum pad.

A

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

Si9933ADY Rev A(W)