Fairchild Semiconductor SI9426DY Datasheet
SI9426DY
Single N-Channel, 2.5V Specified MOSFET
SI9426DY
January 2001
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s high cell density
DMOS technology process that has been especially
tailored to minimize on-state resistance and yet
maintain low gate charge for superior switching
performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint package.
Features
• 10.5 A, 20 V. R
• High cell density for extremely low R
• High power and current handling capability in a widely
used surface mount package
= 13.5 mΩ @ VGS = 4.5 V
DS(ON)
R
= 16 mΩ @ VGS = 2.7 V
DS(ON)
DS(ON)
Applications
• DC/DC converter
• Load switch
D
D
D
D
G
S
SO-8
S
S
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 20 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) 10.5 A
– Pulsed 30
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range -55 to +150
±8
1.2
1
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Case (Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
9426 SI9426DY 13’’ 12mm 2500 units
2001 Fairchild Semiconductor International
°C/W
°C/W
SI9426DY Rev A (W)
SI9426DY
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
I
DSS
I
GSSF
I
GSSR
DSS
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
= 0 V, ID = 250µA
V
GS
= 16 V, VGS = 0 V
V
DS
V
= 16 V, VGS = 0 V, TJ=55°C
DS
Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA
20 V
1
10
On Characteristics (Note 2)
V
R
I
g
D(on)
GS(th)
DS(on)
FS
V
= VGS, ID = 250 µA
Gate Threshold Voltage
Static Drain–Source
On–Resistance
DS
= VGS, ID = 250 µA,TJ=125°C
V
DS
VGS = 4.5 V, ID = 10.5 A
= 4.5 V,ID = 10.5 A,TJ=125°C
V
GS
=2.7 V, ID = 10 A
V
GS
On–State Drain Current VGS = 4.5 V, VDS = 5 V 30 A
Forward Transconductance VDS = 5 V, ID = 10.5 A 43 S
0.4
0.3
0.6
0.5
12
17
14
1.5
0.8
13.5
24
16
mΩ
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 2150 pF
Output Capacitance 890 pF
Reverse Transfer Capacitance
= 10 V, V
V
DS
f = 1.0 MHz
GS
= 0 V,
165 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 11 30 ns
Turn–On Rise Time 26 55 ns
= 5 V, ID = 1 A,
V
DS
= 4.5 V, R
V
GS
GEN
= 6 Ω
Turn–Off Delay Time 145 220 ns
Turn–Off Fall Time
Total Gate Charge 43 60 nC
Gate–Source Charge 7 nC
V
= 10 V, ID = 10.5 A,
DS
= 4.5 V
V
GS
Gate–Drain Charge
40 100 ns
8nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Maximum Continuous Drain–Source Diode Forward Current 2.1 A
Drain–Source Diode Forward
VGS = 0 V, IS = 2.1 A (Note 2) 0.6 1.2 V
Voltage
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
µA
V
a) 50°C/W when
mounted on a 1 in
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2
b) 105°C/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 125°C/W when mounted on a
minimum pad.
SI9426DY Rev A (W)
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