Fairchild Semiconductor SI9424DY Datasheet
Si9424DY
Single P-Channel 2.5V Specified PowerTrench MOSFET
Si9424DY
January 2001
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
•DC/DC converter
•Load switch
•Battery Protection
D
D
D
D
G
S
SO-8
Absolute Maximum Ratings
S
S
TA = 25°C unless otherwise noted
Features
•-8.0 A, -20 V. R
R
= 0.024 Ω @ V
DS(on)
= 0.032 Ω @ V
DS(on)
= -4.5 V
GS
= -2.5 V.
GS
•Low gate charge (23nC typical).
•Fast switching speed.
• High performance trench technology for extremely
low R
DS(ON)
.
•High power and current handling capability.
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage -20 V
Gate-Source Voltage
Drain Current - Continuous
- Pulsed -50
Power Dissipation for Single Operati on
Operating and Storage Junction Temperature Range -55 to +150
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
±10 V
-8.0 A
2.5 W
1.2
1
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, Junction-to-Ambi ent
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
9424 Si9424DY 13’’ 12mm 2500 units
2001 Fairchild Semiconductor International
C
°
C/W
°
C/W
°
Si9424DY Rev.A
Si9424DY
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min TypMaxUnits
Off Characteristics
BV
DSS
BV
∆
T
∆
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
GS(th)
V
∆
T
∆
R
DS(on)
I
D(on)
g
FS
Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA-20 V
Breakdown Voltage Temperature
DSS
Coefficient
J
ID = -250 µA, Referenced to 25°C-24mV/
Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1
Gate-Body Leakage Current, Forward VGS = 10 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -10 V, VDS = 0 V -100 nA
(Note 2)
Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.4 -0.8 -1.5 V
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain-Source
On-Resistance
ID = -250 µA, Referenced to 25°C5mV/
VGS = -4.5 V, ID = -8 A
V
= -4.5 V, ID = -8 A ,TJ=125°C
GS
V
= -2.5 V, ID = -7 A
GS
0.019
0.026
0.027
0.024
0.039
0.032
On-State Drain Current VGS = -4.5 V, VDS = -5.0 V -50 A
Forward Transconductance VDS = -5 V, ID = -8 A 28 S
A
µ
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 2260 pF
Output Capacitance 500 pF
Reverse Transfer Capacitance
= -10 V, VGS = 0 V,
V
DS
f = 1.0 MHz
205 pF
C
°
C
°
(Note 2)
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time 8 16 ns
Turn-On Rise Time 15 27 ns
Turn-Off Delay Time 98 135 ns
Turn-Off Fall Time
Total Gate Charge 23 33 nC
Gate-Source Charge 5.5 nC
Gate-Drain Charge
V
= -10 V, ID = -1 A,
DD
V
= -4.5 V, R
GS
= -10 V, ID = -8 A,
V
DS
V
= -5 V,
GS
GEN
= 6
Ω
35 55 ns
4nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1: R
θJA
drain pins. R
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current -2. 1 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
is guaranteed by design while R
θJC
a) 50° C/W when
mounted on a 0.5 in
pad of 2 oz. copper.
is determined by the user's board design.
θJA
2
b) 105° C/W when
mounted on a 0.02 in
pad of 2 oz. copper.
(Note 2)
2
-0.75 -1.2 V
c) 125° C/W when
mounted on a 0.003 in
pad of 2 oz. copper.
2
Si9424DY Rev.A