Fairchild Semiconductor SI6963DQ Datasheet

Si6963DQ

Dual P-Channel 2.5V Specified PowerTrench



MOSFET

Si6963DQ

April 2001

General Description

This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been opt imized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).

Applications

• Load switch

• Motor drive

• DC/DC conversion

• Power management

G

2

S

2

S

2

D

2

G

1

S

1

S

1

D

1

TSSOP-8

Pin 1

Features

• –3.8 A, –20 V, R
R

• Extended V

• Low gate charge

• High performance trench te chnology for extremely

low R

• Low profile TSSOP-8 package

DS(ON)

GSS

1
2
3
4

= 0.043 Ω @ VGS = –4.5 V

DS(ON)

= 0.070 Ω @ VGS = –2.5 V

DS(ON)

range (±12V) for battery applications

8
7
6
5

Absolute Maximum Ratings T

o

=25

C unless otherwise noted

A

Symbol Parameter Ratings Units

V

Drain-Source Voltage

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1)
– Pulsed
PD Power Dissipation (Note 1a) 1.0 W

TJ, T

STG

(Note 1b)

Operating and Storage Junction Temperature Range

–20

±12

–3.8

–30

0.6

–55 to +150

V
V
A

°C

Thermal Characteristics

R

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 125
(Note 1b)

208

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

6963 Si6963DQ 13’’ 12mm 3000 units

2001 Fairchild Semiconductor Corporation

Si6963DQ Rev. A ( W)

Electrical Characteristics T

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1

DSS

I

GSSF

I

GSSR

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

I

On–State Drain Current VGS = –4.5 V, VDS = –5 V –15 A

D(on)

gFS Forward Transconductance VDS = –5 V, ID = –3.8 A 13.2 S

Dynamic Characteristics

C

Input Capacitance 1015 pF

iss

C

Output Capacitance 446 pF

oss

C

Reverse Transfer Capacitance

rss

Switching Characteristics (Note 2)

t

Turn–On Delay Time 11 20 ns

d(on)

tr Turn–On Rise Time 18 32 ns
t

Turn–Off Delay Time 34 55 ns

d(off)

tf Turn–Off Fall Time
Qg Total Gate Charge 9.7 16 nC
Qgs Gate–Source Charge 2.2 nC
Qgd Gate–Drain Charge

Breakdown Voltage Temperature
Coefficient

J

Gate–Body Leakage, Forward VGS = –12 V, VDS = 0 V –100 nA

Gate–Body Leakage, Reverse VGS = 12 V, VDS = 0 V 100 nA

Gate Threshold Voltage

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

= 25°C unless otherwise noted

A

V

= 0 V, ID = –250 µA

GS

I

= –250 µA, Referenced to 25°C

D

V

= VGS, ID = –250 µA

DS

I

= –250 µA, Referenced to 25°C

D

VGS = –4.5 V, ID = –3.8 A

= –2.5 V, ID = –3.0 A

V

GS

= –4.5 V, ID = –3.8 A, TJ=125°C

V

GS

= –10 V, V

V

DS

= 0 V,

GS

f = 1.0 MHz

= –5 V, ID = –1 A,

V

DD

= –4.5 V, R

V

GS

V

= –5 V, ID = –3.8 A,

DS

V

= –4.5 V

GS

GEN

= 6 Ω

–20 V

–16

mV/°C

µA

–0.6 –1.0 –1.5 V

3

0.036

0.056

0.049

0.043

0.070

0.069

mV/°C

Ω

118 pF

34 55 ns

2.4 nC

Si6963DQ

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Sourc e Di ode Forward Current –0.83 A
VSD Drain–Source Diode Forward

Voltage

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

is 125 °C/W (steady state) when mounted on 1 inch² copper pad on FR-4.

a) R

θJA

b) R

is 208 °C/W (steady state) when mounted on minimum copper pad on FR-4.

θJA

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0.

is guaranteed by design while R

θJC

θCA

VGS = 0 V, IS = –0.83 A (Note 2) –0.7 –1.2 V

is determined by the user's board design.

Si6963DQ Rev. A ( W)