Fairchild Semiconductor SI6467DQ Datasheet
Si6467DQ
P-Channel 1.8V Specified PowerTrench
MOSFET
Si6467DQ
April 2001
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been opt imized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
Features
• –9.2 A, –20 V. R
R
R
• Rds ratings for use with 1.8 V l ogi c
= 12 mΩ @ VGS = –4.5 V
DS(ON)
= 15 mΩ @ VGS = –2.5 V
DS(ON)
= 21.5 mΩ @ VGS = –1.8 V
DS(ON)
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
• Low gate charge
• High performance trench te chnology for extremely
DS(ON)
low R
• Low profile TSSOP-8 package
D
S
S
D
TSSOP-8
Pin 1
G
S
S
D
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1)
– Pulsed
PD Power Dissipation (Note 1a) 1.3 W
TJ, T
STG
Operating and Storage Junction Temperature Range
(Note 1b)
–20
±8
–9.2
–50
0.6
–55 to +150
V
V
A
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 96
(Note 1b)
208
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
6467 Si6467DQ 13’’ 12mm 3000 units
2001 Fairchild Semiconductor Corporation
°C/W
Si6467DQ Rev A (W)
Si6467DQ
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = –8 V, VDS = 0 V –100 nA
Gate–Body Leakage, Reverse VGS = 8 V VDS = 0 V 100 nA
V
= 0 V, ID = –250 µA
GS
= –250 µA, Referenced to 25°C
I
D
–20 V
–11
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = –4.5 V, VDS = –5 V –50 A
D(on)
V
= VGS, ID = –250 µA
DS
= –250 µA, Referenced to 25°C
I
D
VGS = –4.5 V, ID = –9.2 A
V
= –2.5 V, ID = –7.9 A
GS
= –1.8 V, ID = –6.5 A
V
GS
=–4.5 V, ID =–9.2 A, TJ=125°C
V
GS
–0.4 –0.6 –1.5 V
2
9
11
14
12
12
15
21.5
18
mV/°C
mΩ
gFS Forward Transconductance VDS = –5 V, ID = –9.2 A 54 S
Dynamic Characteristics
C
Input Capacitance 5878 pF
iss
C
Output Capacitance 994 pF
oss
C
Reverse Transfer Capacitance
rss
= –10 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
559 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 15 27 ns
d(on)
Tr Turn–On Rise Time 15 27 ns
T
Turn–Off Delay Time 210 336 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 60 96 nC
Qgs Gate–Source Charge 7 nC
Qgd Gate–Drain Charge
= –10 V, ID = –1 A,
V
DD
= –4.5 V, R
V
GS
= –10 V, ID = –9.2 A,
V
DS
V
= –4.5 V
GS
GEN
= 6 Ω
100 160 ns
13 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –1.2 A
VSD Drain–Source Diode Forward
Voltage
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
a) R
b) R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
is guaranteed by design while R
θJC
is 96°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
θJA
is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
θJA
θCA
VGS = 0 V, IS = –1.2 A (Note 2) –0.5 –1.2 V
is determined by the user's board design.
Si6467DQ Rev. A ( W)
Loading...