Fairchild Semiconductor SI6463DQ Datasheet
Si6463DQ
P-Channel 2.5V Specified PowerTrench
MOSFET
Si6463DQ
April 2001
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been opt imized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Features
• –8.8 A, –20 V. R
R
• Extended V
range (±12V) for battery
GSS
= 0.0125 Ω @ VGS = –4.5 V
DS(ON)
= 0.018 Ω @ VGS = –2.5 V
DS(ON)
applications
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
• Low gate charge
• High performance trench te chnology for extremely
low R
DS(ON)
• Low profile TSSOP-8 package
D
S
S
D
TSSOP-8
Pin 1
G
S
S
D
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage –20 V
DSS
V
Gate-Source Voltage
GSS
± 12
ID Drain Current – Continuous (Note 1) –8.8 A
– Pulsed –50
PD Power Dissipation (Note 1a) 1.3 W
TJ, T
STG
Operating and Storage Junction Temperature Range –55 to +150
(Note 1b)
0.6
V
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 96
(Note 1b)
208
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
6463 Si6463DQ 13’’ 16mm 3000 units
2001 Fairchild Semiconductor Corporation
°C/W
Si6463DQ Rev. A( W)
Si6463DQ
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = –12 V, VDS = 0 V –100 nA
Gate–Body Leakage, Reverse VGS = 12 V, VDS = 0 V 100 nA
= 0 V, ID = –250 µA
V
GS
= –250 µA, Referenced to 25°C
I
D
–20 V
–12
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current VGS = –4.5 V, VDS = –5 V –50 A
= VGS, ID = –250 µA
V
DS
= –250 µA, Referenced to 25°C
I
D
V
= –4.5 V, ID = –8.8 A
GS
V
= –2.5 V, ID = –7.2 A
GS
= –4.5 V, ID = –8.8 A, TJ= 125°C
V
GS
gFS Forward Transconductance VDS = –10 V, ID = –8.8 A 46 S
–0.6 –0.8 –1.5 V
3.5
10
14
13
12.5
18
19
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 5045 pF
iss
C
Output Capacitance 1035 pF
oss
C
Reverse Transfer Capacitance
rss
= –10 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
549 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 8 16 ns
d(on)
tr Turn–On Rise Time 14 25 ns
t
Turn–Off Delay Time 130 208 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 41 66 nC
Qgs Gate–Source Charge 7 nC
Qgd Gate–Drain Charge
= –10 V, ID = –1 A,
V
DD
= –4.5 V, R
V
GS
= –10 V, ID = –8.8 A,
V
DS
V
= –4.5 V
GS
GEN
= 6 Ω
80 128 ns
11 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–S ource Diode Forward Current –1.2 A
VSD
Notes:
1. R
of the drain pins. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Forward
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
θJA
is 96°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
a) R
θJA
b) R
is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
θJA
is guaranteed by design while R
θJC
VGS = 0 V, IS = –1.2 A (Note 2) –0.6 –1.2 V
is determined by the user's board design.
θCA
Si6463DQ Rev. A( W)
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