Fairchild Semiconductor SI6433DQ Datasheet

Si6433DQ

20V P-Channel PowerTrench



MOSFET

Si6433DQ

July 2001

General Description

This P-Channel 1.8V specified MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain

Features

• –4.5 A, –20 V. R

R

R

= 47 mΩ @ VGS = –4.5 V

DS(ON)

= 65 mΩ @ VGS = –2.5 V

DS(ON)

= 100 mΩ @ VGS = –1.8 V

DS(ON)

low gate charge for superior switching performance.

• R

rated for use with 1.8 V logic

DS(ON)

Applications

• Power management

• Load switch

D

S

S

D

D

TSSOP-8

Pin 1

Absolute Maximum Ratings T

G

S

S

o

=25

C unless otherwise noted

A

• Low gate charge (13nC typical)

• High performance trench technology for extremely

low R

DS(ON)

• Low profile TSSOP-8 package

5

6

7

8

4

3

2

1

Symbol Parameter Ratings Units

V

Drain–Source Voltage –20 V

DSS

V

Gate-Source Voltage

GSS

±8

ID Drain Current – Continuous (Note 1a) –4.5 A

– Pulsed –40

PD

TJ, T

STG

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range –55 to +150

(Note 1a) 1.3

(Note 1b)

0.6

V

W

°C

Thermal Characteristics

R

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 87

(Note 1b)

133

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

2001 Fairchild Sem iconductor Corporation

6433 Si6433DQ 13’’ 16mm 3000 units

°C/W

°C/W

Si6433DQ Rev C(W )

Si6433DQ

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature
Coefficient

J

Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA

= 0 V, ID = –250 µA

V

GS

= –250 µA, Referenced to 25°C

I

D

–20 V

–14

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = –4.5 V, VDS = –5 V –20 A

D(on)

= VGS, ID = –250 µA

V

DS

I

= –250 µA,

D

Referenced to 25°C
VGS = –4.5 V, ID = –4.5 A

= –2.5 V, ID = –3.7 A

V

GS

= –1.8 V, ID = –3 A

V

GS

=–4.5 V, ID =–4.5A, TJ=125°C

V

GS

gFS Forward Transconductance VDS = –5 V, ID = –4.5 A 16 S

–0.4 –0.8 –1.5 V

2.5

37
50
77
48

47
65

100

65

mV/°C

mΩ

Dynamic Characteristics

C

Input Capacitance 1193 pF

iss

C

Output Capacitance 193 pF

oss

C

Reverse Transfer Capacitance

rss

= –10 V, V

V

DS

f = 1.0 MHz

= 0 V,

GS

96 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 11 20 ns

d(on)

tr Turn–On Rise Time 9 18 ns

t

Turn–Off Delay Time 36 57 ns

d(off)

tf Turn–Off Fall Time

Qg Total Gate Charge 13 18 nC

Qgs Gate–Source Charge 2.5 nC

Qgd Gate–Drain Charge

= –10 V, ID = –1 A,

V

DD

= –4.5 V, R

V

GS

V

= –10 V, ID = –4.5 A,

DS

= –4.5 V

V

GS

GEN

= 6 Ω

19 34 ns

3.6 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –1.1 A

VSD

Notes:

1. R

θJA

the drain pins. R

Drain–Source Diode Forward
Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

is guaranteed by design while R

θJC

θCA

a) 87°C/W when

mounted on a 1in2 pad
of 2 oz copper.

V

= 0 V, IS = –1.1 A (Note 2) –0.7 –1.2 V

GS

is determined by the user's board design.

b) 133°C/W when mounted

on a minimum pad of 2 oz
copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

Si6433DQ Rev C(W )