Fairchild Semiconductor SI6415DQ Datasheet
September 2001
Si6415DQ
30V P-Channel PowerTrench
MOSFET
Si6415DQ
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been opt imized for power management
applications requiring a wide range of gave drive
voltage ratings (–4.5V – 20V).
Applications
• Battery protection
• DC/DC conversion
Features
• –6.5 A, –30 V R
R
• Extended V
GSS
• High performance trench te chnology for extremely
DS(ON)
low R
• Low profile TSSOP-8 package
= 19 mΩ @ VGS = –10 V
DS(ON)
= 30 mΩ @ VGS = –4.5 V
DS(ON)
range (±20V) for battery applications
• Power management
• Load switch
D
S
S
D
S
S
D
TSSOP-8
Pin 1
Absolute Maximum Ratings T
G
o
=25
C unless otherwise noted
A
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage –30 V
DSS
V
Gate-Source Voltage
GSS
± 20
ID Drain Current – Continuous (Note 1) –6.5 A
– Pulsed –30
PD Power Dissipation (Note 1a) 1.3 W
TJ, T
STG
Operating and Storage Junction Temperature Range –55 to +150
(Note 1b)
0.6
V
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 87
(Note 1b)
114
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2001 Fairchild Semiconductor Corporation
6415 Si6415DQ 13’’ 16mm 3000 units
°C/W
Si6415DQ Rev B(W)
Si6415DQ
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
= 0 V, ID = –250 µA
V
GS
= –250 µA, Referenced to 25°C
I
D
–30 V
–21
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = –10 V, VDS = –5 V –20 A
D(on)
= VGS, ID = –250 µA
V
DS
= –250 µA, Referenced to 25°C
I
D
VGS = –10 V, ID = –6.5 A
= –4.5 V, ID = –5.2 A
V
GS
=–10 V, ID =–6.5A, TJ=125°C
V
GS
gFS Forward Transconductance VDS = –10 V, ID = –6.5 A 24 S
–1 –1.7 –3 V
5
15
21
19
19
30
30
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 1604 pF
iss
C
Output Capacitance 408 pF
oss
C
Reverse Transfer Capacitance
rss
= –15 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
202 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 13 30 ns
d(on)
tr Turn–On Rise Time 13.5 30 ns
t
Turn–Off Delay Time 42 110 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 17 70 nC
Qgs Gate–Source Charge 5 nC
Qgd Gate–Drain Charge
= –15 V, ID = –1 A,
V
DD
= –10 V, R
V
GS
= –15 V, ID = –6.5 A,
V
DS
V
= –10 V
GS
GEN
= 6 Ω
25 60 ns
6 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –1.1 A
VSD
Notes:
1. R
θJA
the drain pins. R
a) R
b) R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Forward
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
is guaranteed by design while R
θJC
is 87 °C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
θJA
is 114 °C/W (steady state) when mounted on a minimum copper pad on FR-4.
θJA
θCA
VGS = 0 V, IS = –1.1 A (Note 2) –0.7 –1.2 V
is determined by the user's board design.
Si6415DQ Rev B(W)
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