Fairchild Semiconductor SI4874DY Datasheet
January 2001
Si4874DY
Single N-Channel, Logic Level, PowerTrench
General Description Features
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
SOT-23
TM
-6
SuperSOT
TM
-8
MOSFET
13 A, 30 V. R
R
= 0.0075 Ω @ VGS = 10 V
DS(ON)
= 0.010Ω @ VGS = 4.5 V.
DS(ON)
Fast switching speed.
Low gate charge (35 nC typical).
High performance trench technology for
extremely low R
DS(ON)
.
High power and current handling capability.
SO-8 SOT-223SuperSOT
SOIC-16
D
D
D
D
4874
G
S
SO-8
Absolute Maximum Ratings T
Symbol Parameter Si4874DY Units
V
DSS
V
GSS
I
D
Drain-Source Voltage 30 V
Gate-Source Voltage ±20 V
Drain Current - Continuous (Note 1a) 13 A
S
S
= 25oC unless other wise noted
A
5
6
7
8
4
3
2
1
- Pulsed 50
P
D
T
J,TSTG
THERMAL CHARACTERISTICS
R
JA
θ
R
JC
θ
Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b) 1.2
(Note 1c) 1
Operating and Storage Temperature Range -55 to 150 °C
Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W
© 2001 Fairchild Semiconductor International
Si4874DY Rev.A
Electrical Characteristics (T
= 25 OC unless otherwise noted )
A
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
∆BV
I
DSS
I
GSSF
I
GSSR
DSS
DSS
Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA 30 V
Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC 20 mV / oC
/∆T
J
Zero Gate Voltage Drain Current VDS = 24 V, V
= 0 V 1 µA
GS
= 55°C 10 µA
T
J
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse VGS = -20 V, V
= 0 V -100 nA
DS
ON CHARACTERISTICS (Note 2)
V
GS(th)
∆V
GS(th)
R
DS(ON)
Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.6 3 V
Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC -4.5 mV /oC
/∆T
J
Static Drain-Source On-Resistance VGS = 10 V, I D = 13 A 0.0063 0.0075
TJ =125°C 0.009 0.014
= 4.5 V, I D = 10.5 A 0.0082 0.01
V
GS
I
D(ON)
g
FS
On-State Drain Current VGS = 10 V, VDS = 5 V 50 A
Forward Transconductance VDS = 15 V, I D = 13 A 50 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = 15 V, VGS = 0 V,
Output Capacitance 820 pF
f = 1.0 MHz
3200 pF
Reverse Transfer Capacitance 400 pF
SWITCHING CHARACTERISTICS (Note 2)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time V
Turn - On Rise Time
= 10 V, I D= 1 A 15 27 ns
DS
V
= 10 V , R
GS
GEN
= 6 Ω
15 27 ns
Turn - Off Delay Time 85 105 ns
Turn - Off Fall Time 42 68 ns
Total Gate Charge VDS = 15 V, I D = 13 A, 35 50 nC
Gate-Source Charge V
= 5 V 9 nC
GS
Gate-Drain Charge 16 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Notes:
1. R
JA
θ
guaranteed by design while R
Maximum Continuous Drain-Source Diode Forward Current 2.1 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
is determined by the user's board design.
CA
θ
(Note 2) 0.71 1.2 V
Ω
is
JC
θ
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width <
a. 50OC/W on a 1 in2 pad
of 2oz copper.
300µs, Duty Cycle < 2.0%.
b. 105OC/W on a 0.04 in
pad of 2oz copper.
2
c. 125OC/W on a 0.006 in2 pad
of 2oz copper.
Si4874DY Rev.A
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