Fairchild Semiconductor SI4835DY Datasheet
Si4835DY
P-Channel Logic Level PowerTrench
MOSFET
Si4835DY
January 2001
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
• Battery protection
• Load switch
• Motor drives
D
D
D
D
G
S
SO-8
Absolute Maximum Ratings
S
S
TA = 25°C unless otherwise noted
Features
• -8.8 A, -30 V. R
R
• Extended V
GSS
= 0.020 Ω @ V
DS(ON)
= 0.035 Ω @ V
DS(ON)
range (±25V) for battery applications.
= -10 V
GS
= -4.5 V
GS
• Low gate charge (19nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R
DS(ON)
.
• High power and current handling capability.
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage -30 V
Gate-Source Voltage
Drain Current - Continuous
- Pulsed -50
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range -55 to +150
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
25
±
-8.8 A
2.5 W
1.2
1
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Ther mal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
Si4835DY 4835 13’’ 12mm 2500 units
2001 Fairchild Semiconductor International
V
C
°
C/W
°
C/W
°
Si4835DY Rev. A
Si4835DY
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆
∆
I
I
I
DSS
BV
T
DSS
GSSF
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Dra in Current VDS = -24 V, VGS = 0 V -1
Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -100 nA
On Characteristics
V
∆
∆
R
I
g
GS(th)
V
DS(on)
D(on)
FS
GS(th)
T
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain-Source
On-Resistance
On-State Drain Curre nt VGS = -10 V, VDS = -5 V -2 5 A
Forward Transconductance VDS = -10 V, ID = -8.8 A 20 S
(Note 2)
= 0 V, ID = -250 µA
V
GS
= -250 µA,Referenced to 25°C
I
D
= VGS, ID = -250 µA
V
DS
= -250 µA,Referenced to 25°C
I
D
VGS = -10 V, ID = -8.8 A
= -10 V, ID = -8.8 A,TJ=125°C
V
GS
= -4.5 V, ID = -6.7 A
V
GS
-30 V
-24
mV/°C
µ
-1 -2 -3 V
5
0.015
0.023
0.026
mV/°C
0.020
0.032
0.035
A
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 1680 pF
Output Capacitance 545 pF
Reverse Transfer Capacitance
Switching Charact eristics
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn-On Delay Time 12 22 ns
Turn-On Rise Time 15 27 ns
Turn-Off Delay Time 55 90 ns
Turn-Off Fall Time
Total Gate Charge 19 27 nC
Gate-Source Charge 6.8 nC
Gate -Drain Charg e
(Note 2)
V
= -15 V, VGS = 0 V,
DS
f = 1.0 MHz
V
= -15 V, ID = -1 A,
DD
= -10 V, R
V
GS
V
= -10 V, ID = -8.8 A,
DS
= -5 V,
V
GS
GEN
= 6
220 pF
Ω
23 37 ns
7.2 nC
Drain-So urce Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1: R
θJA
drain pins. R
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current -2.1 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
is guaranteed by design while R
θJC
a) 50° C/W when
is determined by the user's board design.
θJA
mounted on a 1 in
pad of 2 oz. copper.
2
b) 105° C/W when
mounted on a 0.04 in
pad of 2 oz. copper.
(Note 2)
2
-0.52 -1.2 V
c) 125° C/W on a minimum
mounting pad of 2 oz. copper.
Si4835Dy Rev. A
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