Fairchild Semiconductor SI4467DY Datasheet
Si4467DY
P-Channel 1.8V Specified PowerTrench
MOSFET
Si4467DY
January 2001
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
Features
• –13.5 A, –20 V. R
R
R
• Fast switching speed
= 8.5 mΩ @ VGS = –4.5 V
DS(ON)
= 10.5 mΩ @ VGS = –2.5 V
DS(ON)
= 14 mΩ @ VGS = –1.8 V
DS(ON)
Applications
• Power management
• Load switch
• Battery protection
D
D
D
D
D
D
D
D
SO-8
S
S
Pin 1
SO-8
S
S
Absolute Maximum Ratings T
G
G
S
S
=25oC unless otherwise noted
A
• High performance trench technology for extremely
low R
DS(ON)
• High current and power handling capability
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (Note 1a)
– Pulsed
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range -55 to +175
–20
±8
–13.5
–50
1.5
1.2
V
V
A
W
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Ambient (Note 1c) 125
Thermal Resistance, Junction-to-Case (Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
4467 Si4467DY 13’’ 12mm 2500 units
2001 Fairchild Semiconductor International
°C/W
°C/W
°C/W
Si4467DY Rev A
Si4467DY
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = –250 µA
V
GS
I
= –250 µA, Referenced to 25°C
D
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA
–20 V
–12
mV/°C
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = –250 µA
V
DS
I
= –250 µA, Referenced to 25°C
D
VGS = –4.5 V, ID = –13.5 A
= –2.5 V, ID = –12 A
V
GS
= –1.8 V, ID = –10.5 A
V
GS
=–4.5 V, ID =–13.5A, TJ=125°C
V
GS
On–State Drain Current VGS = –4.5 V, VDS = –5 V –50 A
Forward Transconductance VDS = –5 V, ID = –13.5 A 70 S
–0.4 –0.6 –1.5 V
3
6.7
8.0
9.8
9.0
8.5
10.5
14
13
mV/°C
mΩ
Dynamic C haracteristics
C
iss
C
oss
C
rss
Input Capacitance 8237 pF
Output Capacitance 1497 pF
Reverse Transfer Capacitance
= –10 V, V
V
DS
f = 1.0 MHz
GS
= 0 V,
750 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 20 36 ns
Turn–On Rise Time 24 38 ns
= –10V, ID = –1 A,
V
DD
= –4.5 V, R
V
GS
GEN
= 6 Ω
Turn–Off Delay Time 300 480 ns
Turn–Off Fall Time
Total Gate Charge 86 120 nC
Gate–Source Charge 20 nC
V
= –10 V, ID = –13.5 A,
DS
= –4.5 V
V
GS
Gate–Drain Charge
140 224 ns
11 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Maximum Continuous Drain–Source Diode Forward Current –2.1 A
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
θCA
V
= 0 V, IS = –2.1 A (Note 2) –0.6 –1.2 V
GS
is determined by the user's board design.
µA
a) 50 °C/W when
mounted on a 1in
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2
b) 105 °C/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 125 °C/W when mounted on a
minimum pad.
Si4467DY Rev A
Loading...