Fairchild Semiconductor SI4466DY Datasheet
Si4466DY
Single N-Channel 2.5V Specified PowerTrench
MOSFET
January 2001
FDS6570A
Si4466DY
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
• DC/DC converter
• Load switch
• Battery protection
D
D
D
D
G
S
SO-8
Absolute Maximum Ratings
S
S
TA = 25°C unless otherwise noted
Features
• 15 A, 20 V. R
R
DS(on)
DS(on)
= 0.0075 Ω @ V
= 0.010 Ω @ V
= 4.5 V
GS
= 2.5 V.
GS
• Low gate charge (47nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R
DS(ON)
.
• High power and current handling capability.
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage 20 V
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range -55 to +150 °C
±
(Note 1a)
- Pulsed 50
(Note 1a)
(Note 1b)
(Note 1c)
12 V
15 A
2.5 W
1.2
1
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50 °C/W
25 °C/W
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
4466 Si4466DY 13’’ 12mm 2500 units
2001 Fairchild Semiconductor International
Si4466DY Rev. A
FDS6570A
Si4466DY
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆
BV
∆
T
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
∆
GS(th)
V
∆
T
R
DS(on)
I
D(on)
g
FS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
DSS
Coefficient
J
V
= 0 V, ID = 250 µA
GS
I
= 250µA, Referenced to 25°C
D
20 V
29
Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
Gate–Body Leakage, Forward V
Gate–Body Leakage, Reverse V
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain-Source
On-Resistance
= 12 V, V
GS
= –12 V, V
GS
V
= V
DS
GS
I
= 250µA, Referenced to 25°C
D
= 0 V 100 nA
DS
= 0 V –100 nA
DS
, I
= 250 µA
D
0.4 0.9 1.5 V
VGS = 4.5 V, ID =15 A
= 4.5 V, ID =15 A,
V
GS
=125°C
T
J
= 2.5 V, ID =12 A
V
GS
-4
0.006
0.009
0.008
On-State Drain Current VGS = 4.5 V, VDS = 5.0 V 25 A
Forward Transconductance VDS = 5 V, ID = 15 A 70 S
0.0075
0.0130
0.0100
mV/°C
µ
A
mV/°C
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 4700 pF
Output Capacitance 850 pF
Reverse Transfer Capacitance
= 10 V, VGS = 0 V,
V
DS
f = 1.0 MHz
310 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time 20 32 ns
Turn-On Rise Time 27 44 ns
Turn-Off Delay Time 95 133 ns
Turn-Off Fall Time
Total Gate Charge 47 66 nC
Gate-Source Charge 7 nC
Gate-Drain Charge
(Note 2)
V
= 10 V, ID = 1 A,
DD
= 4.5 V, R
V
GS
= 10 V, ID = 15 A,
V
DS
= 5 V,
V
GS
GEN
= 6
Ω
35 56 ns
10.5 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
θJA
drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current 2.1 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A
is guaranteed by design while R
θJC
a) 50° C/W when
mounted on a 0.5 in
pad of 2 oz. copper.
is determined by the user's board design.
θJA
2
b) 105° C/W when
mounted on a 0.02 in
pad of 2 oz. copper.
(Note 2)
0.65 1.2 V
2
c) 125° C/W when
mounted on a 0.003 in
pad of 2 oz. copper.
2
Si4466DY Rev. A
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