Fairchild Semiconductor SI4463DY Datasheet

Si4463DY

P-Channel 2.5V Specified PowerTrench



MOSFET

Si4463DY

January 2001

General Description

This P-Channel 2.5V specified MOSFET uses a rugged
gate PowerTrench process. It has been optimized for
power management applications with a wide range of
gate drive voltage (2.5V – 12V).

Features

• –11.5 A, –20 V. R

• Fast switching speed.

R

DS(ON)

DS(ON)

= 12 mΩ @ VGS = –4.5 V

= 17.5 mΩ @ VGS = –2.5 V

Applications

• High performance trench technology for extremely

• Power management

• Load switch

• Battery protection

D

D

D

D

G

S

SO-8

S

S

Absolute Maximum Ratings T

=25oC unless otherwise noted

A

low R

DS(ON)

• High power and current handling capability

5
6
7
8

4
3
2
1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage –20 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) –11.5 A

– Pulsed –50

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)
(Note 1c)

Operating and Storage Junction Temperature Range –55 to +150

± 12

1.2

1.0

V

W

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Case (Note 1) 25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

4463 Si4463DY 13’’ 12mm 2500 units

2001 Fairchild Semiconductor International

°C/W
°C/W

Si4463DY Rev A(W)

Si4463DY

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

∆BVDSS
∆T

J

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

= 0 V, ID = –250 µA

V

GS

I

= –250 µA, Referenced to 25°C

D

Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA

–20 V

–12

mV/°C

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

J

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient
Static Drain–Source

On–Resistance

= VGS, ID = –250 µA

V

DS

I

= –250 µA, Referenced to 25°C

D

VGS = –4.5 V, ID = –11.5 A

= –2.5 V, ID = –9.5 A

V

GS

= –4.5 V, ID = –11.5A, TJ=125°C

V

GS

On–State Drain Current VGS = –4.5 V, VDS = –5 V –50 A
Forward Transconductance VDS = –10 V, ID = –10 A 49 S

–0.6 –0.8 –1.5 V

3

10
14
13

12

17.5
18

mV/°C

mΩ

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 4481 pF
Output Capacitance 1532 pF
Reverse Transfer Capacitance

= –10 V, V

V

DS

f = 1.0 MHz

GS

= 0 V,

540 pF

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 15 30 ns
Turn–On Rise Time 15 30 ns

= –5 V, ID = –1 A,

V

DD

= –4.5 V, R

V

GS

GEN

= 6 Ω

Turn–Off Delay Time 120 240 ns
Turn–Off Fall Time
Total Gate Charge 41 60 nC
Gate–Source Charge 6.4 nC

V

= –10 V, ID = –11.5 A,

DS

= –4.5 V

V

GS

Gate–Drain Charge

60 120 ns

11.8 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Maximum Continuous Drain–Source Diode Forward Current –2.1 A
Drain–Source Diode Forward

Voltage

is guaranteed by design while R

θJC

θCA

V

= 0 V, IS = –1.5 A (Note 2) –0.65 –1.2 V

GS

is determined by the user's board design.

µA

a) 50°/W when

mounted on a 1in
pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

2

b) 105°/W when

mounted on a .04 in
pad of 2 oz copper

2

c) 125°/W when mounted on a

minimum pad.

Si4463DY Rev A1(W)