Fairchild Semiconductor SI4450DY Datasheet

Si4450DY

60V N-Channel PowerTrench MOSFET

Si4450DY

January 2001

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.

These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.

Applications

• DC/DC converter

• Load switch

• Motor drives

D

D

D

D

G

S

SO-8

Absolute Maximum Ratings T

S

S

= 25°C unless otherwise noted

A

Features

8 A, 60 V. R

•

R

DS(on)

DS(on)

= 0.020 Ω @ V

= 0.025 Ω @ V

= 10 V

GS

GS

= 6 V.

• Low gate charge (30nC typical).

• Fast switching speed.

• High performance trench technology for extremely

low R

DS(ON)

.

• High power and current handling capability .

5

6

7
8

4

3

2

1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage 60 V
Gate-Source Voltage
Drain Current - Continuous (Note 1a) 8A

- Pulsed 50

Power Dissipation for Si ngle Operation (Note 1a) 2.5 W

(Note 1b)
(Note 1c)

Operating and Storage Junct i on Temperature Range -55 to +150

±20

1.2
1

Thermal Characteristics

R

θJA

R

θJC

Thermal Resist ance, Junction-to-A mbient
Thermal Resist ance, Junction-to-Cas e (Note 1) 25

(Note 1a)

50

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

4450 Si4450DY 13’’ 12mm 2500 units

2001 Fairchild Semiconductor International

V

°C

°C/W
°C/W

Si4450DY Rev. A

Electrical Characteristics

T = 25°C unless otherwise noted

A

Si4450DY

Symbol Parameter Test Conditions Min Typ

Off Characteristics

BV

DSS

∆BVDSS
∆T

J

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

= 0 V, ID = 250 µA

V

GS

= 250 µA, Referenced to 25°C

I

D

Zero Gate Voltag e Drai n Curre nt VDS = 48 V, VGS = 0 V 1
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA

60 V

27

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

J

R

DS(on)

I

D(on)

g

FS

Gate Threshold V olt ag e
Gate Threshold V olt ag e

Temperature Coefficient
Static Drain-Source

On-Resistance

= VGS, ID = 250 µA

V

DS

= 250 µA, Referenced to 25°C

I

D

VGS = 10 V, ID = 8 A
V

= 10 V, ID = 8 A, TJ = 125°C

GS

V

= 6 V, ID = 7.5 A

GS

On-State D rain Current VGS = 10 V, VDS = 5 V 25 A
Forward Transconductance VDS = 5 V, ID = 8 A 28 mS

22.5 4 V

-4.5

0.017

0.027

0.019

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 1850 pF
Output Capacitance 290 pF
Reverse Transfer Capacitance

V

= 15 V, VGS = 0 V

DS

f = 1.0 MHz

100 pF

Switching Characteristics (Note 2)

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Dela y Time 13 24 ns
Turn-On Rise Time 8 16 ns

= 30 V, ID = 1 A

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

Turn-Off Del ay Time 16 26 ns
Turn-Off Fall Time
Total Gate Charge 30 42 nC
Gate-Source Charge 8.5 nC

V

= 15 V, ID = 8 A

DS

= 10 V,

V

GS

Gate-Drain Charge

32 50 ns

5.5 nC

Max

0.020

0.032

0.025

Units

mV/°C

µA

mV/°C

Ω

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:
1: R

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the

θJA

drain pins. R

Scale 1 : 1 on letter size paper

2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

θJC

Maximum Continuous Drain-Source Diode Forward Current 2.1 A

Drain-Sourc e Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.74 1.2 V

is guaranteed by design while R

a) 50° C/W when

mounted on a 0.5 in
pad of 2 oz. copper.

is determined by the user's board design.

θCA

2

b) 105° C/W when

mounted on a 0.02 in
pad of 2 oz. copper.

2

c) 125° C/W when

mounted on a minimum pad.

Si4450DY Rev A