Fairchild Semiconductor SI4431DY Datasheet

Si4431DY

P-Channel Logic Level PowerTrench



MOSFET

Si4431DY

January 2001

General Description

This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.

These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.

Applications

• DC/DC converter

• Load switch

• Motor Drive

D

D

D

D

G

S

SO-8

Absolute Maximum Ratings T

S

S

=25oC unless otherwise noted

A

Features

• –6.3 A, –30 V. R

• Low gate charge

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

5
6
7
8

= 0.032 Ω @ V

DS(ON)

R

= 0.05 Ω @ V

DS(ON)

GS

4
3
2
1

= -10 V

GS

= -4.5 V

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage –30 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) -6.3 A

– Pulsed -40

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)
(Note 1c)

Operating and Storage Junction Temperature Range -55 to +150

±20

1.2

1.0

V

W

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Case (Note 1) 25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

4431 Si4431DY 13’’ 12mm 2500 units

2001 Fairchild Semiconductor International

°C/W
°C/W

Si4431DY Rev A

Si4431DY

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

∆BVDSS
∆T

J

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

= 0 V, ID = -250 µA

V

GS

I

= -250 µA, Referenced to 25°C

D

Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V -1
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = -20 V VDS = 0 V –100 nA

-30 V

-22

mV/°C

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

J

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient
Static Drain–Source

On–Resistance

= VGS, ID = –250 µA

V

DS

I

= –250 µA, Referenced to 25°C

D

VGS = –10 V, ID = –7.0 A

= –4.5 V, ID = –5.5 A

V

GS

= –10 V, ID = –7.0A, TJ=125°C

V

GS

On–State Drain Current VGS = –10 V, VDS = –5 V –20 A
Forward Transconductance VDS = –10 V, ID = –7.0 A 14.5 S

–1 –1.5 –3 V

4

0.027

0.04

0.04

mV/°C

0.032

0.05

0.54

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 930 pF
Output Capacitance 278 pF
Reverse Transfer Capacitance

= –15 V, V

V

DS

f = 1.0 MHz

GS

= 0 V,

114 pF

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 12 21 ns
Turn–On Rise Time 11 20 ns

= –15 V, ID = –1 A,

V

DD

= –10 V, R

V

GS

GEN

= 6 Ω

Turn–Off Delay Time 33 52 ns
Turn–Off Fall Time
Total Gate Charge 18 29 nC
Gate–Source Charge 2.5 nC

V

= –15 V, ID = –7.2 A,

DS

= –10 V

V

GS

Gate–Drain Charge

13 23 ns

4.1 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Maximum Continuous Drain–Source Diode Forward Current –2.1 A
Drain–Source Diode Forward

Voltage

is guaranteed by design while R

θJC

θCA

V

= 0 V, IS = –2.1 A (Note 2) –0.76 –1.2 V

GS

is determined by the user's board design.

µA

Ω

a) 50°/W when

mounted on a 1in
pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

2

b) 105°/W when

mounted on a .04 in
pad of 2 oz copper

2

c) 125°/W when mounted on a

minimum pad.

Si4431DY Rev A