Fairchild Semiconductor SI3861DV Datasheet
App
T
Si3861DV
Integrated Load Switch
General Description
This device is particularly suited for compact power
management in portable electronic equipment where
2.5V to 8V input and 2.8A output current capability are
needed. This load switch integrates a small N-Channel
power MOSFET (Q1) that drives a large P-Channel
power MOSFET (Q2) in one tiny SuperSOT
package.
Applications
• Load switch
• Power management
TM
-6
August 2001
Features
• –2.8 A, –8 V. R
R
R
• Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6KV Human body model)
• High performance trench technology for extremely
low R
DS(ON)
= 55 mΩ @ VGS = –4.5 V
DS(ON)
= 70 mΩ @ VGS = –2.5 V
DS(ON)
= 100 mΩ @ VGS = –1.8 V
DS(ON)
Si3861DV
D2
S1
D1
SuperSOT -6
TM
Pin 1
SuperSOT™-6
G1
G2
S2
Vin,R1
ON/OFF
R1,C1
Absolute Maximum Ratings T
Q2
4
5
Q1
6
See
lication Circuit
o
=25
C unless otherwise noted
A
3
2
1
Vout,C1
Vout,C1
R2
Equivalent Circuit
IN OU
+–
V
DROP
ON/OFF
Symbol Parameter Ratings Units
VIN Maximum Input Voltage
V
High level ON/OFF voltage range –0.5 to 8 V
ON/OFF
I
Load Current – Continuous (Note 1) –2.8 A
Load
± 8
V
– Pulsed –9
PD
TJ, T
STG
Maximum Power Dissipation
Operating and Storage Junction Temperature Range –55 to +150
(Note 1) 0.7
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1) 180
(Note 1) 60
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.861
Si3861DV 7’’ 8mm 3000 units
2001 Fairchild Sem iconductor Corporation
Si3861DV Rev B(W )
Si3861DV
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVIN Vin Breakdown Voltage
I
Zero Gate Voltage Drain Current VIN = 6.4 V, V
Load
IFL Leakage Current, Forward V
IRL Leakage Current, Reverse V
= 0 V, ID = –250 µA
V
ON/OFF
= 0 V, VIN = 8 V –100 nA
ON/OFF
= 0 V, VIN = –8 V 100 nA
ON/OFF
= 0 V –1
ON/OFF
8 V
On Characteristics (Note 2)
V
R
Gate Threshold Voltage
ON/OFF (th)
Static Drain–Source
DS(on)
On–Resistance (Q2)
R
Static Drain–Source
DS(on)
On–Resistance (Q1)
= V
V
IN
= 4.5 V, ID = –2.8A
V
IN
V
= 2.5 V, ID = –2.5 A
IN
= 1.8 V, ID = –2.0 A
V
IN
= 4.5 V, ID = 0.4A
V
IN
= 2.7 V, ID = 0.2 A
V
IN
, ID = –250 µA
ON/OFF
0.4 0.9 1.5 V
34
45
64
3.1
3.8
55
70
100
4
5
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current –0.6 A
I
S
VSD Drain–Source Diode Forward
V
= 0 V, IS = –0.6 A (Note 2) –1.2 V
ON/OFF
Voltage
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
θJA
surface of the drain pins. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
is guaranteed by design while R
θJC
is determined by the user’s board design.
θJA
Si3861DV Load Switch Application Circuit
IN
Q2
OUT
µA
mΩ
Ω
R1
C1
Q1
LOAD
ON/OFF
R2
External Component Recommendation:
For additional in-rush current control, R2 and C1 can be added. For more information, see application note AN1030.
Si3861DV Rev B(W )