Fairchild Semiconductor SI3447DV Datasheet
Si3447DV
P-Channel 1.8V Specified PowerTrench
MOSFET
Si3447DV
April 2001
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
• Battery protection
Features
• –5.5 A, –20 V. R
R
R
• Fast switching speed.
• High performance trench te chnology for extremely
low R
DS(ON)
= 33 mΩ @ VGS = –4.5 V
DS(ON)
= 43 mΩ @ VGS = –2.5 V
DS(ON)
= 60 mΩ @ VGS = –1.8 V
DS(ON)
S
D
D
1
2
6
5
G
SuperSOT -6
TM
D
D
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
3
4
Symbol Parameter Ratings Units
V
Drain-Source Voltage –20 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) –5.5 A
– Pulsed –20
Maximum Power Dissipation (Note 1a) 1.6 W PD
TJ, T
Operating and Storage Junction Temperature Range –55 to +150
STG
(Note 1b)
±8
0.8
V
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 78
(Note 1) 30
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.447 Si3447DV 7’’ 8mm 3000 units
2001 Fairchild Semiconductor Corporation
°C/W
°C/W
Si3447DV Rev A (W)
Si3447DV
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA
V
= 0 V, ID = –250 µA
GS
= –250 µA,Referenced to 25°C
I
D
–20 V
–12
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = –4.5 V, VDS = –5 V –20 A
D(on)
V
= VGS, ID = –250 µA
DS
= –250 µA,Referenced to 25°C
I
D
VGS = –4.5 V, ID = –5.5 A
V
= –2.5 V, ID = –4.8 A
GS
= –1.8 V, ID = –4.0 A
V
GS
–0.4 –0.7 –1.5 V
3
24
30
42
33
43
60
mV/°C
mΩ
gFS Forward Transconductance VDS = –5 V, ID = –3.5 A 23 S
Dynamic Characteristics
C
Input Capacitance 1926 pF
iss
C
Output Capacitance 530 pF
oss
C
Reverse Transfer Capacitance
rss
= –10 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
185 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 13 23 ns
d(on)
tr Turn–On Rise Time 11 20 ns
t
Turn–Off Delay Time 90 144 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 19 30 nC
Qgs Gate–Source Charge 4 nC
Qgd Gate–Drain Charge
= –10 V, ID = –1 A,
V
DD
= –4.5 V, R
V
GS
= –10 V, ID = –3.5 A,
V
DS
V
= –4.5 V
GS
GEN
= 6 Ω
45 72 ns
7.5 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –1.3 A
VSD Drain–Source Diode Forward
Voltage
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
θJA
pins. R
a. 78°C/W when mounted on a 1in
b. 156°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
is guaranteed by design while R
θJC
2
pad of 2oz copper on FR-4 board.
is determined by the user's board design.
θCA
VGS = 0 V, IS = –1.3 A (Note 2) –0.7 –1.2 V
Si3447DV Rev A(W)
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