Fairchild Semiconductor SGW5N60RUF Datasheet
©2002 Fairchild Semiconductor Corporation SGW5N60RUF Rev. A1
IGBT
SGW5N60RUF
SGW5N60RUF
Short Circuit Rated IGBT
General Description
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inv erters
where short circuit ruggedness is a required feature.
Features
• Short circuit Rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : V
CE(sat)
= 2.2 V @ IC = 5A
• High input impedance
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
Symbol Description SGW5N60RUF Units
V
CES
Collector-Emitter Voltage 600 V
V
GES
Gate-Emitter Voltage ± 20 V
I
C
Collector Current @ TC = 25°C8 A
Collector Current @ T
C
= 100°C5 A
I
CM (1)
Pulsed Collector Current 15 A
T
SC
Short Circuit Withstand Time @ TC = 100°C10 us
P
D
Maximum Power Dissipation @ TC = 25°C60 W
Maximum Power Dissipation @ T
C
= 100°C25 W
T
J
Operating Junction Temperature -55 to +150 °C
T
stg
Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
300 °C
Symbol Parameter Typ. Max. Units
R
θJC
Thermal Resistance, Junction-to-Case -- 2.0 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
-- 40 °C/W
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
G
C
E
G
C
E
G
E
C
D2-PAK
SGW5N60RUF Rev. A1
SGW5N60RUF
©2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT T
C
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
∆B
VCES
/
∆T
J
T emperature Coefficient of Breakdown
Voltage
V
GE
= 0V, IC = 1mA -- 0.6 -- V/°C
I
CES
Collector Cut-Off Current VCE = V
CES
, VGE = 0V -- -- 250 uA
I
GES
G-E Leakage Current VGE = V
GES
, VCE = 0V -- -- ± 100 nA
On Characteristics
V
GE(th)
G-E Threshold Voltage IC = 5mA, VCE = V
GE
5.0 6.0 8.5 V
V
CE(sat)
Collector to Emitter
Saturation Voltage
I
C
= 5A
,
VGE = 15V
-- 2.2 2.8 V
I
C
= 8A
,
VGE = 15V
-- 2.5 -- V
Dynamic Characteristics
C
ies
Input Capacitance
V
CE
= 30V, VGE = 0V,
f = 1MHz
-- 354 -- pF
C
oes
Output Capacitance -- 67 -- pF
C
res
Reverse Transfer Capacitance -- 14 -- pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, IC = 5A,
R
G
= 40Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
-- 13 -- ns
t
r
Rise Time -- 24 -- ns
t
d(off)
Turn-Off Delay Time -- 34 50 n s
t
f
Fall Time -- 136 200 ns
E
on
Turn-On Switching Loss -- 88 -- uJ
E
off
Turn-Off Switching Loss -- 107 -- uJ
E
ts
Total Switching Loss -- 195 280 uJ
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, IC = 5A,
R
G
= 40Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
-- 13 -- ns
t
r
Rise Time -- 26 -- ns
t
d(off)
Turn-Off Delay Time -- 40 60 n s
t
f
Fall Time -- 250 350 ns
E
on
Turn-On Switching Loss -- 103 -- uJ
E
off
Turn-Off Switching Loss -- 220 -- uJ
E
ts
Total Switching Loss -- 323 -- uJ
T
sc
Short Circuit Withstand Time
VCC = 300 V, V
GE
= 15V
@
TC = 100°C
10 -- -- us
Q
g
Total Gate Charge
V
CE
= 300 V, IC = 5A,
V
GE
= 15V
-- 16 24 nC
Q
ge
Gate-Emitter Charge -- 3 6 nC
Q
gc
Gate-Collector Charge -- 7 14 nC
L
e
Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH
SGW5N60RUF Rev. A1
SGW5N60RUF
©2002 Fairchild Semiconductor Corporation
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Volta ge vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
02468
0
5
10
15
20
25
20V
12V
15V
VGE = 10V
Common Emitter
TC = 25
℃
Collector Curren t, I
C
[A]
Colle ctor - Emit ter Voltag e, VCE [V]
110
0
4
8
12
16
20
Common Emitter
V
GE
= 15V
T
C
= 25℃
━━
T
C
= 125℃ ------
Collector Current, I
C
[A]
Collector - Emitter Voltage, VCE [V]
-50 0 50 100 150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10A
5A
IC = 3A
Common Emitter
V
GE
= 15V
Collector - Emitter V oltage, V
CE
[V]
Case Temperature, TC [℃]
0
2
4
6
8
10
0.1 1 10 100 1000
Duty cycle : 50%
T
C
= 100
℃
Power Dissipation = 12W
VCC = 300V
Load Current : pe ak of square wave
Frequency [KHz]
Load Current [A]
0 4 8 121620
0
4
8
12
16
20
10A
5A
IC = 3A
Common Emitter
T
C
= 25
℃
Collector - Emitter Voltage, V
CE
[V]
Gate - Emitter Voltage, VGE [V]
0 4 8 12 16 20
0
4
8
12
16
20
Common Emitter
T
C
= 125
℃
10A
5A
IC = 3A
Collector - Em itter Volt age, V
CE
[V]
Gate - Emitter Voltage, VGE [V]
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