Fairchild Semiconductor SGW23N60UFD Datasheet

SGW23N60UFD

IGBT

SGW23N60UFD

Ultra-Fast IGBT

General Description

Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

C

G

Absolute Maximum Ratings T

Symbol Description SGW23N60UFD Units

V

CES

V

GES

I

C

I

CM (1)

I

F

I

FM

P

D

T

Operating Junction Temperature -55 to +150 °C

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C23 A
Collector Current @ T
Pulsed Collector Current 92 A
Diode Continuous Forward Current @ TC = 100°C12 A
Diode Maximum Forward Current 92 A
Maximum Power Dissipation @ TC = 25°C 100 W
Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

D2-PAK

E

= 25°C unless otherwise noted

C

Features

• High speed switching

• Low saturation voltage : V

• High input impedance

• CO-PAK, IGBT with FRD : t

G

G

= 100°C12 A

C

= 100°C40 W

C

300 °C

= 2.1 V @ IC = 12A

CE(sat)

= 42ns (typ.)

rr

C

C

E

E

Thermal Characteristics

Symbol Parameter Typ. Max. Units

(IGBT) Thermal Resistance, Junction-to-Case -- 1.2 °C/W

R

θJC

R

(DIODE) Thermal Resistance, Junction-to-Case -- 2.5 °C/W

θJC

R

θJA

Notes :

(2) Mounted on 1” squre PCB (FR4 or G-10 Material)

©2002 Fairchild Semiconductor Corporation SGW23N60UFD Rev. A1

Thermal Resistance, Junction-to-Ambient (PCB Mount)

(2)

-- 40 °C/W

SGW23N60UFD

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES

VCES
J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

T emperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 uA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 12mA, VCE = V

,

Collector to Emitter
Saturation Voltage

I
I

= 12A

C

= 23A

C

VGE = 15V

,

VGE = 15V

GE

3.5 4.5 6.5 V

-- 2.1 2.6 V

-- 2.6 -- V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 100 -- pF
Reverse Transfer Capacitance -- 25 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 720 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 250 400 uJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 525 800 uJ

E

ts

Q

g

Q

ge

Q

gc

L

e

Turn-On Delay Time

-- 17 -- ns
Rise Time -- 27 -- ns
Turn-Off Delay Time -- 60 130 ns
Fall Time -- 70 150 ns
Turn-On Switching Loss -- 115 -- uJ

V

= 300 V, IC = 12A,

CC

R

= 23Ω, V

G

GE

Inductive Load, T

= 15V,

= 25°C

C

Turn-Off Switching Loss -- 13 5 -- u J

Turn-On Delay Time

-- 23 -- ns
Rise Time -- 32 -- ns
Turn-Off Delay Time -- 100 200 ns
Fall Time -- 220 250 ns
Turn-On Switching Loss -- 205 -- uJ

= 300 V, IC = 12A,

V

CC

= 23Ω, V

R

G

GE

Inductive Load, T

= 15V,

= 125°C

C

Turn-Off Switchi ng Lo s s -- 320 -- uJ

Total Gate Charge
Gate-Emitter Charge -- 11 17 nC
Gate-Collector Charge -- 14 22 nC

= 300 V, IC = 12A,

V

CE

V

GE

= 15V

-- 49 80 nC

Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH

Electrical Characteristics of DIODE T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

T

V

FM

t

rr

I

rr

Q

rr

©2002 Fairchild Semiconductor Corporation

Diode Forward Voltage IF = 12A

Diode Reverse Recovery Time

Diode Peak Reverse Recovery
Current

Diode Reverse Recovery Charge

I

= 12A,

F

di/dt = 200A/us

= 25°C

C

= 100°C

T

C

TC = 25°C

= 100°C

T

C

T

= 25°C

C

= 100°C

T

C

T

= 25°C

C

= 100°C

T

C

-- 1.4 1.7

-- 1.3 --

-- 42 60

-- 80 --

-- 3.5 6.0

-- 5.6 --

-- 80 180

-- 220 --

V

ns

A

nC

SGW23N60UFD Rev. A1

SGW23N60UFD

100

Common Emitter

℃

TC = 25

80

[A]

C

60

40

Collector Cu rrent, I

20

0

02468

20V

15V

12V

VGE = 10V

Collector - Emitter Voltage, VCE [V]

50

Common Emitter
V

= 15V

GE

T

= 25℃

C

40

T

= 125℃

C

[A]

C

30

20

Collector Current, I

10

0

0.5 1 10

Collector - Emitter Voltage, VCE [V]

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage

[V]

CE

4

Common Emitter
V

= 15V

GE

3

2

24A

12A

Characteristics

20

15

10

VCC = 300V
Load Current : peak of square wave

IC = 6A

1

Collector - Emitter Voltage, V

0

0306090120150

Case Temperature, TC [℃]

Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

048121620

IC = 6A

12A

24A

Gate - Emitter Voltage, VGE [V]

Common Emitter

℃

T

= 25

C

Load Current [A]

5

Duty cycle : 50%

℃

T

= 100

C

Power Dissipation = 21W

0

0.1 1 10 100 1000

Frequency [KHz]

Fig 4. Load Current vs. Frequ ency

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

IC = 6A

0 4 8 12 16 20

12A

Gate - Emitter Voltage, VGE [V]

24A

Common E mitter
T

= 125

C

℃

Fig 5. Satur ation Voltage vs. V

©2002 Fairchild Semiconductor Corporation

Fig 6. Saturation Voltage vs. VGE

GE

SGW23N60UFD Rev. A1