Fairchild Semiconductor SGW20N60RUF Datasheet
©2002 Fairchild Semiconductor Corporation SGW20N60RUF Rev. A1
IGBT
SGW20N60RUF
SGW20N60RUF
Short Circuit Rated IGBT
General Description
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inv erters
where short circuit ruggedness is a required feature.
Features
• Short circuit rated 10µs @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : V
CE(sat)
= 2.2 V @ IC = 20A
• High input impedance
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
Symbol Description SGW20N60RUF Units
V
CES
Collector-Emitter Voltage 600 V
V
GES
Gate-Emitter Voltage ± 20 V
I
C
Collector Current @ TC = 25°C32 A
Collector Current @ T
C
= 100°C20 A
I
CM (1)
Pulsed Collector Current 60 A
T
SC
Short Circuit Withstand Time @ TC = 100°C10 µs
P
D
Maximum Power Dissipation @ TC = 25°C 195 W
Maximum Power Dissipation @ T
C
= 100°C75 W
T
J
Operating Junction Temperature -55 to +150 °C
T
stg
Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Tem p. for soldering
Purposes, 1/8” from case for 5 seconds
300 °C
Symbol Parameter Typ. Max. Units
R
θJC
Thermal Resistance, Junction-to-Case -- 0.64 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
-- 40 °C/W
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
G
C
E
G
C
E
G
E
C
D2-PAK
SGW20N60RUF Rev. A1
SGW20N60RUF
©2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT T
C
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
∆B
VCES
/
∆T
J
T emperature Coefficient of Breakdown
Voltage
V
GE
= 0V, IC = 1mA -- 0.6 -- V/°C
I
CES
Collector Cut-Off Current VCE = V
CES
, VGE = 0V -- -- 250 uA
I
GES
G-E Leakage Current VGE = V
GES
, VCE = 0V -- -- ± 100 nA
On Characteristics
V
GE(th)
G-E Threshold Voltage IC = 20mA, VCE = V
GE
5.0 6.0 8.5 V
V
CE(sat)
Collector to Emitter
Saturation Voltage
I
C
= 20A
,
VGE = 15V
-- 2.2 2.8 V
I
C
= 32A
,
VGE = 15V
-- 2.5 -- V
Dynamic Characteristics
C
ies
Input Capacitance
V
CE
= 30V, VGE = 0V,
f = 1MHz
-- 1323 -- pF
C
oes
Output Capacitance -- 254 -- pF
C
res
Reverse Transfer Capacitance -- 47 -- pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, IC = 20A,
R
G
= 10Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
-- 30 -- ns
t
r
Rise Time -- 49 -- ns
t
d(off)
Turn-Off Delay Time -- 48 70 ns
t
f
Fall Time -- 152 200 ns
E
on
Turn-On Switching Loss -- 524 -- uJ
E
off
Turn-Off Switching Loss -- 473 -- uJ
E
ts
Total Switching Loss -- 997 1400 uJ
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, IC = 20A,
R
G
= 10Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
-- 30 -- ns
t
r
Rise Time -- 51 -- ns
t
d(off)
Turn-Off Delay Time -- 52 75 ns
t
f
Fall Time -- 311 400 ns
E
on
Turn-On Switching Loss -- 568 -- uJ
E
off
Turn-Off Switching Loss -- 1031 -- uJ
E
ts
Total Switching Loss -- 1599 2240 uJ
T
sc
Short Circuit Withstand Time
VCC = 300 V, V
GE
= 15V
@
TC = 100°C
10 -- -- us
Q
g
Total Gate Charge
V
CE
= 300 V, IC = 20A,
V
GE
= 15V
-- 55 80 nC
Q
ge
Gate-Emitter Charge -- 10 15 nC
Q
gc
Gate-Collector Charge -- 25 40 nC
L
e
Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH
SGW20N60RUF Rev. A1
SGW20N60RUF
©2002 Fairchild Semiconductor Corporation
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Vol ta ge Ch ar act er i stic s
Fig 3. Satur ation Voltage vs. Case
Temp er at ur e at Variant Current Level
Fig 4. Load Current vs. Frequ ency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. VGE
02468
0
10
20
30
40
50
60
20V
12V
15V
VGE = 10V
Common Emitter
TC = 25
℃
Collector Current, I
C
[A]
Collector - Emitter Voltage, VCE [V]
110
0
10
20
30
40
50
60
Common Emitter
V
GE
= 15V
T
C
= 25℃
━━
T
C
= 125℃ ------
Collector Current, I
C
[A]
Colle ctor - Emitter Volt age, VCE [V]
-50 0 50 100 150
0
1
2
3
4
5
20A
40A
30A
IC = 10A
Common Emitter
V
GE
= 15V
Collector - Emitter Voltage, V
CE
[V]
Case Temperature, TC [℃]
048121620
0
4
8
12
16
20
Common Emitter
T
C
= 25
℃
30A
20A
IC = 10A
Collec t o r - Emitter V o lt age, V
CE
[V]
Gate - Emitter Voltag e , VGE [V]
0 4 8 12 16 20
0
4
8
12
16
20
Common E mitter
T
C
= 125
℃
30A
20A
IC = 10A
Collector - Emitter Voltage, V
CE
[V]
Gate - Em itter V oltag e, VGE [V]
0
4
8
12
16
20
24
28
0.1 1 10 100 1000
Duty cycle : 50%
T
C
= 100
℃
Power Dissipation = 32W
VCC = 300V
Load Current : peak of square w ave
Frequency [KHz]
Load Current [A]
Loading...