Fairchild Semiconductor SGW10N60RUFD Datasheet
SGW10N60RUFD
IGBT
SGW10N60RUFD
Short Circuit Rated IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduct ion and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and ge neral inverters
where short circuit ruggedness is a required feature.
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
Absolute Maximum Ratings T
Symbol Description SGW10N60RUFD Units
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
T
SC
P
D
Operating Junction Temperature -55 to +150 °C
T
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C16 A
Collector Current @ T
Pulsed Collector Current 30 A
Diode Continuous Forward Current @ TC = 100°C12 A
Diode Maximum Forward Current 92 A
Short Circuit Withstand Time @ TC = 100°C10 us
Maximum Power Dissipation @ TC = 25°C75 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150 °C
Maximum Lead Tem p. for So ldering
Purposes, 1/8” from Case for 5 Seconds
D2-PAK
E
= 25°C unless otherwise noted
C
Features
• Short circuit rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : V
• High input impedance
• CO-PAK, IGBT with FRD : t
G
G
= 100°C10 A
C
= 100°C30 W
C
300 °C
= 2.2 V @ IC = 10A
CE(sat)
= 42ns (typ.)
rr
C
C
E
E
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
(IGBT) Thermal Resistance, Junction-to-Case -- 1.6 °C/W
θJC
R
(DIODE) Thermal Resistance, Junction-to-Case -- 2.5 °C/W
θJC
R
θJA
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
©2002 Fairchild Semiconductor Corporation SGW10N60RUFD Rev. A1
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
-- 40 °C/W
SGW10N60RUFD
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆B
∆T
I
CES
I
GES
CES
VCES
J
Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
/
T emperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
V
= 0V, IC = 1mA -- 0.6 -- V/°C
GE
, VGE = 0V -- -- 250 uA
CES
, VCE = 0V -- -- ± 100 nA
GES
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage IC = 10mA, VCE = V
,
Collector to Emitter
Saturation Voltage
I
I
= 10A
C
= 16A
C
VGE = 15V
,
VGE = 15V
GE
5.0 6.0 8.5 V
-- 2.2 2.8 V
-- 2.5 -- V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance -- 115 -- pF
Reverse Transfer Capacitance -- 25 -- pF
= 30V, VGE = 0V,
V
CE
f = 1MHz
-- 660 -- pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
Total Switching Loss -- 356 500 uJ
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss -- 613 860 uJ
E
ts
T
sc
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
-- 15 -- ns
Rise Time -- 30 -- ns
Turn-Off Delay Time -- 36 50 ns
Fall Time -- 158 200 ns
Turn-On Switching Loss -- 141 -- uJ
V
= 300 V, IC = 10A,
CC
R
= 20Ω, V
G
GE
Inductive Load, T
= 15V,
= 25°C
C
Turn-Off Switching Loss -- 2 1 5 -- uJ
Turn-On Delay Time
-- 16 -- ns
Rise Time -- 33 -- ns
Turn-Off Delay Time -- 42 60 ns
Fall Time -- 242 350 ns
Turn-On Switching Loss -- 161 -- uJ
= 300 V, IC = 10A,
V
CC
= 20Ω, V
R
G
GE
Inductive Load, T
= 15V,
= 125°C
C
Turn-Off Switching Loss -- 4 5 2 -- uJ
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge -- 5 10 nC
Gate-Collector Charge -- 8 16 nC
VCC = 300 V, V
@
TC = 100°C
= 300 V, IC = 10A,
V
CE
V
= 15V
GE
= 15V
GE
10 -- -- us
-- 30 45 nC
Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH
Electrical Characteristics of DIODE T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
T
V
FM
t
rr
I
rr
Q
rr
©2002 Fairchild Semiconductor Corporation
Diode Forward Voltage IF = 12A
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
= 12A,
I
F
di/dt = 200A/us
= 25°C
C
= 100°C
T
C
TC = 25°C
= 100°C
T
C
= 25°C
T
C
T
= 100°C
C
T
= 25°C
C
= 100°C
T
C
-- 1.4 1.7
-- 1.3 --
-- 42 60
-- 60 --
-- 3.5 6.0
-- 5.6 --
-- 80 180
-- 220 --
SGW10N60RUFD Rev. A1
V
ns
A
nC
SGW10N60RUFD
[A]
C
Collector Current, I
30
Common Emitter
V
GE
25
T
C
T
C
20
15
10
5
0
= 15V
━━
= 25℃
= 125℃ ------
110
Collector - Emitter Voltage, VCE [V]
40
Common Emitter
℃
TC = 25
35
30
[A]
C
25
20
15
Collector Current, I
10
5
0
02468
20V
15V
12V
VGE = 10V
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics
4.0
Comm o n Emitt er
V
= 15V
GE
3.5
[V]
CE
3.0
2.5
2.0
1.5
Collector - Emitter Voltage, V
1.0
-50 0 50 100 150
Case Temperature, TC [℃]
20A
10A
IC = 5A
16
14
12
10
8
6
Load Current [A]
4
Duty cycle : 50%
2
0
℃
T
= 100
C
Power Dissipation = 18 W
0.1 1 10 100 1000
VCC = 300V
Load Current : pea k of square wave
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temp erature at Variant Current Level
20
Common Emitter
℃
T
= 25
C
16
[V]
CE
12
8
4
Collector - Emitter Voltage, V
0
048121620
IC = 5A
10A
20A
Gate - Emitter Voltage, VGE [V]
Fig 5. Satur ation Voltage vs. V
©2002 Fairchild Semiconductor Corporation
Fig 4. Load Current vs. Frequ ency
20
Common Emitter
℃
= 125
T
C
16
[V]
CE
12
8
4
Collector - Emitter Voltage, V
0
048121620
IC = 5A
Gate - Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. VGE
GE
10A
20A
SGW10N60RUFD Rev. A1
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