Fairchild Semiconductor SGW10N60RUF Datasheet
©2002 Fairchild Semiconductor Corporation SGW10N60RUF Rev. A1
IGBT
SGW10N60RUF
G
E
C
D2-PAK
SGW10N60RUF
Short Circuit Rated IGBT
General Description
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inv erters
where short circuit ruggedness is a required feature.
Features
• Short circuit rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : V
CE(sat)
= 2.2 V @ IC = 10A
• High input impedance
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
Symbol Description SGW10N60RUF Units
V
CES
Collector-Emitter Voltage 600 V
V
GES
Gate-Emitter Voltage ± 20 V
I
C
Collector Current @ TC = 25°C16 A
Collector Current @ T
C
= 100°C10 A
I
CM (1)
Pulsed Collector Current 30 A
T
SC
Short Circuit Withstand Time @ TC = 100°C10 us
P
D
Maximum Power Dissipation @ TC = 25°C75 W
Maximum Power Dissipation @ T
C
= 100°C30 W
T
J
Operating Junction Temperature -55 to +150 °C
T
stg
Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Tem p. for Soldering
Purposes, 1/8” from Case for 5 Seconds
300 °C
Symbol Parameter Typ. Max. Units
R
θJC
Thermal Resistance, Junction-to-Case -- 1.6 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
-- 40 °C/W
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
G
C
E
G
C
E
SGW10N60RUF Rev. A1
SGW10N60RUF
©2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT T
C
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
∆B
VCES
/
∆T
J
T emperature Coefficient of Breakdown
Voltage
V
GE
= 0V, IC = 1mA -- 0.6 -- V/°C
I
CES
Collector Cut-Off Current VCE = V
CES
, VGE = 0V -- -- 250 uA
I
GES
G-E Leakage Current VGE = V
GES
, VCE = 0V -- -- ± 100 nA
On Characteristics
V
GE(th)
G-E Threshold Voltage IC = 10mA, VCE = V
GE
5.0 6.0 8.5 V
V
CE(sat)
Collector to Emitter
Saturation Voltage
I
C
= 10A
,
VGE = 15V
-- 2.2 2.8 V
I
C
= 16A
,
VGE = 15V
-- 2.5 -- V
Dynamic Characteristics
C
ies
Input Capacitance
V
CE
= 30V, VGE = 0V,
f = 1MHz
-- 660 -- pF
C
oes
Output Capacitance -- 115 -- pF
C
res
Reverse Transfer Capacitance -- 25 -- pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, IC = 10A,
R
G
= 20Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
-- 15 -- ns
t
r
Rise Time -- 30 -- ns
t
d(off)
Turn-Off Delay Time -- 36 50 ns
t
f
Fall Time -- 158 200 ns
E
on
Turn-On Switching Loss -- 141 -- uJ
E
off
Turn-Off Switching Loss -- 215 -- uJ
E
ts
Total Switching Loss -- 356 500 uJ
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, IC = 10A,
R
G
= 20Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
-- 16 -- ns
t
r
Rise Time -- 33 -- ns
t
d(off)
Turn-Off Delay Time -- 42 60 ns
t
f
Fall Time -- 242 350 ns
E
on
Turn-On Switching Loss -- 161 -- uJ
E
off
Turn-Off Switching Loss -- 452 -- uJ
E
ts
Total Switching Loss -- 613 860 uJ
T
sc
Short Circuit Withstand Time
VCC = 300 V, V
GE
= 15V
@
TC = 100°C
10 -- -- us
Q
g
Total Gate Charge
V
CE
= 300 V, IC = 10A,
V
GE
= 15V
-- 30 45 nC
Q
ge
Gate-Emitter Charge -- 5 10 nC
Q
gc
Gate-Collector Charge -- 8 16 nC
L
e
Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH
SGW10N60RUF Rev. A1
SGW10N60RUF
©2002 Fairchild Semiconductor Corporation
Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics
Fig 3. Saturation Voltage vs. Case
Temp erature at Variant Current Level
Fig 4. Load Current vs. Frequ enc y
Fig 5. Satur ation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. VGE
110
0
5
10
15
20
25
30
Common Emitter
V
GE
= 15V
T
C
= 25℃
━━
T
C
= 125℃ ------
Collector Current, I
C
[A]
Collector - Emitter Voltage, VCE [V]
048121620
0
4
8
12
16
20
Common Emitter
T
C
= 125
℃
20A
10A
IC = 5A
Collector - Emitter Voltage, V
CE
[V]
Gate - Emitter Voltage, VGE [V]
0
2
4
6
8
10
12
14
16
0.1 1 10 100 1000
Duty cycle : 50%
T
C
= 100
℃
Power Dissipation = 18 W
VCC = 300V
Load Current : peak of s qu a re w ave
Frequency [KHz]
Load Current [A]
02468
0
5
10
15
20
25
30
35
40
20V
12V
15V
VGE = 10V
Common Emitter
TC = 25
℃
Collector Cu rrent, I
C
[A]
Collector - Emitter Voltage, VCE [V]
-50 0 50 100 150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
20A
10A
IC = 5A
Common Emitter
V
GE
= 15V
Collector - Emitter Voltage, V
CE
[V]
Case Temperature, TC [℃]
048121620
0
4
8
12
16
20
Common Emitter
T
C
= 25
℃
20A
10A
IC = 5A
Collector - Emitter Voltage, V
CE
[V]
Gate - Emitter Voltage, VGE [V]
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