Fairchild Semiconductor SGU15N40L, SGR15N40L Datasheet
SGR15N40L / SGU15N40L
SGR15N40L / SGU15N40L
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench
gate structure provide superior conduction and switching
performance in comparison with transistors having a planar
gate structure. They also have wide noise immunity. These
devices are very suitable for strobe applications
Application
Strobe flash.
C
D-PAK
E
G
GEC
I-PAK
Features
• High input impedance
• High peak current capability (130A)
• Easy gate drive
C
C
G
G
E
E
IGBT
Absolute Maximum Ratings T
Symbol Description SGR / SGU15N40L Units
V
CES
V
GES
I
CM (1)
P
C
T
Operating Junction Temperature -40 to +150 °C
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Collector - Emitter Voltage 400 V
Gate - Emitter Voltage ± 6V
Pulsed Collector Current 130 A
M a x i m u m P o w e r D i s s i p a t i o n @ TC = 25°C45 W
Storage Temperature Range -40 to +150 °C
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
= 25°C unless otherwise noted
C
300 °C
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
θJC
R
(D-PAK) Thermal Resistance, Junction-to-Ambient (PCB Mount)
θJA
(I-PAK) Thermal Resistance, Junction-to-Ambient -- 110 °C/W
R
θJA
Notes :
(2) Mounted on 1” square PCB (FR4 or G-10 Material)
Thermal Resistance, Junction-to-Case -- 3.0 °C/W
(2)
-- 50 °C/W
©2002 Fairchild Semiconductor Corporation SGR15N40L / SGU15N40L Rev. A1
SGR15N40L / SGU15N40L
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
I
CES
I
GES
CES
Collector - Emitter Breakdown Voltage VGE = 0V, IC = 1mA 450 -- -- V
Collector Cut-Off Current VCE = V
G - E Leakage Voltage VGE = V
, VGE = 0V -- -- 10 uA
CES
, VCE = 0V -- -- ± 0.1 uA
GES
On Characteristics
V
GE(th)
V
CE(sat)
G - E Threshold Voltage IC = 1mA, VCE = V
GE
0.5 1.0 1.4 V
C - E Saturation Current IC = 130A, VGE = 4.5V 2.0 4.5 8.0 V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance -- 45 -- pF
Reverse Transfer Capacitance -- 30 -- pF
V
GE
= 0V, V
CE
= 30V,
f = 1MHz
-- 3000 -- pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
* Notes : Recommendation of RG Value : RG≥15Ω
Turn-On Delay Time
Rise Time -- 1.4 -- us
Turn-Off Delay Time -- 0.1 0 .5 us
Fall Time -- 1.1 2.0 us
= 300V, IC = 130A,
V
CC
= 4.5V, RG = 15Ω
V
GE
Resistive Load
-- 0.08 -- us
©2002 Fairchild Semiconductor Corporation
SGR15N40L / SGU15N40L Rev. A1
SGR15N40L / SGU15N40L
180
Commom Emitter
℃
T
= 25
C
150
[A]
120
C
90
60
Collector Current, I
30
0
02468
Collector-Emitter Voltage, V
[V]
CE
V
= 2.5V
GE
5V
4.5V
4V
3.5V
3V
Fig 1. Typical Output Characteristics
10
Common Emitter
℃
= -40
T
C
8
[V]
CE
6
130A
4
2
Collector-Emitter Voltage, V
0
0123456
Gate-Emitter Voltage , VGE [V]
100A
IC = 70A
7
Common Emitter
= 4.5V
V
GE
6
[V]
CE
5
4
3
130A
100A
IC = 70A
Collector-Emitter Voltage, V
2
-50 0 50 100 150
Case Temperature, TC [℃]
Fig 2. Saturation Voltage vs. Case Temperature
at Variant Current Level
10
Common Emitter
℃
= 25
T
C
8
[V]
CE
6
4
2
Collector-Emitter Voltage, V
0
0123456
Gate-Emitter Voltage, VGE [V]
130A
100A
IC = 70A
Fig 3. Saturation Voltage vs. V
10
Common Emitter
℃
= 125
T
C
8
[V]
CE
6
4
2
Collector-Emitter Voltage, V
0
0123456
Gate-Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. V
©2002 Fairchild Semiconductor Corporation
Fig 4. Saturation Voltage vs. VGE
GE
10000
Cies
130A
100A
IC = 70A
1000
Capacitance [pF]
100
10
010203040
Coes
Cres
Collector-Emitter Voltage, VCE [V]
Fig 6. Capacitance Characteristics
GE
Common Emitter
= 0V, f = 1MHz
V
GE
℃
= 25
T
C
SGR15N40L / SGU15N40L Rev. A1
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