Fairchild Semiconductor SGS6N60UFD Datasheet

April 2001

SGS6N60UFD

SGS6N60UFD

Ultra-Fast IGBT

General Description

Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature..

Application

AC & DC Motor controls, general purpose inverters, robotics, servo controls

G C E

TO-220F

Features

• High speed switching

• Low saturation voltage : V

• High input impedance

• CO-PAK, IGBT with FRD : t

CE(sat)

rr

C

G

E

IGBT

= 2.1 V @ IC = 3A

= 35ns (typ.)

Absolute Maximum Ratings T

Symbol Description SGS6N60UFD Units

V

CES

V

GES

I

C

I

CM (1)

I

F

I

FM

P

D

T

Operating Junction Temperature -55 to +150 °C

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C6 A
Collector Current @ T
Pulsed Collector Current 25 A
Diode Continuous Forward Current @ TC = 100°C4 A
Diode Maximum Forward Current 25 A
Maximum Power Dissipation @ TC = 25°C22 W
Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds

= 25°C unless otherwise noted

C

= 100°C3 A

C

= 100°C9 W

C

300 °C

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

(IGBT) Thermal Resistance, Junction-to-Case -- 5.5 °C/W

θJC

R

(DIODE) Thermal Resistance, Junction-to-Case -- 8.0 °C/W

θJC

R

θJA

Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

©2001 Fairchild Semiconductor Corporation

SGS6N60UFD Rev. A

SGS6N60UFD

Electrical Characteristics of IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES

VCES
J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

Temperature Coeff. of Breakdown
Voltage
Collector Cut-off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 µA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 3mA, VCE = V

,

Collector to Emitter
Saturation Voltage

= 3A

I

C

I

= 6A

C

VGE = 15V

,

VGE = 15V

GE

3.5 4.5 6.5 V

-- 2.1 2.6 V

-- 2.6 -- V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 22 -- pF
Reverse Transfer Capacitance -- 7 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 220 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 82 120 µJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 111 170 µJ

E

ts

Q

g

Q

ge

Q

gc

Le Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH

Turn-On Delay Time

-- 15 -- ns
Rise Time -- 25 -- ns
Turn-Off Delay Time -- 60 130 ns
Fall Time -- 70 150 ns
Turn-On Switching Loss -- 57 -- µJ

V

= 300 V, IC = 3A,

CC

R

= 80Ω, V

G

GE

Inductive Load, T

= 15V,

= 25°C

C

Turn-Off Switching Loss -- 25 -- µJ

Turn-On Delay Time

-- 22 -- ns
Rise Time -- 32 -- ns
Turn-Off Delay Time -- 80 200 n s
Fall Time -- 122 300 ns
Turn-On Switching Loss -- 65 -- µJ

= 300 V, IC = 3A,

V

CC

= 80Ω, V

R

G

GE

Inductive Load, T

= 15V,

= 125°C

C

Turn-Off Switching Loss -- 46 -- µJ

Total Gate Charge
Gate-Emitter Charge -- 5 8 nC
Gate-Collector Charge -- 4 6 nC

= 300 V, IC = 3A,

V

CE

V

GE

= 15V

-- 15 22 nC

Electrical Characteristics of DIODE T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

T

= 25°C

C

= 100°C

T

C

TC = 25°C

= 100°C

T

C

T

= 25°C

C

= 100°C

T

C

T

= 25°C

C

= 100°C

T

C

V

FM

t

rr

I

rr

Q

rr

©2001 Fairchild Semiconductor Corporation SGS6N60UFD Rev. A

Diode Forward Voltage IF = 4A

Diode Reverse Recovery Time

I

Diode Peak Reverse Recovery
Current

= 4A,

F

di/dt = 200A/µs

Diode Reverse Recovery Charge

-- 1.4 1.7

-- 1.3 --

-- 35 52

-- 53 --

-- 3.5 5.0

-- 4.5 --

-- 60 135

-- 120 --

V

ns

A

nC

SGS6N60UFD

15

Common Emitter
V

= 15V

GE

= 25℃

T

C

12

T

= 125℃

C

[A]

C

9

6

Collector C urrent, I

3

0

0.5 1 10

Colle c tor - Emitte r V oltage, VCE [V]

[A]

C

30

Comm o n Emitt e r
TC = 25

25

20

15

10

℃

20V

15V

12V

VGE = 10V

Collector Current, I

5

0

02468

Collector - Emit ter Voltag e, VCE [V]

Fig 1. Typical Output Chacracteristics Fig 2. Typical Saturation Voltage

4

Common E mitter
V

= 15V

[V]

GE

CE

3

2

IC = 1.5A

1

Collector - Emitter Voltage, V

0

0306090120150

Case Temperature , TC [℃]

Characteristics

5

6A

3A

4

3

2

Load Current [A]

1

Duty cycle : 50%

℃

= 100

T

C

Power Dissipation = 5W

0

0.1 1 10 100 1000

VCC = 300V
Load Current : peak of square wave

Frequency [KHz]

Fig 3. Saturation Voltage vs. Case

Fig 4. Load Current vs. Frequ ency

Temperature at Variant Current Level

20

16

[V]

CE

12

8

4

Collector - Emit t er Voltage, V

0

048121620

IC = 1.5A

3A

6A

Common Emitter

℃

T

= 25

C

Gate - Emitter Voltage, VGE [V]

Fig 5. Satur ation Voltage vs. V

©2001 Fairchild Semiconductor Corporation SGS6N60UFD Rev. A

Fig 6. Saturation Voltage vs. VGE

GE

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

IC = 1.5A

0 4 8 12 16 20

3A

6A

Common Emitter
T

Gate - Emitter Voltage, VGE [V]

= 125

C

℃