Fairchild Semiconductor SGS23N60UFD Datasheet

April 2001

SGS23N60UFD

SGS23N60UFD

Ultra-Fast IGBT

General Description

Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.

Application

AC & DC Motor controls, general purpose inverters, robotics, servo controls

G C E

TO-220F

Features

• High speed switching

• Low saturation voltage : V

• High input impedance

• CO-PAK, IGBT with FRD : t

CE(sat)

rr

C

G

E

IGBT

= 2.1 V @ IC = 12A

= 42ns (typ.)

Absolute Maximum Ratings T

Symbol Description SGS23N60UFD Units

V

CES

V

GES

I

C

I

CM (1)

I

F

I

FM

P

D

T

Operating Junction Temperature -55 to +150 °C

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C23 A
Collector Current @ T
Pulsed Collector Current 92 A
Diode Continuous Forward Current @ TC = 100°C12 A
Diode Maximum Forward Current 92 A
Maximum Power Dissipation @ TC = 25°C73 W
Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds

= 25°C unless otherwise noted

C

= 100°C12 A

C

= 100°C29 W

C

300 °C

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

(IGBT) Thermal Resistance, Junction-to-Case -- 1.7 °C/W

θJC

R

(DIODE) Thermal Resistance, Junction-to-Case -- 1.2 °C/W

θJC

R

θJA

Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

©2001 Fairchild Semiconductor Corporation

SGS23N60UFD Rev. A

SGS23N60UFD

Electrical Characteristics of IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES

VCES
J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

Temperature Coeff. of Breakdown
Voltage
Collector Cut-off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 uA

CES

, VCE = 0V -- -- ± 100 µA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 12mA, VCE = V

,

Collector to Emitter
Saturation Voltage

I
I

= 12A

C

= 23A

C

VGE = 15V

,

VGE = 15V

GE

3.5 4.5 6.5 V

-- 2.1 2.6 V

-- 2.6 -- V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 100 -- pF
Reverse Transfer Capacitance -- 25 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 720 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 250 400 µJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 525 800 µJ

E

ts

Q

g

Q

ge

Q

gc

Le Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH

Turn-On Delay Time

-- 17 -- ns
Rise Time -- 27 -- ns
Turn-Off Delay Time -- 60 130 ns
Fall Time -- 70 150 ns
Turn-On Switching Loss -- 115 -- µJ

V

= 300 V, IC = 12A,

CC

R

= 23Ω, V

G

GE

Inductive Load, T

= 15V,

= 25°C

C

Turn-Off Switching Loss -- 13 5 -- µJ

Turn-On Delay Time

-- 23 -- ns
Rise Time -- 32 -- ns
Turn-Off Delay Time -- 100 200 ns
Fall Time -- 220 250 ns
Turn-On Switching Loss -- 205 -- µJ

= 300 V, IC = 12A,

V

CC

= 23Ω, V

R

G

GE

Inductive Load, T

= 15V,

= 125°C

C

Turn-Off Switching Loss -- 320 -- µJ

Total Gate Charge
Gate-Emitter Charge -- 11 17 nC
Gate-Collector Charge -- 14 22 nC

= 300 V, IC = 12A,

V

CE

V

GE

= 15V

-- 49 80 nC

Electrical Characteristics of DIODE T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

T

= 25°C

C

= 100°C

T

C

TC = 25°C

= 100°C

T

C

T

= 25°C

C

= 100°C

T

C

T

= 25°C

C

= 100°C

T

C

V

FM

t

rr

I

rr

Q

rr

©2001 Fairchild Semiconductor Corporation SGS23N60UFD Rev. A

Diode Forward Voltage IF = 12A

Diode Reverse Recovery Time

I

Diode Peak Reverse Recovery
Current

= 12A,

F

di/dt = 200A/µs

Diode Reverse Recovery Charge

-- 1.4 1.7

-- 1.3 --

-- 42 60

-- 80 --

-- 3.5 6.0

-- 5.6 --

-- 80 180

-- 220 --

V

ns

A

nC

SGS23N60UFD

100

Common Emitter

℃

TC = 25

80

[A]

C

60

40

Collector Current, I

20

0

02468

20V

15V

12V

VGE = 10V

Collector - Emitter Voltage, VCE [V]

50

Common Emitter
V

= 15V

GE

T

= 25℃

C

40

T

= 125℃

C

[A]

C

30

20

Collector Current, I

10

0

0.5 1 10

Collector - Emitter Voltage, VCE [V]

Fig 1. Typical Output Chacracteristics Fig 2. Typical Saturation Voltage

[V]

CE

4

Common Emitter
V

= 15V

GE

3

2

24A

12A

Characteristics

18

15

12

9

VCC = 300V
Load Current : peak of square w ave

IC = 6A

1

Collector - Emitter Voltage, V

0

0306090120150

Case Temperature, TC [℃]

Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

048121620

IC = 6A

12A

24A

Gate - Emitter Voltage, VGE [V]

Common Emitter

℃

T

= 25

C

Load Current [A]

6

3

Duty cycle : 50%

℃

T

= 100

C

Power Dissipation = 16W

0

0.1 1 10 100 1000

Frequency [KHz]

Fig 4. Load Current vs. Frequ ency

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

IC = 6A

0 4 8 12 16 20

12A

Gate - Emitter Voltage, VGE [V]

24A

Common E mitter
T

= 125

C

℃

Fig 5. Satur ation Voltage vs. V

©2001 Fairchild Semiconductor Corporation SGS23N60UFD Rev. A

Fig 6. Saturation Voltage vs. VGE

GE