Fairchild Semiconductor SGS23N60UF Datasheet
April 2001
SGS23N60UF
SGS23N60UF
Ultra-Fast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Application
AC & DC Motor controls, general purpose inverters, robotics, servo controls
G C E
TO-220F
Features
• High speed switching
• Low saturation voltage : V
• High input impedance
CE(sat)
C
C
G
G
E
E
IGBT
= 2.1 V @ IC = 12A
Absolute Maximum Ratings T
Symbol Description SGS23N60UF Units
V
CES
V
GES
I
C
I
CM (1)
P
D
T
Operating Junction Temperature -55 to +150 °C
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C23 A
Collector Current @ T
Pulsed Collector Current 92 A
Maximum Power Dissipation @ TC = 25°C73 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
= 25°C unless otherwise noted
C
= 100°C12 A
C
= 100°C29 W
C
300 °C
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case -- 1.7 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
©2001 Fairchild Semiconductor Corporation
SGS23N60UF Rev. A
SGS23N60UF
Electrical Characteristics of IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆B
∆T
I
CES
I
GES
CES
VCES
J
Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
/
Temperature Coeff. of Breakdown
Voltage
Collector Cut-off Current VCE = V
G-E Leakage Current VGE = V
V
= 0V, IC = 1mA -- 0.6 -- V/°C
GE
, VGE = 0V -- -- 250 µA
CES
, VCE = 0V -- -- ± 100 nA
GES
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage IC = 12mA, VCE = V
,
Collector to Emitter
Saturation Voltage
I
I
= 12A
C
= 23A
C
VGE = 15V
,
VGE = 15V
GE
3.5 4.5 6.5 V
-- 2.1 2.6 V
-- 2.6 -- V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance -- 100 -- pF
Reverse Transfer Capacitance -- 25 -- pF
= 30V, VGE = 0V,
V
CE
f = 1MHz
-- 720 -- pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
Total Switching Loss -- 250 400 µJ
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss -- 525 800 µJ
E
ts
Q
g
Q
ge
Q
gc
Le Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH
Turn-On Delay Time
-- 17 -- ns
Rise Time -- 27 -- ns
Turn-Off Delay Time -- 60 130 ns
Fall Time -- 70 150 ns
Turn-On Switching Loss -- 115 -- µJ
V
= 300 V, IC = 12A,
CC
R
= 23Ω, V
G
GE
Inductive Load, T
= 15V,
= 25°C
C
Turn-Off Switching Loss -- 135 -- µJ
Turn-On Delay Time
-- 23 -- ns
Rise Time -- 32 -- ns
Turn-Off Delay Time -- 100 200 ns
Fall Time -- 220 250 ns
Turn-On Switching Loss -- 205 -- µJ
= 300 V, IC = 12A,
V
CC
= 23Ω, V
R
G
GE
Inductive Load, T
= 15V,
= 125°C
C
Turn-Off Switching Loss -- 320 -- µJ
Total Gate Charge
Gate-Emitter Charge -- 11 17 nC
Gate-Collector Charge -- 14 22 nC
= 300 V, IC = 12A,
V
CE
V
GE
= 15V
-- 49 80 nC
©2001 Fairchild Semiconductor Corporation SGS23N60UF Rev. A
SGS23N60UF
100
Common Emitter
℃
TC = 25
80
[A]
C
60
40
Collector Current, I
20
0
02468
20V
15V
12V
VGE = 10V
Collector - Emitter Voltage, VCE [V]
50
Common Emitter
V
= 15V
GE
T
= 25℃
C
40
T
= 125℃
C
[A]
C
30
20
Collector Current, I
10
0
0.5 1 10
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Chacracteristics Fig 2. Typical Saturation Voltage
[V]
CE
4
Common Emitter
V
= 15V
GE
3
2
24A
12A
Characteristics
18
15
12
9
VCC = 300V
Load Current : peak of square w a ve
IC = 6A
1
Collector - Emitter Voltage, V
0
0306090120150
Case Temperature, TC [℃]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
16
[V]
CE
12
8
4
Collector - Emitter Voltage, V
0
048121620
IC = 6A
12A
24A
Gate - Emitter Voltage, VGE [V]
Common Emitter
℃
T
= 25
C
Load Current [A]
6
3
Duty cycle : 50%
℃
T
= 100
C
Power Dissipation = 16W
0
0.1 1 10 100 1000
Frequency [KHz]
Fig 4. Load Current vs. Frequ ency
20
16
[V]
CE
12
8
4
Collector - Emitter Voltage, V
0
IC = 6A
0 4 8 12 16 20
12A
Gate - Emitter Voltage, VGE [V]
24A
Common E mitter
T
= 125
C
℃
Fig 5. Satur ation Voltage vs. V
©2001 Fairchild Semiconductor Corporation SGS23N60UF Rev. A
Fig 6. Saturation Voltage vs. VGE
GE
Loading...