Fairchild Semiconductor SGS13N60UF Datasheet

April 2001

SGS13N60UF

SGS13N60UF

Ultra-Fast IGBT

General Description

Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.

Application

AC & DC Motor controls, general purpose inverters, robotics, servo controls

G C E

TO-220F

Features

• High speed switching

• Low saturation voltage : V

• High input impedance

CE(sat)

C

C

G

G

E

E

IGBT

= 2.1 V @ IC = 6.5A

Absolute Maximum Ratings T

Symbol Description SGS13N60UF Units

V

CES

V

GES

I

C

I

CM (1)

P

D

T

Operating Junction Temperature -55 to +150 °C

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C13 A
Collector Current @ T
Pulsed Collector Current 52 A
Maximum Power Dissipation @ TC = 25°C45 W
Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for soldering

purposes, 1/8” from case for 5 seconds

= 25°C unless otherwise noted

C

= 100°C6.5 A

C

= 100°C18 W

C

300 °C

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

θJC

R

θJA

Thermal Resistance, Junction-to-Case -- 2.7 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

©2001 Fairchild Semiconductor Corporation

SGS13N60UF Rev. A

SGS13N60UF

Electrical Characteristics of IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES

VCES
J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

Temperature Coeff. of Breakdown
Voltage
Collector Cut-off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 µA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 6.5mA, VCE = V

,

Collector to Emitter
Saturation Voltage

I

C

I

C

= 6.5A
= 13A

VGE = 15V

,

VGE = 15V

GE

3.5 4.5 6.5 V

-- 2.1 2.6 V

-- 2.6 -- V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 63 -- pF
Reverse Transfer Capacitance -- 13 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 375 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 180 270 µJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 345 500 µJ

E

ts

Q

g

Q

ge

Q

gc

Le Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH

Turn-On Delay Time

-- 20 -- ns
Rise Time -- 27 -- ns
Turn-Off Delay Time -- 70 130 ns
Fall Time -- 97 150 ns
Turn-On Switching Loss -- 85 -- µJ

V

= 300 V, IC = 6.5A,

CC

R

= 50Ω, V

G

GE

Inductive Load, T

= 15V,

= 25°C

C

Turn-Off Switching Loss -- 95 -- µJ

Turn-On Delay Time

-- 30 -- ns
Rise Time -- 32 -- ns
Turn-Off Delay Time -- 85 200 ns
Fall Time -- 168 250 ns
Turn-On Switching Loss -- 180 -- µJ

= 300 V, IC = 6.5A,

V

CC

= 50Ω, V

R

G

GE

Inductive Load, T

= 15V,

= 125°C

C

Turn-Off Switching Loss -- 165 -- µJ

Total Gate Charge
Gate-Emitter Charge -- 7 12 nC
Gate-Collector Charge -- 8 14 nC

= 300 V, IC = 6.5A,

V

CE

V

GE

= 15V

-- 25 35 nC

©2001 Fairchild Semiconductor Corporation SGS13N60UF Rev. A

SGS13N60UF

60

Common Emitter

℃

TC = 25

50

[A]

40

C

30

20

Collector Cu r r ent, I

10

0

02468

20V

15V

12V

VGE = 10V

Collector - Emitter Voltage, VCE [V]

30

Common Emitter
V

= 15V

GE

= 25℃

T

C

25

T

= 125℃

C

[A]

C

20

15

10

Collector Current, I

5

0

0.5 1 10

Collector - Emitter Voltage, VCE [V]

Fig 1. Typical Output Chacracteristics Fig 2. Typical Saturation Voltage

4

Common Emitter
V

= 15V

[V]

GE

CE

3

2

IC = 3A

1

Collector - Em itter Voltage, V

0

0 306090120150

Case Temperature, TC [℃]

13A

6.5A

Characteristics

10

8

6

4

Load Current [A]

2

Duty cycle : 50%

℃

= 100

T

C

Power Dissipat ion = 10W

0

0.1 1 10 100 1000

VCC = 300V
Load Current : peak of square wave

Frequency [KHz]

Fig 3. Saturation Voltage vs. Case

Fig 4. Load Current vs. Frequ ency

Temperature at Variant Current Level

20

16

[V]

CE

12

8

4

Collector - Emit t er Voltage, V

0

048121620

IC = 3A

6.5A

13A

Common Emitter

℃

T

= 25

C

Gate - Emitter Voltage, VGE [V]

Fig 5. Satur ation Voltage vs. V

©2001 Fairchild Semiconductor Corporation SGS13N60UF Rev. A

Fig 6. Saturation Voltage vs. VGE

GE

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

0 4 8 12 16 20

6.5A

IC = 3A

13A

Common Emitter
T

Gate - Emitter Voltage, VGE [V]

= 125

C

℃