Fairchild Semiconductor SGS10N60RUFD Datasheet
April 2001
SGS10N60RUFD
SGS10N60RUFD
Short Circuit Rated IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provide low conduct ion and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and ge neral inverters
where short circuit ruggedness is a required feature.
Application
AC & DC Motor controls, general purpose inverters, robotics, servo controls
G C E
TO-220F
Features
• Short circuit rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : V
• High input impedance
• CO-PAK, IGBT with FRD : t
CE(sat)
rr
C
G
E
IGBT
= 2.2 V @ IC = 10A
= 42ns (typ.)
Absolute Maximum Ratings T
Symbol Description SGS10N60RUFD Units
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
T
SC
P
D
T
Operating Junction Temperature -55 to +150 °C
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C16 A
Collector Current @ T
Pulsed Collector Current 30 A
Diode Continuous Forward Current @ TC = 100°C12 A
Diode Maximum Forward Current 92 A
Short Circuit Withstand Time @ TC = 100°C10 µs
Maximum Power Dissipation @ TC = 25°C55 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
= 25°C unless otherwise noted
C
= 100°C10 A
C
= 100°C22 W
C
300 °C
Thermal Characteristics
Symbol Parameter Typ. Max. Units
(IGBT) Thermal Resistance, Junction-to- Case -- 2.3 °C/W
R
θJC
R
(DIODE) Thermal Resistance, Junction-to-Case -- 3.7 °C/W
θJC
R
θJA
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
©2001 Fairchild Semiconductor Corporation
SGS10N60RUFD Rev. A
SGS10N60RUFD
Electrical Characteristics of IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆B
∆T
I
CES
I
GES
CES
VCES
J
Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
/
Temperature Coeff. of Breakdown
Voltage
Collector Cut-off Current VCE = V
G-E Leakage Current VGE = V
V
= 0V, IC = 1mA -- 0.6 -- V/°C
GE
, VGE = 0V -- -- 250 µA
CES
, VCE = 0V -- -- ± 100 nA
GES
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage IC = 10mA, VCE = V
,
Collector to Emitter
Saturation Voltage
I
I
= 10A
C
= 16A
C
VGE = 15V
,
VGE = 15V
GE
5.0 6.0 8.5 V
-- 2.2 2.8 V
-- 2.5 -- V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance -- 115 -- pF
Reverse Transfer Capacitance -- 25 -- pF
= 30V, VGE = 0V,
V
CE
f = 1MHz
-- 660 -- pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
Total Switching Loss -- 356 500 µJ
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss -- 613 860 µJ
E
ts
T
sc
Q
g
Q
ge
Q
gc
Le Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH
Turn-On Delay Time
-- 15 -- ns
Rise Time -- 30 -- ns
Turn-Off Delay Time -- 36 50 nS
Fall Time -- 158 200 ns
Turn-On Switching Loss -- 141 -- µJ
V
= 300 V, IC = 10A,
CC
R
= 20Ω, V
G
GE
Inductive Load, T
= 15V,
= 25°C
C
Turn-Off Switching Loss -- 215 -- µJ
Turn-On Delay Time
-- 16 -- ns
Rise Time -- 33 -- ns
Turn-Off Delay Time -- 42 60 ns
Fall Time -- 242 350 ns
Turn-On Switching Loss -- 161 -- µJ
= 300 V, IC = 10A,
V
CC
= 20Ω, V
R
G
GE
Inductive Load, T
= 15V,
= 125°C
C
Turn-Off Switching Loss -- 452 -- µJ
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge -- 5 10 nC
Gate-Collector Charge -- 8 16 nC
VCC = 300 V, V
@
TC = 100°C
= 300 V, IC = 10A,
V
CE
V
= 15V
GE
= 15V
GE
10 -- -- µs
-- 30 45 nC
Electrical Characteristics of DIODE T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
T
= 25°C
C
= 100°C
T
C
TC = 25°C
= 100°C
T
C
= 25°C
T
C
T
= 100°C
C
T
= 25°C
C
= 100°C
T
C
V
FM
t
rr
I
rr
Q
rr
©2001 Fairchild Semiconductor Corporation SGS10N60RUFD Rev. A
Diode Forward Voltage IF = 12A
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
= 12A,
I
F
di/dt = 200A/µs
Diode Reverse Recovery Charge
-- 1.4 1.7
-- 1.3 --
-- 42 60
-- 60 --
-- 3.5 6.0
-- 5.6 --
-- 80 180
-- 220 --
V
ns
A
nC
SGS10N60RUFD
[A]
C
Collector Current, I
30
Common Emitter
V
GE
25
T
C
T
C
20
15
10
5
0
= 15V
━━
= 25℃
= 125℃ ------
110
Collector - Emitter Voltage, VCE [V]
40
Common Emitter
℃
TC = 25
35
30
[A]
C
25
20
15
Collector Current, I
10
5
0
02468
20V
15V
12V
VGE = 10V
Collector - Emitter Volta ge , VCE [V]
Fig 1. Typical Output Chacracteristics Fig 2. Typical Saturation Voltage
4.0
Common E mitter
V
= 15V
GE
3.5
[V]
CE
3.0
2.5
2.0
1.5
Collector - Emit ter Voltage, V
1.0
-50 0 50 100 150
Case Temper a ture, TC [℃]
20A
10A
IC = 5A
Characteristics
16
14
12
10
8
6
Load Current [A]
4
Duty cycle : 50%
2
0
℃
T
= 100
C
Power Dissipation = 15W
0.1 1 10 100 1000
VCC = 300V
Load Current : peak of square wave
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Fig 4. Load Current vs. Frequ ency
Temperature at Variant Current Level
20
Comm o n Emitt er
℃
T
= 25
C
16
[V]
CE
12
8
4
Collector - Em i tter Voltag e , V
0
0 4 8 121620
IC = 5A
10A
20A
Gate - E mitter Vol tage, VGE [V]
Fig 5. Satur ation Voltage vs. V
©2001 Fairchild Semiconductor Corporation SGS10N60RUFD Rev. A
Fig 6. Saturation Voltage vs. VGE
GE
20
Common Emitter
℃
= 125
T
C
16
[V]
CE
12
8
4
Collector - Emitter Voltage, V
0
048121620
IC = 5A
10A
20A
Gate - Emitter Voltage, VGE [V]
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