Fairchild Semiconductor SGR6N60UF Datasheet

SGR6N60UF

SGR6N60UF

Ultra-Fast IGBT

General Description

Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

C

D-PAK

E

G

Features

• High speed switching

• Low saturation voltage : V

• High input impedance

G

G

= 2.1 V @ IC = 3A

CE(sat)

C

C

E

E

IGBT

Absolute Maximum Ratings T

Symbol Description SGR6N60UF Units

V

CES

V

GES

I

C

I

CM (1)

P

D

T

Operating Junction Temperature -55 to +150 °C

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C6 A
Collector Current @ T
Pulsed Collector Current 25 A
Maximum Power Dissipation @ TC = 25°C30 W
Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

= 25°C unless otherwise noted

C

= 100°C3 A

C

= 100°C12 W

C

300 °C

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

θJC

R

θJA

Notes :

(2) Mounted on 1” squre PCB (FR4 or G-10 Material)

Thermal Resistance, Junction-to-Case -- 4.0 °C/W
Thermal Resistance, Junction-to-Ambient (PCB Mount)

(2)

-- 50 °C/W

©2002 Fairchild Semiconductor Corporation SGR6N60UF Rev. A1

SGR6N60UF

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES

VCES
J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

T emperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 uA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 3mA, VCE = V

,

= 3A
= 6A

VGE = 15V

,

VGE = 15V

Collector to Emitter
Saturation Voltage

I

C

I

C

GE

3.5 4.5 6.5 V

-- 2.1 2.6 V

-- 2.6 -- V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 22 -- pF
Reverse Transfer Capacitance -- 7 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 220 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 82 120 uJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 111 170 uJ

E

ts

Q

g

Q

ge

Q

gc

L

e

Turn-On Delay Time

-- 15 -- ns
Rise Time -- 25 -- ns
Turn-Off Delay Time -- 60 130 ns
Fall Time -- 70 150 ns
Turn-On Switching Loss -- 57 -- uJ

V

= 300 V, IC = 3A,

CC

R

= 80Ω, V

G

GE

Inductive Load, T

= 15V,

= 25°C

C

Turn-Off Switching Loss -- 25 -- uJ

Turn-On Delay Time

-- 22 -- ns
Rise Time -- 32 -- ns
Turn-Off Delay Time -- 80 200 ns
Fall Time -- 122 300 ns
Turn-On Switching Loss -- 65 -- uJ

= 300 V, IC = 3A,

V

CC

= 80Ω, V

R

G

GE

Inductive Load, T

= 15V,

= 125°C

C

Turn-Off Switchi n g Loss -- 46 -- uJ

Total Gate Charge
Gate-Emitter Charge -- 5 8 nC
Gate-Collector Charge -- 4 6 nC

= 300 V, IC = 3A,

V

CE

V

GE

= 15V

-- 15 22 nC

Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH

©2002 Fairchild Semiconductor Corporation

SGR6N60UF Rev. A1

SGR6N60UF

15

Common Emitter
V

= 15V

GE

= 25℃

T

C

12

T

= 125℃

C

[A]

C

9

6

Collector C urrent, I

3

0

0.5 1 10

Colle c tor - Emitter Volta g e , VCE [V]

[A]

C

30

Comm o n Emitt er
TC = 25

25

20

15

10

℃

20V

15V

12V

VGE = 10V

Collector Current, I

5

0

02468

Collector - Em itter Volta g e, VCE [V]

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage

[V]

CE

4

Common E mitter
V

= 15V

GE

3

2

Characteristics

8

6A

3A

6

4

VCC = 300V
Load Current : peak of s qu are w ave

IC = 1.5A

1

Collector - Emitter Voltage, V

0

0306090120150

Case Temperature , TC [℃]

Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level

20

16

[V]

CE

12

8

4

Collector - Emit t er Voltage, V

0

048121620

IC = 1.5A

3A

Gate - Emitter Voltage, VGE [V]

6A

Common Emitter

℃

T

= 25

C

Load Current [A]

2

Duty cycle : 50%

℃

= 100

T

C

Power Dissipation = 9W

0

0.1 1 10 100 1000

Frequency [KHz]

Fig 4. Load Current vs. Frequ ency

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

IC = 1.5A

0 4 8 12 16 20

3A

Gate - Emitter Voltage, VGE [V]

6A

Common Emitter
T

= 125

C

℃

Fig 5. Satur ation Voltage vs. V

©2002 Fairchild Semiconductor Corporation

Fig 6. Saturation Voltage vs. VGE

GE

SGR6N60UF Rev. A1