Fairchild Semiconductor SGR2N60UFD Datasheet

SGR2N60UFD

IGBT

SGR2N60UFD

Ultra-Fast IGBT

General Description

Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

C

D-PAK

E

G

Absolute Maximum Ratings T

Symbol Description SGR2N60UFD Units

V

CES

V

GES

I

C

I

CM (1)

I

F

I

FM

P

D

T

Operating Junction Temperature -55 to +150 °C

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C2.4 A
Collector Current @ T
Pulsed Collector Current 10 A
Diode Continuous Forward Current @ TC = 100°C1.5 A
Diode Maximum Forward Current 12 A
Maximum Power Dissipation @ TC = 25°C25 W
Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds

= 25°C unless otherwise noted

C

Features

• High speed switching

• Low saturation voltage : V

• High input impedance

• CO-PAK, IGBT with FRD : t

G

G

= 100°C1.2 A

C

= 100°C10 W

C

= 2.1 V @ IC = 1.2A

CE(sat)

= 45ns (typ.)

rr

C

C

E

E

300 °C

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

(IGBT) Thermal Resistance, Junction-to-Case -- 5.0 °C/W

θJC

R

(DIODE) Thermal Resistance, Junction-to-Case -- 5.0 °C/W

θJC

R

θJA

Notes :

(2) Mounted on 1” squre PCB (FR4 or G-10 Material)

©2002 Fairchild Semiconductor Corporation SGR2N60UFD Rev. A1

Thermal Resistance, Junction-to-Ambient (PCB Mount)

(2)

-- 50 °C/W

SGR2N60UFD

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES
VCES

J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

T emperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 uA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 1.2mA, VCE = V

,

Collector to Emitter
Saturation Voltage

I

C

I

C

= 1.2A
= 2.4A

VGE = 15V

,

VGE = 15V

GE

3.5 4.5 6.5 V

-- 2.1 2.6 V

-- 2.6 -- V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 18 -- pF
Reverse Transfer Capacitance -- 4 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 98 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 43 70 uJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 63 100 uJ

E

ts

Q

g

Q

ge

Q

gc

L

e

Turn-On Delay Time

-- 15 -- ns
Rise Time -- 20 -- ns
Turn-Off Delay Time -- 80 130 ns
Fall Time -- 95 160 ns
Turn-On Switching Loss -- 30 -- uJ

V

= 300 V, IC = 1.2A,

CC

R

= 200Ω, V

G

GE

Inductive Load, T

= 15V,

= 25°C

C

Turn-Off Switching Loss -- 13 -- uJ

Turn-On Delay Time

-- 19 -- ns
Rise Time -- 24 -- ns
Turn-Off Delay Time -- 115 200 ns
Fall Time -- 176 250 ns
Turn-On Switching Loss -- 36 -- uJ

= 300 V, IC = 1.2A,

V

CC

= 200Ω, V

R

G

GE

Inductive Load, T

= 15V,

= 125°C

C

Turn-Off Switchi ng Lo s s - - 27 -- uJ

Total Gate Charge
Gate-Emitter Charge -- 3 5 nC
Gate-Collector Charge -- 1.5 3 nC

= 300 V, IC = 1.2A,

V

CE

V

GE

= 15V

-- 9 14 nC

Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH

Electrical Characteristics of DIODE T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

T

V

FM

t

rr

I

rr

Q

rr

©2002 Fairchild Semiconductor Corporation

Diode Forward Voltage IF = 2A

Diode Reverse Recovery Time

Diode Peak Reverse Recovery
Current

Diode Reverse Recovery Charge

I

= 2A,

F

di/dt = 200A/us

= 25°C

C

= 100°C

T

C

TC = 25°C

= 100°C

T

C

T

= 25°C

C

= 100°C

T

C

T

= 25°C

C

= 100°C

T

C

-- 1.4 1.7

-- 1.3 --

-- 45 80

-- 75 --

-- 1.5 3.0

-- 2.5 --

-- 60 135

-- 120 --

V

ns

A

nC

SGR2N60UFD Rev. A1

SGR2N60UFD

12

[A]

C

Common Emitter
TC = 25

10

8

6

4

℃

20V

15V

12V

VGE = 10V

Collector Current, I

2

0

02468

Collector - Emitter Voltage, VCE [V]

Fig 1. Typical Output Characteristics

4

Common Emitter
V

= 15V

[V]

Collector - Em i t t er Voltage, V

GE

CE

3

2

1

0

0306090120150

2.4A

1.2A

IC = 0.6A

Case Temperature, TC [℃]

6

Common Emitter
V

= 15V

GE

= 25℃

T

C

5

T

= 125℃

[A]

Collector Current, I

C

C

4

3

2

1

0

0.5 1 10

Collector - Emitter Voltage, VCE [V]

Fig 2. Typical Saturation Voltage
Characteristics

3.0

2.5

2.0

1.5

Load Current [A]

1.0

0.5

Duty cycle : 50%

℃

T

= 100

C

Power Dissipation = 4W

0.0

0.1 1 10 100 1000

VCC = 300V
Load Current : peak of square wave

Frequency [KHz]

Fig 3. Saturation Voltage vs. Case
Tem perature at Variant Current Level

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

IC = 0.6A

048121620

1.2A

2.4A

Gate - Emitter Voltage, VGE [V]

Fig 5. Satur ation Voltage vs. V

©2002 Fairchild Semiconductor Corporation

Fig 4. Load Current vs. Frequ ency

Common Emitter

℃

T

= 25

C

Fig 6. Saturation Voltage vs. VGE

GE

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

IC = 0.6A

048121620

2.4A

1.2A

Gate - Emitter Voltage, VGE [V]

Common Emitter

℃

T

= 125

C

SGR2N60UFD Rev. A1