Fairchild Semiconductor SGP5N60RUF Datasheet
SGP5N60RUF
SGP5N60RUF
Short Circuit Rated IGBT
General Description
Fairchild's RUF series of Insulated Gate Bipolar Transistors
(IGBTs) provide low conduction and switching losses as
well as short circuit ruggedness. The RUF series is
designed for applications such as motor control,
uninterrupted power supplies (UPS) and ge neral inverters
where short circuit ruggedness is a required feature.
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
G C E
TO-220
Features
• Short circuit rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : V
• High input impedance
G
G
= 2.2 V @ IC = 5A
CE(sat)
C
C
E
E
IGBT
Absolute Maximum Ratings T
Symbol Description SGP5N60RUF Units
V
CES
V
GES
I
C
I
CM (1)
T
SC
P
D
Operating Junction Temperature -55 to +150 °C
T
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C8 A
Collector Current @ T
Pulsed Collector Current 15 A
Short Circuit Withstand Time @ TC = 100°C10 us
Maximum Power Dissipation @ TC = 25°C60 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150 °C
Maximum Lead Tem p. for So ldering
Purposes, 1/8” from Case for 5 Seconds
= 25°C unless otherwise noted
C
= 100°C5 A
C
= 100°C25 W
C
300 °C
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case -- 2.0 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
©2002 Fairchild Semiconductor Corporation SGP5N60RUF Rev. A1
SGP5N60RUF
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆B
∆T
I
CES
I
GES
CES
VCES
J
Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
/
T emperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
V
= 0V, IC = 1mA -- 0.6 -- V/°C
GE
, VGE = 0V -- -- 250 uA
CES
, VCE = 0V -- -- ± 100 nA
GES
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage IC = 5mA, VCE = V
,
= 5A
= 8A
VGE = 15V
,
VGE = 15V
Collector to Emitter
Saturation Voltage
I
C
I
C
GE
5.0 6.0 8.5 V
-- 2.2 2.8 V
-- 2.5 -- V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance -- 67 -- pF
Reverse Transfer Capacitance -- 14 -- pF
= 30V, VGE = 0V,
V
CE
f = 1MHz
-- 354 -- pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
Total Switching Loss -- 195 280 uJ
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss -- 323 -- uJ
E
ts
T
sc
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
-- 13 -- ns
Rise Time -- 24 -- ns
Turn-Off Delay Time -- 34 50 n s
Fall Time -- 136 200 ns
Turn-On Switching Loss -- 88 -- uJ
V
= 300 V, IC = 5A,
CC
R
= 40Ω, V
G
GE
Inductive Load, T
= 15V,
= 25°C
C
Turn-Off Switching Loss -- 10 7 -- uJ
Turn-On Delay Time
-- 13 -- ns
Rise Time -- 26 -- ns
Turn-Off Delay Time -- 40 60 n s
Fall Time -- 250 350 ns
Turn-On Switching Loss -- 103 -- uJ
= 300 V, IC = 5A,
V
CC
= 40Ω, V
R
G
GE
Inductive Load, T
= 15V,
= 125°C
C
Turn-Off Switching Loss -- 22 0 -- uJ
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge -- 3 6 nC
Gate-Collector Charge -- 7 14 nC
VCC = 300 V, V
@
TC = 100°C
= 300 V, IC = 5A,
V
CE
V
= 15V
GE
= 15V
GE
10 -- -- us
-- 16 24 nC
Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH
©2002 Fairchild Semiconductor Corporation
SGP5N60RUF Rev. A1
SGP5N60RUF
25
Common Emitter
℃
TC = 25
20
[A]
C
15
10
Collector Curren t, I
5
0
02468
20V
VGE = 10V
Colle c t or - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
4.0
Common Emitter
V
= 15V
GE
3.5
[V]
CE
3.0
2.5
2.0
1.5
Collec tor - Emitter V oltage, V
1.0
-50 0 50 100 150
Case Temperature, TC [℃]
IC = 3A
10A
5A
15V
12V
20
Common Emitter
V
= 15V
GE
━━
T
= 25℃
16
C
T
= 125℃ ------
[A]
C
C
12
8
Collector Current, I
4
0
110
Collector - Emitter Voltage, VCE [V]
Fig 2. Typical Saturation Voltage Characteristics
10
8
6
4
Load Current [A]
2
Duty cycle : 50%
℃
T
= 100
C
Power Dissipation = 12W
0
0.1 1 10 100 1000
VCC = 300V
Load Current : pe ak of square wave
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
20
Common Emitter
℃
T
= 25
C
16
[V]
CE
12
8
4
Collector - Emitter Voltage, V
0
0 4 8 121620
IC = 3A
10A
5A
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. V
©2002 Fairchild Semiconductor Corporation
GE
Fig 4. Load Current vs. Frequency
20
Common Emitter
℃
T
= 125
C
16
[V]
CE
12
8
4
Collector - Emitte r Vo l tage, V
0
0 4 8 12 16 20
IC = 3A
Gate - Emitter Voltage, VGE [V]
Fig 6. Saturation Voltage vs. V
10A
5A
GE
SGP5N60RUF Rev. A1
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