Fairchild Semiconductor SGP40N60UF Datasheet

SGP40N60UF

SGP40N60UF

Ultra-Fast IGBT

General Description

Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

G C E

TO-220

Features

• High speed switching

• Low saturation voltage : V

• High input impedance

G

G

= 2.1 V @ IC = 20A

CE(sat)

C

C

E

E

IGBT

Absolute Maximum Ratings T

Symbol Description SGP40N60UF Units

V

CES

V

GES

I

C

I

CM (1)

P

D

T

Operating Junction Temperature -55 to +150 °C

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C40 A
Collector Current @ T
Pulsed Collector Current 160 A
Maximum Power Dissipation @ TC = 25°C 160 W
Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

= 25°C unless otherwise noted

C

= 100°C20 A

C

= 100°C64 W

C

300 °C

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

θJC

R

θJA

Thermal Resistance, Junction-to-Case -- 0.77 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

©2002 Fairchild Semiconductor Corporation SGP40N60UF Rev. A1

SGP40N60UF

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

∆B
∆T

I

CES

I

GES

CES

VCES
J

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

T emperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 1mA -- 0.6 -- V/°C

GE

, VGE = 0V -- -- 250 uA

CES

, VCE = 0V -- -- ± 100 nA

GES

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 20mA, VCE = V

,

Collector to Emitter
Saturation Voltage

I
I

= 20A

C

= 40A

C

VGE = 15V

,

VGE = 15V

GE

3.5 4.5 6.5 V

-- 2.1 2.6 V

-- 2.6 -- V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance
Output Capacitance -- 170 -- pF
Reverse Transfer Capacitance -- 50 -- pF

= 30V, VGE = 0V,

V

CE

f = 1MHz

-- 1430 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss -- 360 600 uJ

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 740 1200 uJ

E

ts

Q

g

Q

ge

Q

gc

L

e

Turn-On Delay Time

-- 15 -- ns
Rise Time -- 30 -- ns
Turn-Off Delay Time -- 65 130 ns
Fall Time -- 50 150 ns
Turn-On Switching Loss -- 160 -- uJ

V

= 300 V, IC = 20A,

CC

R

= 10Ω, V

G

GE

Inductive Load, T

= 15V,

= 25°C

C

Turn-Off Switching Loss -- 200 -- uJ

Turn-On Delay Time

-- 30 -- ns
Rise Time -- 37 -- ns
Turn-Off Delay Time -- 110 200 ns
Fall Time -- 144 250 ns
Turn-On Switching Loss -- 310 -- uJ

= 300 V, IC = 20A,

V

CC

= 10Ω, V

R

G

GE

Inductive Load, T

= 15V,

= 125°C

C

Turn-Off Switchi n g Loss -- 430 -- uJ

Total Gate Charge
Gate-Emitter Charge -- 20 30 nC
Gate-Collector Charge -- 25 40 nC

= 300 V, IC = 20A,

V

CE

V

GE

= 15V

-- 97 150 nC

Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH

©2002 Fairchild Semiconductor Corporation

SGP40N60UF Rev. A1

SGP40N60UF

160

Common Emitter

℃

TC = 25

120

[A]

C

80

40

Collector Current, I

0

02468

20V

15V

12V

VGE = 10V

Collector - Emitter Voltage, VCE [V]

80

Common Emitter
V

= 15V

GE

70

T

= 25℃

C

T

= 125℃

C

60

[A]

C

50

40

30

Collector Current, I

20

10

0

0.5 1 10

Collector - Emitter Voltage, VCE [V]

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage

[V]

CE

4

Common Emitter
V

= 15V

GE

3

2

40A

20A

Characteristics

30

25

20

15

VCC = 300V
Load Current : pea k o f s q ua re wave

IC = 10A

1

Collector - Emitter Voltage, V

0

0306090120150

Case Temperature, TC [℃]

Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level

20

16

[V]

CE

12

8

4

Collector - Emit t er Voltage, V

0

048121620

IC = 10A

40A

20A

Gate - Emitter Voltage, VGE [V]

Common Emitter

℃

T

= 25

C

Load Current [A]

10

5

Duty cycle : 50%

℃

T

= 100

C

Power Dissipat ion = 3 2W

0

0.1 1 10 100 1000

Frequency [KHz]

Fig 4. Load Current vs. Frequ ency

20

16

[V]

CE

12

8

4

Collector - Emitter Voltage, V

0

IC = 10A

0 4 8 12 16 20

20A

Gate - Emitter Voltage, VGE [V]

40A

Common Emitter

= 125

T

C

℃

Fig 5. Satur ation Voltage vs. V

©2002 Fairchild Semiconductor Corporation

Fig 6. Saturation Voltage vs. VGE

GE

SGP40N60UF Rev. A1