Fairchild Semiconductor SGP23N60UF Datasheet
©2002 Fairchild Semiconductor Corporation SGP23N60UF Rev. A1
IGBT
SGP23N60UF
SGP23N60UF
Ultra-Fast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : V
CE(sat)
= 2.1 V @ IC = 12A
• High input impedance
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Description SGP23N60UF Units
V
CES
Collector-Emitter Voltage 600 V
V
GES
Gate-Emitter Voltage ± 20 V
I
C
Collector Current @ TC = 25°C23 A
Collector Current @ T
C
= 100°C12 A
I
CM (1)
Pulsed Collector Current 92 A
P
D
Maximum Power Dissipation @ TC = 25°C 100 W
Maximum Power Dissipation @ T
C
= 100°C40 W
T
J
Operating Junction Temperature -55 to +150 °C
T
stg
Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
300 °C
Symbol Parameter Typ. Max. Units
R
θJC
Thermal Resistance, Junction-to-Case -- 1.2 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
TO-220
G C E
G
C
E
G
C
E
SGP23N60UF Rev. A1
SGP23N60UF
©2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT T
C
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
∆B
VCES
/
∆T
J
T emperature Coefficient of Breakdown
Voltage
V
GE
= 0V, IC = 1mA -- 0.6 -- V/°C
I
CES
Collector Cut-Off Current VCE = V
CES
, VGE = 0V -- -- 250 uA
I
GES
G-E Leakage Current VGE = V
GES
, VCE = 0V -- -- ± 100 nA
On Characteristics
V
GE(th)
G-E Threshold Voltage IC = 12mA, VCE = V
GE
3.5 4.5 6.5 V
V
CE(sat)
Collector to Emitter
Saturation Voltage
I
C
= 12A
,
VGE = 15V
-- 2.1 2.6 V
I
C
= 23A
,
VGE = 15V
-- 2.6 -- V
Dynamic Characteristics
C
ies
Input Capacitance
V
CE
= 30V, VGE = 0V,
f = 1MHz
-- 720 -- pF
C
oes
Output Capacitance -- 100 -- pF
C
res
Reverse Transfer Capacitance -- 25 -- pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, IC = 12A,
R
G
= 23Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
-- 17 -- ns
t
r
Rise Time -- 27 -- ns
t
d(off)
Turn-Off Delay Time -- 60 130 ns
t
f
Fall Time -- 70 150 ns
E
on
Turn-On Switching Loss -- 115 -- uJ
E
off
Turn-Off Switching Loss -- 135 -- uJ
E
ts
Total Switching Loss -- 250 400 uJ
t
d(on)
Turn-On Delay Time
V
CC
= 300 V, IC = 12A,
R
G
= 23Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
-- 23 -- ns
t
r
Rise Time -- 32 -- ns
t
d(off)
Turn-Off Delay Time -- 100 200 ns
t
f
Fall Time -- 220 250 ns
E
on
Turn-On Switching Loss -- 205 -- uJ
E
off
Turn-Off Switchi n g Loss -- 320 -- uJ
E
ts
Total Switching Loss -- 525 800 uJ
Q
g
Total Gate Charge
V
CE
= 300 V, IC = 12A,
V
GE
= 15V
-- 49 80 nC
Q
ge
Gate-Emitter Charge -- 11 17 nC
Q
gc
Gate-Collector Charge -- 14 22 nC
L
e
Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH
SGP23N60UF Rev. A1
SGP23N60UF
©2002 Fairchild Semiconductor Corporation
048121620
0
4
8
12
16
20
Common Emitter
T
C
= 25
℃
24A
12A
IC = 6A
Collector - Emitter Voltage, V
CE
[V]
Gate - Emitter Voltage, VGE [V]
0
5
10
15
20
0.1 1 10 100 1000
Duty cycle : 50%
T
C
= 100
℃
Power Dissipation = 21W
VCC = 300V
Load Current : peak of square wave
Frequency [KHz]
Load Current [A]
0.5 1 10
0
10
20
30
40
50
Common Emitter
V
GE
= 15V
T
C
= 25℃
T
C
= 125℃
Collector Current, I
C
[A]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequ enc y
Fig 5. Satur ation Voltag e vs. V
GE
Fig 6. Saturation Voltage vs. VGE
0 4 8 12 16 20
0
4
8
12
16
20
Common E mitter
T
C
= 125
℃
24A
12A
IC = 6A
Collector - Emitter Voltage, V
CE
[V]
Gate - Emitter Voltage, VGE [V]
0306090120150
0
1
2
3
4
24A
12A
IC = 6A
Common Emitter
V
GE
= 15V
Collector - Emitter Voltage, V
CE
[V]
Case Temperature, TC [℃]
02468
0
20
40
60
80
100
20V
12V
15V
VGE = 10V
Common Emitter
TC = 25
℃
Collector Cur r ent, I
C
[A]
Collector - Emitter Voltage, VCE [V]