Fairchild Semiconductor SGP15N60RUF Datasheet

©2000 Fairchild Semiconductor International

September 2000

SGP15N60RUF Rev. A

IGBT

SGP15N60RUF

SGP15N60RUF

Short Circuit Rated IGBT

General Description

Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUF
series provides low conduction and switching losses as well
as short circuit ruggedness. RUF series is designed for the
applications such as motor control, UPS and general
inverters where short-circuit ruggedness is required.

Features

• Short Circuit rated 10us @ TC = 100°C, VGE = 15V

• High Speed Switching

• Low Saturation Voltage : V

CE(sat)

= 2.2 V @ IC = 15A

• High Input Impedance

Absolute Maximum Ratings T

C

= 25°C unless otherwise noted

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol Description SGP15N60RUF Units

V

CES

Collector-Emitter Voltage 600 V

V

GES

Gate-Emitter Voltage ± 20 V

I

C

Collector Current @ TC = 25°C24 A
Collector Current @ T

C

= 100°C15 A

I

CM (1)

Pulsed Collector Current 45 A

T

SC

Short Circuit Withstand Time @ TC = 100°C10 us

P

D

Maximum Power Dissipation @ TC = 25°C 160 W
Maximum Power Dissipation @ T

C

= 100°C64 W

T

J

Operating Junction Temperature -55 to +150 °C

T

stg

Storage Temperature Range -55 to +150 °C

T

L

Maximum Lead Tem p. for Soldering
Purposes, 1/8” from Case for 5 Seconds

300 °C

Symbol Parameter Typ. Max. Units

R

θJC

Thermal Resistance, Junction-to-Case -- 0.77 °C/W

R

θJA

Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Application

AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls

G

C

E

G

C

E

TO-220

G C E

©2000 Fairchild Semiconductor International SGP15N60RUF Rev. A

SGP15N60RUF

Electrical Characteristics of IGBT T

C

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

CES

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

∆B

VCES

/

∆T

J

Temperature Coeff. of Breakdown
Voltage

V

GE

= 0V, IC = 1mA -- 0.6 -- V/°C

I

CES

Collector Cut-Off Current VCE = V

CES

, VGE = 0V -- -- 250 uA

I

GES

G-E Leakage Current VGE = V

GES

, VCE = 0V -- -- ± 100 nA

On Characteristics

V

GE(th)

G-E Threshold Voltage IC = 15mA, VCE = V

GE

5.0 6.0 8.5 V

V

CE(sat)

Collector to Emitter
Saturation Voltage

I

C

= 15A

,

VGE = 15V

-- 2.2 2.8 V

I

C

= 24A

,

VGE = 15V

-- 2.5 -- V

Dynamic Characteristics

C

ies

Input Capacitance

V

CE

= 30V, VGE = 0V,

f = 1MHz

-- 948 -- pF

C

oes

Output Capacitance -- 101 -- pF

C

res

Reverse Transfer Capacitance -- 33 -- pF

Switching Characteristics

t

d(on)

Turn-On Delay Time

V

CC

= 300 V, IC = 15A,

R

G

= 13Ω, V

GE

= 15V,

Inductive Load, T

C

= 25°C

-- 17 -- ns

t

r

Rise Time -- 33 -- ns

t

d(off)

Turn-Off Delay Time -- 44 65 ns

t

f

Fall Time -- 118 200 ns

E

on

Turn-On Switching Loss -- 320 -- uJ

E

off

Turn-Off Switching Loss -- 356 -- uJ

E

ts

Total Switching Loss -- 676 950 uJ

t

d(on)

Turn-On Delay Time

V

CC

= 300 V, IC = 15A,

R

G

= 13Ω, V

GE

= 15V,

Inductive Load, T

C

= 125°C

-- 20 -- ns

t

r

Rise Time -- 34 -- ns

t

d(off)

Turn-Off Delay Time -- 48 70 ns

t

f

Fall Time -- 212 350 ns

E

on

Turn-On Switching Loss -- 340 -- uJ

E

off

Turn-Off Switching Loss -- 695 -- uJ

E

ts

Total Switching Loss -- 1035 1450 uJ

T

sc

Short Circuit Withstand Time

VCC = 300 V, V

GE

= 15V

@

TC = 100°C

10 -- -- us

Q

g

Total Gate Charge

V

CE

= 300 V, IC = 15A,

V

GE

= 15V

-- 42 60 nC

Q

ge

Gate-Emitter Charge -- 7 10 nC

Q

gc

Gate-Collector Charge -- 17 24 nC

L

e

Internal Emitter Inductance Measured 5mm from PKG -- 7.5 -- nH